Iron

  • No Comments

A SPICE-Compatible Compact Model of Ferroelectric Diode

A SPICE-Compatible Compact Model of Ferroelectric Diode 150 150
Author(s): Musaib Rafiq, Mohammad Sajid Nazir, Ateeb Naseer, Yogesh Singh Chauhan, Shubham Sahay

Abstract:

In this work, for the first time, we present a SPICE-compatible compact model of ferroelectric (FE) diodes to enable their design exploration for diverse applications, including memory and unconventional computing paradigms. We propose modified Schottky barrier and hopping models for capturing the on- and off-mode operations of the FE diode, …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 166 – 170
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3624212
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A Bit-Cell Failure Analysis Framework for Ferroelectric Field-Effect Transistor-Based Memories

A Bit-Cell Failure Analysis Framework for Ferroelectric Field-Effect Transistor-Based Memories 150 150
Author(s): Jianze Wang, Wei Zhang, Xuanyao Fong

Abstract:

The ferroelectric field-effect transistor (FeFET) is a promising memory device technology due to desirable attributes, such as fast access times, high memory cell density, good endurance, compatibility with CMOS process, and impressive scalability. While previous research has explored the impact of process variations at the device level, their effects on …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 123 – 130
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3616007
Publisher: IEEE

View on IEEE Xplore

  • No Comments

Polar-Axis Orientation Fluctuations and the Impact on the Intrinsic Variability in Ferroelectric Capacitors

Polar-Axis Orientation Fluctuations and the Impact on the Intrinsic Variability in Ferroelectric Capacitors 150 150
Author(s): Wei Zhang, Jianze Wang, Xuanyao Fong

Abstract:

We utilized phase-field simulations to investigate the effects of polar-axis (PA) orientation fluctuations on the extrinsic properties of single ferroelectric (FE) grains, focusing on the coercive electrical field (EC) and the remnant polarization (Pr). The underlying mechanisms through which PA orientation fluctuations influence polarization behavior are studied to gain insights …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 74 – 80
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3586589
Publisher: IEEE

View on IEEE Xplore

  • No Comments

Cryogenic Hyperdimensional In-Memory Computing Using Ferroelectric TCAM

Cryogenic Hyperdimensional In-Memory Computing Using Ferroelectric TCAM 150 150
Author(s): Shivendra Singh Parihar, Shubham Kumar, Swetaki Chatterjee, Girish Pahwa, Yogesh Singh Chauhan, Hussam Amrouch

Abstract:

Cryogenic operations of electronics present a significant step forward to achieve huge demand of in-memory computing (IMC) for high-performance computing, quantum computing, and military applications. Ferroelectric (FE) is a promising candidate to develop the complementary metal oxide semiconductor (CMOS)-compatible nonvolatile memories. Hence, in this work, we investigate the effectiveness …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 34 – 41
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3547797
Publisher: IEEE

View on IEEE Xplore

Search this website