Integrated circuits

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A 10-bit Source-Driver IC for High-Resolution OLED-on-Silicon Displays With All-Channel Automatic Offset Calibration and Data-Aware Slew-Rate Enhancement

A 10-bit Source-Driver IC for High-Resolution OLED-on-Silicon Displays With All-Channel Automatic Offset Calibration and Data-Aware Slew-Rate Enhancement 150 150
Author(s): Junghwan Oh, Wiman Yoo, Dong-Kun Lee, Dong-Hyun Kim, Jong-Seok Kim

Abstract:

This article presents a 10-bit source-driver (SD) IC for high-resolution OLED-on-silicon (OLEDoS) microdisplays in augmented reality (AR)/virtual reality (VR) applications. To address the stringent constraints of aggressive area scaling, sub-microsecond settling time, and high output uniformity, three key techniques are proposed. First, a demultiplexer (DEMUX)-based channel width expansion …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3726042
Publisher: IEEE

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Benchmarking of Emerging Material-Based TCAMs

Benchmarking of Emerging Material-Based TCAMs 150 150
Author(s): Ashwin Tunga, Junzhe Kang, Zijing Zhao, Ankit Shukla, Wenjuan Zhu, Shaloo Rakheja

Abstract:

This work presents a comprehensive benchmarking of ternary content-addressable memory (TCAM) implementations using timing-accurate SPICE simulations, systematically comparing conventional CMOS designs with emerging device technologies, including magnetic tunnel junctions (MTJs), ferroelectric tunnel junctions (FTJs), ferroelectric field-effect transistors (FeFETs), and 2-D reconfigurable field-effect transistors (2D RFETs). Key performance metrics, including search …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 104 – 112
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3687143
Publisher: IEEE

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A 0.38-pJ/step Pulse-Width Locked Time-Domain Wheatstone Bridge Sensor Readout IC for LIG-Based Wearable Strain Sensing System

A 0.38-pJ/step Pulse-Width Locked Time-Domain Wheatstone Bridge Sensor Readout IC for LIG-Based Wearable Strain Sensing System 150 150
Author(s): Siyuan Xu, Longhuang Li, Yiyang Du, Huiru Yang, Huaiyu Ye, Huan Hu

Abstract:

This article presents a pulse-width locked-loop (PWLL) time-domain readout integrated circuit (IC) for wearable strain-sensing systems based on a laser-induced graphene (LIG) strain sensor. A time-domain Wheatstone bridge (WhB) architecture is proposed, incorporating a duty-cycled resistor (DCR) and a voltage-controlled oscillator (VCO)-based integrator to realize a digitally intensive, energy-efficient, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3704204
Publisher: IEEE

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A Capacitor-Free Hybrid-Process Low Dropout Regulator With Ultrahigh-Gain Amplifier and Super Source Follower for 0.297 mV/A Load Regulation and 0.024 mV/V Line Regulation

A Capacitor-Free Hybrid-Process Low Dropout Regulator With Ultrahigh-Gain Amplifier and Super Source Follower for 0.297 mV/A Load Regulation and 0.024 mV/V Line Regulation 150 150
Author(s): Yu-Ting Huang, Xiao-Quan Wu, Chi-Yu Chen, Po-Jui Chiu, Chien-Wei Cho, Tz-Wun Wang, Ke-Horng Chen, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai, Sheng-Hsi Hung, Chih-Fang Huang, Philex Ming-Yan Fan, Tsorng-Juu Liang, Hann-Huei Tsai

Abstract:

The proposed capacitor-free hybrid-process low-dropout regulator (LDO) achieves 900-mA maximum current capacity and 99.99% peak current efficiency with 90 $\mu $ A quiescent current. By combining GaN and silicon processes, the proposed Ultrahigh gain amplifier (UHGA) enables a high loop gain to achieve 0.297-mV/A load regulation and 0.024-mV/V line regulation. Furthermore, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3702962
Publisher: IEEE

