impedance

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A 60-GHz Class-F2,3 Standing-wave Oscillator Employing Triple-line Resonator Achieving -189 dBc/Hz FoM in 65-nm CMOS

A 60-GHz Class-F2,3 Standing-wave Oscillator Employing Triple-line Resonator Achieving -189 dBc/Hz FoM in 65-nm CMOS 150 150
Author(s): Wei-Yu Lin, Nikhil Jain, Jun-Chau Chien

Abstract:

Implementing oscillators with harmonic engineering beyond 60 GHz poses significant challenges due to the need for small inductors resonating beyond 120 GHz. To address this issue, this work presents a 60-GHz standing-wave oscillator with both 2nd and 3rd-harmonic boosting for phase noise reduction. A triple-line resonator is proposed to sustain both fundamental …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3693153
Publisher: IEEE

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Adaptive Linearity Enhancement of Low-Noise Amplifiers Using Doherty Active Load Modulation

Adaptive Linearity Enhancement of Low-Noise Amplifiers Using Doherty Active Load Modulation 150 150
Author(s): Hao Yu, Zhaojing Fu, Lianbo Liu, Qiang Zhou, Taiyun Chi, Sensen Li

Abstract:

This article introduces Doherty active load modulation into low-noise amplifier (LNA) designs to dynamically enhance linearity. Under nominal small-signal conditions, the proposed LNA operates like conventional counterparts, consuming no additional power. When strong in-band blockers are present, auxiliary paths are adaptively engaged to activate a high-linearity mode without incurring a …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3667125
Publisher: IEEE

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A 142–164-GHz Phased-Array AiP Module With High-Power-Density and High-Efficiency Transceiver in 65-nm CMOS for 6G UE

A 142–164-GHz Phased-Array AiP Module With High-Power-Density and High-Efficiency Transceiver in 65-nm CMOS for 6G UE 150 150
Author(s): Yudai Yamazaki, Yohei Morishita, Sunghwan Park, Takaya Uchino, Chenxin Liu, Jun Sakamaki, Akihiro Egami, Ryosuke Hasaba, Ken Takahashi, Tomoki Abe, Tomohiro Murata, Yoichi Nakagawa, Takashi Tomura, Hiroshi Taneda, Kei Murayama, Makoto Tsukahara, Hiroko Ota, Yoko Nakabayashi, Ryuji Kinugawa, Takumi Kojima, Anyi Tian, Kotaro Ito, Chun Wang, Hans Herdian, Yi Zhang, Zheng Li, Wenqian Wang, Hongye Huang, Dingxin Xu, Sena Kato, Michihiro Ide, Shinsuke Hara, Issei Watanabe, Akifumi Kasamatsu, Yuncheng Zhang, Hiroyuki Sakai, Kazuaki Kunihiro, Atsushi Shirane, Koji Takinami, Kenichi Okada

Abstract:

This work presents a D-band high-power-density four-element phased-array transceiver for 6G user equipment (UE). Conventional designs require large multi-stage LO generation circuits for D-band up/down conversion, making it difficult to achieve compact size and low-power consumption. To address this, we propose an integrated LO chain using an injection-locked tripling …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1275 – 1293
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3665184
Publisher: IEEE

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A K/Ka-Band Transmit/Receive Front-End With Triple-Coupled Transformer Technique in 65-nm Bulk CMOS

A K/Ka-Band Transmit/Receive Front-End With Triple-Coupled Transformer Technique in 65-nm Bulk CMOS 150 150
Author(s): Nayu Li, Ziyao Xiong, Botao Yang, Hang Lu, Yiwei Liu, Xiaokang Qi, Gaopeng Chen, Na Yan, Chunyi Song, Zhiwei Xu

Abstract:

This article presents a K/Ka-band transmit/receive (T/R) front-end for jointed sensing and communication (JSAC) applications. A reconfigurable matching network for both signal reception and transmission is realized using the proposed triple-coupled transformer (TCT) technique, achieving low power loss and a compact footprint. The T/R switch at …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3667736
Publisher: IEEE

