Integrated circuits

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A 6.78-MHz Single-Stage Regulating Rectifier With Dual Outputs Simultaneously Charged in a Half Cycle Achieving 92.2% Efficiency and 131 mW Output Power

A 6.78-MHz Single-Stage Regulating Rectifier With Dual Outputs Simultaneously Charged in a Half Cycle Achieving 92.2% Efficiency and 131 mW Output Power 150 150
Author(s): Quanrong Zhuang, Junyi Sun, Bo Li, Jie Lu, Zixu Wang, Qi’an Zhu, Xin Zhang, Yi Shi, Hao Qiu

Abstract:

Targeting the wireless power transfer (WPT) to implantable medical devices (IMDs), this work presents a 6.78 MHz single-stage dual-output (SSDO) regulating rectifier. It can support the simultaneous charging of both outputs ( $V_{\text {OUT1}}$ and $V_{\text {OUT2}}$ , $V_{\text {OUT1}} \gt V_{\text {OUT2}}$ ) in a half cycle, rather than …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3682308
Publisher: IEEE

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A 95.3% Efficiency APT/AET/SPT Multimode Multiband CMOS/GaN Envelope Tracking for 6G-Oriented Systems

A 95.3% Efficiency APT/AET/SPT Multimode Multiband CMOS/GaN Envelope Tracking for 6G-Oriented Systems 150 150
Author(s): Chun-Yuan Chen, Yi-Chun Huang, Ke-Horng Chen, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai

Abstract:

This article proposes an envelope-tracking (ET) supply modulator (SM) that is scalable for sixth-generation (6G) communication systems. The design leverages a cost-efficient CMOS process for the power converters and a high-performance GaN process for the high-frequency power amplifier (PA) and the depletion-mode-only GaN-based amplifier. The proposed ET supply modulator (ETSM) …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3681319
Publisher: IEEE

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A 0.4-V 988-nW Tiny Footprint Time-Domain Audio Feature Extraction ASIC for Keyword Spotting Using Injection-Locked Oscillators

A 0.4-V 988-nW Tiny Footprint Time-Domain Audio Feature Extraction ASIC for Keyword Spotting Using Injection-Locked Oscillators 150 150
Author(s): Ali Mostafa, Emmanuel Hardy, Franck Badets

Abstract:

This work presents an injection-locked oscillator (ILO)-based feature extraction (FEx) system. It combines voltage- and time-domain signal processing to implement a power-efficient programmable gain amplifier (PGA) and a small-footprint, high-selectivity ILO-based voltage-to-time converter bandpass filter (VTC-BPF) bank and rectifier. The VTC-BPF enables direct analog-to-time conversion, eliminating the need for …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3681481
Publisher: IEEE

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A 3nm Fin-FET 19.87-Mbit/mm2 2RW Pseudo Dual-Port 6T SRAM With Metal Wire-R Tracking and Sequential Access-Aware Dynamic Power Reduction

A 3nm Fin-FET 19.87-Mbit/mm2 2RW Pseudo Dual-Port 6T SRAM With Metal Wire-R Tracking and Sequential Access-Aware Dynamic Power Reduction 150 150
Author(s): Tomotaka Tanaka, Koji Nii, Yuichiro Ishii, Makoto Yabuuchi, Yumito Aoyagi, Masaya Hamada, Kazuto Mizutani, Hidehiro Fujiwara, Isabel Wang, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang

Abstract:

This article presents a 2-read/write (2RW) pseudo dual-port (PDP) static random access memory (SRAM) macro implemented in advanced 3nm Fin-FET technology, achieving a competitive bit density of 19.87Mbit/mm2 for advanced nodes. To address challenges in process scaling, reliability under process voltage temperature variations, and dynamic power consumption, two …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3682256
Publisher: IEEE

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Self-Enabled Write Assist Cells for High-Density SRAM in Resistance-Dominated Technology Node

