Design methodology

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A Sensing-Security Co-Design Based on Intrinsic Device Variations for Self-Authenticating Sensors

A Sensing-Security Co-Design Based on Intrinsic Device Variations for Self-Authenticating Sensors 150 150
Author(s): Ruochen Wang, Tetsuya Hirose, Jun Shiomi, Yoshihiro Midoh, Takuji Miki, Makoto Nagata, Noriyuki Miura

Abstract:

This article presents an extended analog signature framework (ASF) that realizes sensing-security co-design by embedding authentication directly within the sensor analog front-end. Building on prior work, the extended design addresses entropy stabilization and structural periodicity through refined selection and measurement-bound feedback. Intrinsic transistor-level mismatches are reused as resources for authenticating, …

Published in: IEEE Solid-State Circuits Letters
Page(s): 246 – 249
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3725256
Publisher: IEEE

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A CMOS LNA with an Integrated Direct-Conversion Mixer-Based Power Detector for Low-Power IoT Radio Applications

A CMOS LNA with an Integrated Direct-Conversion Mixer-Based Power Detector for Low-Power IoT Radio Applications 150 150
Author(s): Yunfan Gao, Minghan Liu, Mengting Yan, Cristian Cassella, Miriam Leeser, Marvin Onabajo

Abstract:

This letter presents a 2.8-GHz low-power CMOS low-noise amplifier (LNA) with an embedded self-mixing power detector (PD) for low-overhead RF power monitoring. The detector reuses two existing LNA node voltages as the signal and local oscillator (LO) inputs for direct down-conversion mixing, which avoids a dedicated LO generator, coupler, or …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3725828
Publisher: IEEE

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A Current-Mode Non-Destructive Circuit Readout Scheme for High-Density 3D Ferroelectric Memory

A Current-Mode Non-Destructive Circuit Readout Scheme for High-Density 3D Ferroelectric Memory 150 150
Author(s): CHaohan Wang, Wagdy Hussein, Yang Xiang, Shankha Mukherjee, Ismail Cevik, Fernando García-Redondo, Annachiara Spagnolo, Hyungrock Oh, Marie Garcia Bardon, Nick Van Helleputte, Julien Ryckaert, Geert Hellings, Dwaipayan Biswas, Jan Van Houdt

Abstract:

The AI era is demanding ever-increasing memory capacity and bandwidth, where 3D-stacked ferroelectric memory (FeRAMs) utilizing nondestructive readout (NDRO) ferroelectric capacitors (FeCAPs) stand as a promising candidate. This work addresses NDRO sensing signal challenges in deeply scaled 3D FeRAMs using a current-mode sensing scheme, co-designed with the device architecture to …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3727137
Publisher: IEEE

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Self-Heating and Parasitic Effects in Multi-Tier CFET Design

Self-Heating and Parasitic Effects in Multi-Tier CFET Design 150 150
Author(s): Sufia Shahin, Mahdi Benkhelifa, Yogesh Singh Chauhan, Hussam Amrouch

Abstract:

In this article, we study the impact of self-heating effects (SHEs) and middle of line (MOL) and back-end of line (BEOL) induced parasitics on multi-tier CFET design, where multiple nanosheet devices are vertically stacked. We analyze and compare the four-tier complementary FET (CFET) design with the conventional two-tier CFET, using …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 153 – 158
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3704373
Publisher: IEEE

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Topology-Aware Layout Design for Area-Decoupled Transistor Sizing in Multitier CFET SRAM

Topology-Aware Layout Design for Area-Decoupled Transistor Sizing in Multitier CFET SRAM 150 150
Author(s): Yutian Zhang, Jiaquan Fang, Khawar Sarfraz, Mansun Chan

Abstract:

This work shows that a multitier complementary FET (CFET) static random access memory (SRAM) can decouple the area term from PPA-oriented transistor sizing. A topology-aware layout design is used to construct orthogonal and point-symmetric multitier CFET SRAM cells under 1-nm-class design rules, enabling high-density (HD), high-performance (HP), and high-current (HC) …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 159 – 166
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3709007
Publisher: IEEE

