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A Low-Power 10Mbps Squaring-First UWB Receiver Using Frequency Hopping and Two-Tone Modulation

A Low-Power 10Mbps Squaring-First UWB Receiver Using Frequency Hopping and Two-Tone Modulation 150 150
Author(s): Lexie Drackley, Aman Gupta, David D. Wentzloff

Abstract:

This paper presents a low-power 10Mbps squaring-first ultra-wideband (UWB) receiver using frequency hopping code-division multiple-access (FH-CDMA) and two-tone OOK modulation for wireless personal area networks (WPAN). The two-tone receiver architecture preserves IF filtering, improves resilience to narrowband interference, and saves power by eliminating the RF local oscillator. FH is applied …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3716852
Publisher: IEEE

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A 108-Gb/s PAM-8 CTLE + FFE Receiver Front-End With 1.4-Vppd Input Range in 28-nm CMOS

A 108-Gb/s PAM-8 CTLE + FFE Receiver Front-End With 1.4-Vppd Input Range in 28-nm CMOS 150 150
Author(s): Sangwan Lee, Heedo Jeong, Hanhee Jo, Hwanseok Jung, Jaeduk Han

Abstract:

This article presents a 108-Gb/s 8-level pulse amplitude modulation (PAM-8) receiver front-end capable of handling a wide input dynamic range to overcome the signal-to-noise ratio (SNR) versus linearity tradeoff in higher-order modulation schemes. The proposed architecture employs a multi-path continuous-time linear equalizer (CTLE) with a bias-shifting technique, which splits …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3713392
Publisher: IEEE

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A 112-Gb/s PAM4 Receiver With a Phase Equalization AFE in 7-nm FinFET

A 112-Gb/s PAM4 Receiver With a Phase Equalization AFE in 7-nm FinFET 150 150
Author(s): Huanan Guo, Yufeng Yao, Xiang Gao

Abstract:

To reduce the bit-error-rate (BER), equalizers are implemented in high-speed SerDes receivers (RX) to compensate for channel insertion loss and mitigate intersymbol interference (ISI). Conventional analog front-end (AFE) designs primarily focus on amplitude gain while neglecting the influence of phase shift. This brief presents a phase equalization (PEQ) AFE design …

Published in: IEEE Solid-State Circuits Letters
Page(s): 5 – 8
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3637833
Publisher: IEEE

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A 200 GHz Wideband and Low-Power Direct-Downconversion Receiver Element in 16 nm FinFET Technology

A 200 GHz Wideband and Low-Power Direct-Downconversion Receiver Element in 16 nm FinFET Technology 150 150
Author(s): Ethan Chou, Hesham Beshary, Nima Baniasadi, Ali M. Niknejad

Abstract:

This letter presents a wideband and low-power direct-downconversion 200 GHz receiver element for digital-beamforming applications implemented in 16 nm FinFET technology. Wideband and low integrated receiver noise figure of 9.8 dB across a 21 GHz baseband bandwidth is realized with a differential low-noise amplifier leveraging an active input balun stage, while wideband gain of 29 …

Published in: IEEE Solid-State Circuits Letters
Page(s): 349 – 352
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3626442
Publisher: IEEE

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A 1-8 GHz, 190MHz BB BW Mixer-First Receiver With Bootstrapped Mixer Switches Achieving Over 16dBm In-Band IIP3

A 1-8 GHz, 190MHz BB BW Mixer-First Receiver With Bootstrapped Mixer Switches Achieving Over 16dBm In-Band IIP3 150 150
Author(s): Erwin Hardeveld, Ronan van der Zee, Bram Nauta

Abstract:

In this article, we propose a wideband mixer-first receiver with improved in-band (IB) linearity. It uses bootstrapped N-path mixer switches to achieve a constant on-state gate–source voltage for large IB signals. We analyze the tradeoff between on-state resistance and off-state subthreshold current in conventional mixer switches and introduce a …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3606117
Publisher: IEEE

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