impedance

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A Pseudo-Series Resonance CMOS Oscillator

A Pseudo-Series Resonance CMOS Oscillator 150 150
Author(s): Jiawen Chen, Kai Xu, Teerachot Siriburanon, Robert Bogdan Staszewski

Abstract:

This article presents a single-core, low-phase-noise (PN) digitally controlled oscillator (DCO) employing a pseudo-series resonance (pseudo-SR) technique with a transformer-based resonator. The proposed pseudo-SR resonator offers two key advantages: 1) a low impedance with a 180° phase shift at the impedance pole, emulating series resonance (SR) to enable single-stage oscillation and reduce …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3663515
Publisher: IEEE

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A Compact Reconfigurable Dual-Path Dual-Band LNA for 5G NR FR2 Applications

A Compact Reconfigurable Dual-Path Dual-Band LNA for 5G NR FR2 Applications 150 150
Author(s): Pei Qin, Junyu Wu, Taotao Xu, Yongchun Li, Wenjie Feng, Quan Xue, Wenquan Che

Abstract:

This article presents a reconfigurable dual-path dual-band low noise amplifier (LNA) for fifth generation (5G) millimeter-wave (mmW) communications. A novel band-switching input matching architecture based on the cross-connected transistors is proposed to achieve optimal dual-band input matching and $g_{m}$ -boosting. This architecture allows the dual-band input transistors to share …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3661593
Publisher: IEEE

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Analysis and Design of Power Amplifier Using Parallel-Combined Multisegment Transformer

Analysis and Design of Power Amplifier Using Parallel-Combined Multisegment Transformer 150 150
Author(s): Geuntae Kim, Hyunjin Ahn, Kyutaek Oh, Ilku Nam, Ockgoo Lee

Abstract:

This letter presents a highly efficient power amplifier (PA) using a parallel-combined vertical multisegment transformer for 5G new radio (NR) applications operating in bands n257 and n258, in a 65-nm bulk CMOS process. A multisegment transformer facilitates a lower provided input impedance than a conventional transformer, enabling the PA to …

Published in: IEEE Solid-State Circuits Letters
Page(s): 85 – 88
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3665218
Publisher: IEEE

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A Compact, Wideband Complex Cascode Power Amplifier With LC Neutralization for VSWR-Resilient Operation in High-Density Phased Arrays

A Compact, Wideband Complex Cascode Power Amplifier With LC Neutralization for VSWR-Resilient Operation in High-Density Phased Arrays 150 150
Author(s): Mohamed Eleraky, Tzu-Yuan Huang, Hua Wang

Abstract:

This article proposes a design methodology for achieving intrinsic performance resilience in power amplifiers (PAs) against antenna impedance variations inherent to modern phased-array systems through the improvement of the PA output matching ( $S!_{22}$ ). This goal, however, presents a challenge for conventional cascode PAs due to their inherently high output impedance …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 16
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3654669
Publisher: IEEE

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A 39.4-mW 300 MHz-BW 70.9 dB-SNDR Hybrid ADC With Resistive Input and 200 fs, rms-Jitter Tolerance

A 39.4-mW 300 MHz-BW 70.9 dB-SNDR Hybrid ADC With Resistive Input and 200 fs, rms-Jitter Tolerance 150 150
Author(s): Yanquan Luo, Mingtao Zhan, Yi Zhong, Nan Sun

Abstract:

This letter presents a power-efficient hybrid ADC architecture: a low-resolution continuous-time (CT) delta-sigma modulator (DSM) followed by a time-interleaved pipeline stage which further quantizes the quantization noise of the DSM. In the frontend CT DSM, the resistive input makes the ADC easy-to-drive, and the direct-charge-dump feedback (DCD FB) provides a …

Published in: IEEE Solid-State Circuits Letters
Page(s): 61 – 64
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3656180
Publisher: IEEE

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A Bidirectional Neuromodulation Chipset With Algorithm-Aware AFE Optimization and High-Voltage-Compliant Stimulation

A Bidirectional Neuromodulation Chipset With Algorithm-Aware AFE Optimization and High-Voltage-Compliant Stimulation 150 150
Author(s): Xiaohua Huang, Hoda Yassin, Beatriz Lafuente Alcazar, Arash Akhoundi, Dante G. Muratore

Abstract:

This work presents a bidirectional neuromodulation chipset with 64-channel neural analog front-end (AFE), and a four-channel current stimulator. The chipset employs a heterogeneous architecture, combining a 28-nm low-voltage (LV) CMOS process for the AFE and the digital backend (DBE) to improve area and power efficiency, with a 180-nm high-voltage (HV) …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3650066
Publisher: IEEE

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A 4 × 224 Gb/s Single-Ended PAM-4 Transceiver Front-End With Noise Suppression Technique and Cascaded Equalizers in 130-nm SiGe BiCMOS

A 4 × 224 Gb/s Single-Ended PAM-4 Transceiver Front-End With Noise Suppression Technique and Cascaded Equalizers in 130-nm SiGe BiCMOS 150 150
Author(s): Xiongshi Luo, Xuewei You, Zhenghao Li, Hongzhi Wu, Yangyi Zhang, Fuzhan Chen, Xuxu Cheng, Wentao Zhou, Quan Pan

Abstract:

A dc-coupled analog single-ended (SE) transceiver (TRX) front-end supporting 224 Gb/s/lane is presented. It features SE-to-differential (S2D) and differential-to-SE (D2S) conversion, power-efficient broadband analog equalization, and noise suppression. Both the transmitter and receiver front-ends adopt pseudodifferential structures with dual-loop regulators to achieve a high power supply rejection …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 10
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3644437
Publisher: IEEE

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A Broadband and Compact GaN Millimeter-Wave MMIC SPDT Switch Using Modified π-Networks

A Broadband and Compact GaN Millimeter-Wave MMIC SPDT Switch Using Modified π-Networks 150 150
Author(s): Chaorong Wang, Quan Pan, Xiaohu Fang

Abstract:

This letter presents a design methodology for broadband and compact millimeter-wave (mm-wave) single-pole double-throw (SPDT) switches targeting the Ku–Ka band. Conventional SPDT switches based on quarter-wavelength transmission line typically occupy significant chip area, while alternative designs utilizing standard $\pi $ -type equivalent circuits often suffer from bandwidth degradation due to …

Published in: IEEE Solid-State Circuits Letters
Page(s): 21 – 24
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3646815
Publisher: IEEE

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A “No Gain” Direct-Conversion IQ RF-to-Bits Receiver Without Active Linear Amplification

A “No Gain” Direct-Conversion IQ RF-to-Bits Receiver Without Active Linear Amplification 150 150
Author(s): Jeroen Ponte, Roel Plompen, Emiel Zijlma, Eric A. M. Klumperink, Harijot Singh Bindra, Bram Nauta

Abstract:

This work describes a direct-conversion IQ receiver (RX) that does not utilize any active linear (power) amplification, covering its design considerations, prototype implementation, and measurement verification. Only RLC components, MOS transistor (MOST) switches, and comparators are used, leading to several unique design challenges. Key among these are the fact that …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 17
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3611114
Publisher: IEEE

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