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A 2–18 GHz High-Efficiency CMOS Nonuniform Distributed Power Amplifier With a Novel Reconfigurable Inductive Termination

A 2–18 GHz High-Efficiency CMOS Nonuniform Distributed Power Amplifier With a Novel Reconfigurable Inductive Termination 150 150
Author(s): Bo Pang, Fei You, Taotao Pang, Rongxing Qin, Zehua Xiao, Yingjie Liu, Yingyu Liu, Xinyu Wang, Junfu Guo, Songbai He

Abstract:

This article presents a 2–18 GHz high-efficiency CMOS nonuniform distributed power amplifier (NDPA) with a novel reconfigurable inductive termination technique for ultra-broadband efficiency enhancement. First, the inherent drawback of the degrading efficiency with growing frequency in a conventional non-reconfigurable NDPA architecture with multi-octave bandwidth is studied. A simple and effective reconfigurable …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3665920
Publisher: IEEE

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A Pseudo-Series Resonance CMOS Oscillator

A Pseudo-Series Resonance CMOS Oscillator 150 150
Author(s): Jiawen Chen, Kai Xu, Teerachot Siriburanon, Robert Bogdan Staszewski

Abstract:

This article presents a single-core, low-phase-noise (PN) digitally controlled oscillator (DCO) employing a pseudo-series resonance (pseudo-SR) technique with a transformer-based resonator. The proposed pseudo-SR resonator offers two key advantages: 1) a low impedance with a 180° phase shift at the impedance pole, emulating series resonance (SR) to enable single-stage oscillation and reduce …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3663515
Publisher: IEEE

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A Compact Reconfigurable Dual-Path Dual-Band LNA for 5G NR FR2 Applications

A Compact Reconfigurable Dual-Path Dual-Band LNA for 5G NR FR2 Applications 150 150
Author(s): Pei Qin, Junyu Wu, Taotao Xu, Yongchun Li, Wenjie Feng, Quan Xue, Wenquan Che

Abstract:

This article presents a reconfigurable dual-path dual-band low noise amplifier (LNA) for fifth generation (5G) millimeter-wave (mmW) communications. A novel band-switching input matching architecture based on the cross-connected transistors is proposed to achieve optimal dual-band input matching and $g_{m}$ -boosting. This architecture allows the dual-band input transistors to share …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3661593
Publisher: IEEE

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Analysis and Design of Power Amplifier Using Parallel-Combined Multisegment Transformer

Analysis and Design of Power Amplifier Using Parallel-Combined Multisegment Transformer 150 150
Author(s): Geuntae Kim, Hyunjin Ahn, Kyutaek Oh, Ilku Nam, Ockgoo Lee

Abstract:

This letter presents a highly efficient power amplifier (PA) using a parallel-combined vertical multisegment transformer for 5G new radio (NR) applications operating in bands n257 and n258, in a 65-nm bulk CMOS process. A multisegment transformer facilitates a lower provided input impedance than a conventional transformer, enabling the PA to …

Published in: IEEE Solid-State Circuits Letters
Page(s): 85 – 88
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3665218
Publisher: IEEE

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A Compact, Wideband Complex Cascode Power Amplifier With LC Neutralization for VSWR-Resilient Operation in High-Density Phased Arrays

A Compact, Wideband Complex Cascode Power Amplifier With LC Neutralization for VSWR-Resilient Operation in High-Density Phased Arrays 150 150
Author(s): Mohamed Eleraky, Tzu-Yuan Huang, Hua Wang

Abstract:

This article proposes a design methodology for achieving intrinsic performance resilience in power amplifiers (PAs) against antenna impedance variations inherent to modern phased-array systems through the improvement of the PA output matching ( $S!_{22}$ ). This goal, however, presents a challenge for conventional cascode PAs due to their inherently high output impedance …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 16
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3654669
Publisher: IEEE

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