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A Bio-Impedance Readout IC With Phase-Locked Sampling for Real-Time Electrical Impedance Spectroscopy

A Bio-Impedance Readout IC With Phase-Locked Sampling for Real-Time Electrical Impedance Spectroscopy 150 150
Author(s): Seonghyun Park, Song-I Cheon, Haidam Choi, Sein Oh, Sohmyung Ha, Minkyu Je

Abstract:

This article presents an electrical bio-impedance (bioZ) spectroscopy integrated circuit (IC) that achieves both high-throughput and high-accuracy. The proposed phase-locked sampling (PLS) scheme, which employs a sampling phase-locked loop (SPLL) and a reference resistor ( $R_{\textit {REF}}$ ), enables fast and precise impedance demodulation. By extracting the impedance components through sampling …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3704052
Publisher: IEEE

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The Impact of Magnetic Field on Defective FDSOI and FinFET Devices

The Impact of Magnetic Field on Defective FDSOI and FinFET Devices 150 150
Author(s): Munazza Sayed, Hussam Amrouch

Abstract:

This article explores the efficacy of a unique defect detection mechanism for the FinFET and FDSOI transistors: magnetomodulation of drain current. Using multiphysics technology CAD (TCAD), we model the impact of static and transient magnetic fields on drain current in the following defect-free and defective devices: 1) FDSOI with interface trap …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 113 – 119
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3686904
Publisher: IEEE

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A 1.87-TELOPS/W 3-D Ising Machine for Accelerated Quantum Monte Carlo With Reconfigurability Using CMOS p-Bits

A 1.87-TELOPS/W 3-D Ising Machine for Accelerated Quantum Monte Carlo With Reconfigurability Using CMOS p-Bits 150 150
Author(s): Ming-Che Li, Archisman Ghosh, Risi Kumar Jaiswal, Supriyo Datta, Shreyas Sen

Abstract:

Qubit-based quantum annealing processors operate at ultra-low temperatures (15 mK) requiring enormous cooling energy. Consequently, there is a lot of interest in quantum Monte Carlo (QMC) algorithms that can be used to emulate quantum computing on classical machines. However, prior classical emulators implemented on CPUs, GPUs, or field-programmable gate arrays (FPGAs) …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3699984
Publisher: IEEE

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OISMA: On-the-Fly In-Memory Stochastic Multiplication Architecture for Approximate Matrix Multiplication

OISMA: On-the-Fly In-Memory Stochastic Multiplication Architecture for Approximate Matrix Multiplication 150 150
Author(s): Shady Agwa, Yihan Pan, Georgios Papandroulidakis, Themis Prodromakis

Abstract:

Artificial intelligence (AI) models are currently driven by a significant upscaling of their complexity, with massive matrix-multiplication workloads representing the major computational bottleneck. In-memory computing (IMC) architectures are proposed to avoid the von Neumann bottleneck. However, both digital/binary-based and analog IMC architectures suffer from various limitations, which significantly degrade …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 56 – 64
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3680281
Publisher: IEEE

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A Complementary Positive Feedback-Assisted Current Mirror-Based Level Shifter for Energy-Efficient Level Conversion for Wide Voltage Ranges

A Complementary Positive Feedback-Assisted Current Mirror-Based Level Shifter for Energy-Efficient Level Conversion for Wide Voltage Ranges 150 150
Author(s): Shin Han, Gicheol Shin, Jongmin Lee, Yoonmyung Lee

Abstract:

A complementary positive feedback-assisted current mirror-based level shifter (CPFLS) is proposed to reliably convert subthreshold signals to higher voltages. By adopting a positive feedback structure, the CPFLS mitigates the delay degradation and short-circuit current issues inherent in a prior art, WCMLS, due to its negative feedback design. Additionally, the CPFLS …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3687258
Publisher: IEEE

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