in-memory computing (IMC)

OISMA: On-the-Fly In-Memory Stochastic Multiplication Architecture for Approximate Matrix Multiplication

OISMA: On-the-Fly In-Memory Stochastic Multiplication Architecture for Approximate Matrix Multiplication 150 150

Abstract:

Artificial intelligence (AI) models are currently driven by a significant upscaling of their complexity, with massive matrix-multiplication workloads representing the major computational bottleneck. In-memory computing (IMC) architectures are proposed to avoid the von Neumann bottleneck. However, both digital/binary-based and analog IMC architectures suffer from various limitations, which significantly degrade …

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Coupled Simulation Methodology for In-Memory Computing Systems

Coupled Simulation Methodology for In-Memory Computing Systems 150 150

Abstract:

Simulations for the development and optimization of future in-memory computing (IMC) systems often face the problem that the modeling of the large system is desired, but at the same time, the effects at the device level should also be taken into account. Such effects could be due to the material …

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AACIM: A 2785-TOPS/W, 161-TOP/mm2, <1.17%-RMSE, Analog-In Analog-Out Computing-In-Memory Macro in 28 nm

AACIM: A 2785-TOPS/W, 161-TOP/mm2, <1.17%-RMSE, Analog-In Analog-Out Computing-In-Memory Macro in 28 nm 150 150

Abstract:

This article presents an analog-in analog-out CIM macro (AACIM) for use in analog deep neural network (DNN) processors. Our macro receives analog inputs, performs a 64-by-32 vector–matrix multiplication (VMM) with a current-discharging computation mechanism, and produces analog outputs. It stores a 4-bit weight as an analog voltage in the …

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Cryogenic Hyperdimensional In-Memory Computing Using Ferroelectric TCAM

Cryogenic Hyperdimensional In-Memory Computing Using Ferroelectric TCAM 150 150

Abstract:

Cryogenic operations of electronics present a significant step forward to achieve huge demand of in-memory computing (IMC) for high-performance computing, quantum computing, and military applications. Ferroelectric (FE) is a promising candidate to develop the complementary metal oxide semiconductor (CMOS)-compatible nonvolatile memories. Hence, in this work, we investigate the effectiveness …

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