Self-Enabled Write Assist Cells for High-Density SRAM in Resistance-Dominated Technology Node https://sscs.ieee.org/wp-content/themes/movedo/images/empty/thumbnail.jpg 150 150 https://secure.gravatar.com/avatar/8fcdccb598784519a6037b6f80b02dee03caa773fc8d223c13bfce179d70f915?s=96&d=mm&r=g
Abstract:
As technology scaling increases interconnect resistance, writeability degradation in static random access memory (SRAM) becomes critical. This article presents a self-enabled write assist cell (SEWAC) that mitigates writeability degradation caused by increased bitline resistance (R ${}_{\mathrm {BL}}$ ) without requiring timing control. The SEWAC has a cell-compatible layout with the standard 6…