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An IEEE802.15.4a/z/ab compatible IR-UWB 2TRX with full-duplex radar sensing and aliasing suppressing semi-synchronous TX

An IEEE802.15.4a/z/ab compatible IR-UWB 2TRX with full-duplex radar sensing and aliasing suppressing semi-synchronous TX 150 150
Author(s): Anoop Narayan Bhat, Erwin Allebes, Elbert Bechthum, Zule Xu, Stan Van Der Ven, Mohieddine El Soussi, Johan Van Den Heuvel, Paul Van Zeijl, Paul Mateman, Murat Eskiyerli, Stefano Traferro, Amirashkan Farsaei, Evgenii Tiurin, Sahan Gamage, Pepijn Boer, Igor Petrov, Jochem Govers, Huib Visser, Martijn Hijdra, Sharada Prasad Shantharam, Ivo Marques, Gururaja Kasanadi Ramachandra, Kaijie Ding, Ran Li, Aasish Boora, Peter Vis, Mario Konijnenburg, Arjan Breeschoten, Peng Zhang, Yao-Hong Liu, Christian Bachmann

Abstract:

This letter presents an 802.15.4ab/a/z compatible IR-UWB 2TRX highlighting a full-duplex-based radar, a semi-synchronous TX and TRX’s digital baseband. A capacitive tuning technique proposed in the electrical balance duplexer (EBD)-based duplex RF front-end (RF-FE) improves TX-antenna insertion loss by 1.4dB and the sensitivity of TX-RX isolation …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3697493
Publisher: IEEE

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A 7.5-μW 35-Keyword End-to-End Keyword Spotting System With Random Augmented On-Chip Training

A 7.5-μW 35-Keyword End-to-End Keyword Spotting System With Random Augmented On-Chip Training 150 150
Author(s): Hyuk-Jin Lee, Kyunghoon Pyo, Taekwang Jang, Mingoo Seok, SeongHwan Cho

Abstract:

Fully integrated keyword spotting (KWS) systems designed for low-power operation face two major challenges. First, increasing the number of supported keywords significantly raises system complexity and power consumption. Second, most existing systems are not personalized to individual users, as they are trained on data from native English speakers, leading to …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 10
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3660634
Publisher: IEEE

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A SPICE-Compatible Compact Model of Ferroelectric Diode

A SPICE-Compatible Compact Model of Ferroelectric Diode 150 150
Author(s): Musaib Rafiq, Mohammad Sajid Nazir, Ateeb Naseer, Yogesh Singh Chauhan, Shubham Sahay

Abstract:

In this work, for the first time, we present a SPICE-compatible compact model of ferroelectric (FE) diodes to enable their design exploration for diverse applications, including memory and unconventional computing paradigms. We propose modified Schottky barrier and hopping models for capturing the on- and off-mode operations of the FE diode, …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 166 – 170
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3624212
Publisher: IEEE

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A Bit-Cell Failure Analysis Framework for Ferroelectric Field-Effect Transistor-Based Memories

A Bit-Cell Failure Analysis Framework for Ferroelectric Field-Effect Transistor-Based Memories 150 150
Author(s): Jianze Wang, Wei Zhang, Xuanyao Fong

Abstract:

The ferroelectric field-effect transistor (FeFET) is a promising memory device technology due to desirable attributes, such as fast access times, high memory cell density, good endurance, compatibility with CMOS process, and impressive scalability. While previous research has explored the impact of process variations at the device level, their effects on …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 123 – 130
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3616007
Publisher: IEEE

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Polar-Axis Orientation Fluctuations and the Impact on the Intrinsic Variability in Ferroelectric Capacitors

Polar-Axis Orientation Fluctuations and the Impact on the Intrinsic Variability in Ferroelectric Capacitors 150 150
Author(s): Wei Zhang, Jianze Wang, Xuanyao Fong

Abstract:

We utilized phase-field simulations to investigate the effects of polar-axis (PA) orientation fluctuations on the extrinsic properties of single ferroelectric (FE) grains, focusing on the coercive electrical field (EC) and the remnant polarization (Pr). The underlying mechanisms through which PA orientation fluctuations influence polarization behavior are studied to gain insights …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 74 – 80
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3586589
Publisher: IEEE

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Cryogenic Hyperdimensional In-Memory Computing Using Ferroelectric TCAM

Cryogenic Hyperdimensional In-Memory Computing Using Ferroelectric TCAM 150 150
Author(s): Shivendra Singh Parihar, Shubham Kumar, Swetaki Chatterjee, Girish Pahwa, Yogesh Singh Chauhan, Hussam Amrouch

Abstract:

Cryogenic operations of electronics present a significant step forward to achieve huge demand of in-memory computing (IMC) for high-performance computing, quantum computing, and military applications. Ferroelectric (FE) is a promising candidate to develop the complementary metal oxide semiconductor (CMOS)-compatible nonvolatile memories. Hence, in this work, we investigate the effectiveness …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 34 – 41
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3547797
Publisher: IEEE

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