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A 200 GHz Wideband and Low-Power Direct-Downconversion Receiver Element in 16 nm FinFET Technology

A 200 GHz Wideband and Low-Power Direct-Downconversion Receiver Element in 16 nm FinFET Technology 150 150
Author(s): Ethan Chou, Hesham Beshary, Nima Baniasadi, Ali M. Niknejad

Abstract:

This letter presents a wideband and low-power direct-downconversion 200 GHz receiver element for digital-beamforming applications implemented in 16 nm FinFET technology. Wideband and low integrated receiver noise figure of 9.8 dB across a 21 GHz baseband bandwidth is realized with a differential low-noise amplifier leveraging an active input balun stage, while wideband gain of 29 …

Published in: IEEE Solid-State Circuits Letters
Page(s): 349 – 352
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3626442
Publisher: IEEE

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A 1-8 GHz, 190MHz BB BW Mixer-First Receiver With Bootstrapped Mixer Switches Achieving Over 16dBm In-Band IIP3

A 1-8 GHz, 190MHz BB BW Mixer-First Receiver With Bootstrapped Mixer Switches Achieving Over 16dBm In-Band IIP3 150 150
Author(s): Erwin Hardeveld, Ronan van der Zee, Bram Nauta

Abstract:

In this article, we propose a wideband mixer-first receiver with improved in-band (IB) linearity. It uses bootstrapped N-path mixer switches to achieve a constant on-state gate–source voltage for large IB signals. We analyze the tradeoff between on-state resistance and off-state subthreshold current in conventional mixer switches and introduce a …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3606117
Publisher: IEEE

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