Self-Enabled Write Assist Cells for High-Density SRAM in Resistance-Dominated Technology Node 150 150
Author(s): Minjune Yeo, Seungjae Yei, Keonhee Cho, Giseok Kim, Mingu Kang, Seong-Ook Jung

Abstract:

As technology scaling increases interconnect resistance, writeability degradation in static random access memory (SRAM) becomes critical. This article presents a self-enabled write assist cell (SEWAC) that mitigates writeability degradation caused by increased bitline resistance (R ${}_{\mathrm {BL}}$ ) without requiring timing control. The SEWAC has a cell-compatible layout with the standard 6…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3681916
Publisher: IEEE

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A Low-Jitter Fractional-N Sampling PLL With Voltage-Domain Quantization-Error Cancellation Using a Nonlinearity-Replication Technique

A Low-Jitter Fractional-N Sampling PLL With Voltage-Domain Quantization-Error Cancellation Using a Nonlinearity-Replication Technique 150 150
Author(s): Yuhwan Shin, Juyeop Kim, Junseok Lee, Yongwoo Jo, Jaehyouk Choi

Abstract:

This work presents a low-jitter, low-fractional-spur fractional- $N$ digital sampling phase-locked loop (SPLL) that generates output frequencies from 10.4to 11.8GHz. Conventional fractional- $N$ PLLs employ a digital-to-time converter (DTC) to cancel the quantization error (Q-error) of the delta-sigma modulator ( $Delta Sigma $ M). To address the nonlinearity (NL) of the DTC, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3681940
Publisher: IEEE

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High-Precision Close-to-Analog Programming of PCM Cells as Devices for AiMC Edge-AI

High-Precision Close-to-Analog Programming of PCM Cells as Devices for AiMC Edge-AI 150 150
Author(s): Alessio Antolini, Andrea Lico, Francesco Zavalloni, Lorenzo Greco, Riccardo Zurla, Jacopo Bertolini, Riccardo Vignali, Luca Iannelli, Emanuela Calvetti, Marco Pasotti, Alessandro Cabrini, Eleonora Franchi Scarselli

Abstract:

This article presents a high-precision close-to-analog programming methodology for phase-change memory (PCM) cells, targeting analog in-memory computing (AiMC) architectures for edge-artificial intelligence (AI) applications. By leveraging an iterative accumulation approach during the verify phase, the proposed technique enhances the effective number of bits (ENOBs) achievable in PCM cells. Experimental validation …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3680266
Publisher: IEEE

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A Continuous-Time Zoom Sensor Readout Frontend With Fast Tracking and Floating-Gm-CCO Integrator

A Continuous-Time Zoom Sensor Readout Frontend With Fast Tracking and Floating-Gm-CCO Integrator 150 150
Author(s): Haoyang Luo, Zongnan Wang, Jiarui Wang, Bingrui Li, Zilong Shen, Yang Liu, Xiaojie Duan, Yuan Wang, Xiyuan Tang

Abstract:

Emerging edge applications processing weak signals in noisy environments demand sensor readout frontends with low noise, low power, high dynamic range (DR), and high input impedance. This article presents a zoom sensor readout frontend design that can track signals with rapid changes over a wide DR with high energy efficiency. …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3677053
Publisher: IEEE

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An Ultralow Cross-Regulation Single-Inductor Multiple-Output (SIMO) Buck Converter Using Reordered Power-Distributive Control

An Ultralow Cross-Regulation Single-Inductor Multiple-Output (SIMO) Buck Converter Using Reordered Power-Distributive Control 150 150
Author(s): Baochuang Wang, Xiaonan Wu, Minghao Shang, Lin Cheng

Abstract:

A single-inductor multiple-output (SIMO) buck converter employing reordered power-distributive control (RPDC) is presented to achieve ultralow cross regulation. Adedicated power-distribution controller implements RPDC by adaptively adjusting the switching sequence: when the inductor current is insufficient, the switching period is extended, and when excessive, an end phase in the form of …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3680424
Publisher: IEEE

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