A 28-nm 18.7 TOPS/mm $^2$ 89.4-to-234.6 TOPS/W 8b Single-Finger eDRAM Compute-in-Memory Macro With Bit-Wise Sparsity Aware and Kernel-Wise Weight Update/Refresh https://sscs.ieee.org/wp-content/themes/movedo/images/empty/thumbnail.jpg 150 150 https://secure.gravatar.com/avatar/8935a7dcd6741d8e23d45bb15c1470a8?s=96&d=mm&r=g
Abstract:
This article reports a high-density 3T1C single-finger (SF) embedded dynamic random access memory (eDRAM) compute-in-memory (CIM) macro. It features several techniques that enhance the memory density, the energy efficiency, and the throughput density, namely: 1) a high-density 3T1C SF-eDRAM cell with low-leakage retention (LLR) to improve the memory density …