Delays

  • No Comments

A 0.7-V Multiclass Digital Doherty Power Amplifier for BLE Applications With 41% Peak DE in 22-nm CMOS

A 0.7-V Multiclass Digital Doherty Power Amplifier for BLE Applications With 41% Peak DE in 22-nm CMOS 150 150
Author(s): Edoardo Baiesi Fietta, David Seebacher, Davide Ponton, Andrea Bevilacqua

Abstract:

This letter presents a multiclass, asymmetric digital Doherty power amplifier (DDPA) for Bluetooth low energy (BLE) applications, that achieves high efficiency at full-scale as well as at 8.6-dB back-off using a single 0.7-V supply voltage. The proposed DDPA is made of two power-combined switched-capacitor power amplifiers (SCPAs) and uses an …

Published in: IEEE Solid-State Circuits Letters
Page(s): 217 – 220
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3591570
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A 32 Gb/s 0.36 pJ/bit 3 nm Chiplet IO Using 2.5-D CoWoS Package With Real-Time and Per-Lane CDR and Bathtub Monitoring

A 32 Gb/s 0.36 pJ/bit 3 nm Chiplet IO Using 2.5-D CoWoS Package With Real-Time and Per-Lane CDR and Bathtub Monitoring 150 150
Author(s): Junhui Gu, John Ma, Azhar Ahmed Chowdhury, Jianmin Guo, Xin Zhang, Jackson Ding, Hui Wang, Ken Chang

Abstract:

This article presents a high-density, single-ended non return to zero (NRZ) chiplet I/O implemented with 3 nm CMOS technology on a 2.5-D chip-on-wafer-on-substrate (CoWoS) interposer, accommodating trace lengths up to 2 mm. The design features 216 data lanes, each operating at 32 Gb/s. For the tested 2-mm trace, the channel insertion loss …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1289 – 1298
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3545483
Publisher: IEEE

View on IEEE Xplore

Search this website