The Impact of Magnetic Field on Defective FDSOI and FinFET devices https://sscs.ieee.org/wp-content/themes/movedo/images/empty/thumbnail.jpg 150 150 https://secure.gravatar.com/avatar/8fcdccb598784519a6037b6f80b02dee03caa773fc8d223c13bfce179d70f915?s=96&d=mm&r=g
Abstract:
This paper explores the efficacy of a unique defect detection mechanism for the FinFET and FDSOI transistors: magnetomodulation of drain current. Using multi-physics Technology CAD (TCAD), we model the impact of static and transient magnetic field on drain current in the following defect-free and defective devices: (a) FDSOI with interface …