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A 6.3–18.4 GHz I/Q Receiver With RF and LO Path Reconfigurability for 6G FR3 Applications in 22-nm FD-SOI

A 6.3–18.4 GHz I/Q Receiver With RF and LO Path Reconfigurability for 6G FR3 Applications in 22-nm FD-SOI 150 150
Author(s): Haisu Ju, Yingtao Zou, Gabriel M. Rebeiz

Abstract:

This article presents a 6.3–18.4 GHz in-phase and quadrature (I/Q) direct down-conversion receiver featuring reconfigurability in both the radio frequency (RF) and local oscillator (LO) paths. The receiver comprises a multi-band reconfigurable RF front-end, double-balanced passive I/Q mixers, an I/Q LO generation network with a tunable I/Q …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 4558 – 4571
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3698025
Publisher: IEEE

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CTH-CAM: A Cryogenic eDRAM-Based CAM With 1–26 Tunable Hamming Distance

CTH-CAM: A Cryogenic eDRAM-Based CAM With 1–26 Tunable Hamming Distance 150 150
Author(s): Jincheng Wang, Yuxin Zhou, Bin Ning, Lintao Lan, Yifei Li, Xufeng Kou, Yuhao Shu, Yajun Ha

Abstract:

Cryogenic approximate content-addressable memory (ACAM) offers an appealing solution that allows mismatches between the query and the stored data, measured by the Hamming distance (HD). However, in ACAM designs, increasing the word length shrinks the matchline (ML) voltage spacing between adjacent HD tolerance levels, thereby limiting the tunable-HD tolerance range …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3722705
Publisher: IEEE

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TexCAC: A Direct-Textile-Attachable Microcontroller Integrating 2-MB MRAM for the Command and Control of Advanced Smart Textiles

TexCAC: A Direct-Textile-Attachable Microcontroller Integrating 2-MB MRAM for the Command and Control of Advanced Smart Textiles 150 150
Author(s): Jacob Mack, Qirui Zhang, He Wang, Yi Shen, Jeongtaek Chang, Heejin Yang, Anjali Agrawal, Zichen Fan, Braden Desman, Zane Lewis, Thomas Farrell, David Blaauw, Will Farrell, Jim Owens, Benton H. Calhoun, Dennis Sylvester

Abstract:

Advanced smart textiles (ASTs) are textile-integrated electronic systems that enable many applications, including healthcare, robotics, and IoT. ASTs contain a variety of electronic components to enable whole system functionality (batteries, sensors, SoCs, etc.), which all require orchestration from a central command-and-control (CAC) module. The primary functions of the CAC module …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 3307 – 3316
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3695482
Publisher: IEEE

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A 28-nm FD-SOI CMOS Analog-IMC Core Based on PCM Featuring 8 512 × 512-Weight Layers and 28M Weights×TOPs/W/mm2

A 28-nm FD-SOI CMOS Analog-IMC Core Based on PCM Featuring 8 512 × 512-Weight Layers and 28M Weights×TOPs/W/mm2 150 150
Author(s): Marco Pasotti, Riccardo Zurla, J. J. Bertolini Agnoletto, Emanuela Calvetti, Alessio Antolini, Andrea Lico, Giuseppe Desoli, Riccardo Vignali, Luca Iannelli, Luigi Croce, Francesco Zavalloni, Eleonora Franchi Scarselli, Alessandro Cabrini

Abstract:

In-memory computing (IMC) hardware accelerators for deep neural networks (DNNs) require storing a massive number of coefficients within a single computing macro to avoid performance degradation in multicore clusters. This aspect, often overlooked by common figures of merit (FoMs), can be effectively addressed by phase-change memory (PCM) technology, thanks to …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 3193 – 3207
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3693894
Publisher: IEEE

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