CMOS

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An Inductive-Load-Modulated Multiband Phase Shifter With <0.38°/0.12-dB RMS Errors

An Inductive-Load-Modulated Multiband Phase Shifter With <0.38°/0.12-dB RMS Errors 150 150
Author(s): Xinyi Wu, Chenxu Zhao, Hui Chen, Xun Bao, Yaolong Hu, Aoyang Zhang, Leibo Liu

Abstract:

This letter presents a compact, multiband reflection-type phase shifter (RTPS) implemented in 65-nm CMOS that overcomes the narrowband limitations of conventional passive loads. The proposed design utilizes an inductive-load modulation. By injecting a secondary signal to actively manipulate the magnetic flux, the equivalent inductance is boosted to enable operation across …

Published in: IEEE Solid-State Circuits Letters
Page(s): 170 – 173
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3694867
Publisher: IEEE

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A 40k-Pixel Multimodal Biophysiology Monitoring Platform With 10k Concurrent Electrophysiology Channels and a Mixer-Embedded ΣΔ Impedance Sensor

A 40k-Pixel Multimodal Biophysiology Monitoring Platform With 10k Concurrent Electrophysiology Channels and a Mixer-Embedded ΣΔ Impedance Sensor 150 150
Author(s): Hangxing Liu, Fuze Jiang, Jingjing Zang, Marco Saif, Thomas Burger, Stephan C. F. Neuhauss, Hua Wang

Abstract:

Understanding complex physiological processes requires the ability to monitor multiple biological modalities concurrently, as electrical, ionic, and biochemical processes are tightly coupled and cannot be holistically described by single-mode sensors. This article presents a 40 nm CMOS multimodal cellular physiology monitoring platform that integrates 40 960 reconfigurable pixels at $10.8~\mu $ m pixel pitch. …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3684715
Publisher: IEEE

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A 40-GS/s 8-bit Time-Interleaved ADC Featuring SFDR-Enhanced Sampling and Power-Efficient Time-Domain Quantization in 28-nm CMOS

A 40-GS/s 8-bit Time-Interleaved ADC Featuring SFDR-Enhanced Sampling and Power-Efficient Time-Domain Quantization in 28-nm CMOS 150 150
Author(s): Chenghao Zhang, Maliang Liu, Yuan Chang, Yihang Yang, Jinhai Xiao, Yintang Yang, Yong Chen

Abstract:

This article reports a 40-GS/s 8-bit time-interleaved (TI) time-domain (TD) gated-ring-oscillator analog-to-digital converter (GRO-ADC). An interleaving number of 32 is achieved with a single-channel 8-bit GRO-ADC operating at 1.25 GS/s, leading to a low front-end design complexity compared to recently published arts. The sampling front end employs a linearity-enhanced boosted …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1907 – 1920
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3671459
Publisher: IEEE

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Adaptive Linearity Enhancement of Low-Noise Amplifiers Using Doherty Active Load Modulation

Adaptive Linearity Enhancement of Low-Noise Amplifiers Using Doherty Active Load Modulation 150 150
Author(s): Hao Yu, Zhaojing Fu, Lianbo Liu, Qiang Zhou, Taiyun Chi, Sensen Li

Abstract:

This article introduces Doherty active load modulation into low-noise amplifier (LNA) designs to dynamically enhance linearity. Under nominal small-signal conditions, the proposed LNA operates like conventional counterparts, consuming no additional power. When strong in-band blockers are present, auxiliary paths are adaptively engaged to activate a high-linearity mode without incurring a …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3667125
Publisher: IEEE

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A 2–18 GHz High-Efficiency CMOS Nonuniform Distributed Power Amplifier With a Novel Reconfigurable Inductive Termination

A 2–18 GHz High-Efficiency CMOS Nonuniform Distributed Power Amplifier With a Novel Reconfigurable Inductive Termination 150 150
Author(s): Bo Pang, Fei You, Taotao Pang, Rongxing Qin, Zehua Xiao, Yingjie Liu, Yingyu Liu, Xinyu Wang, Junfu Guo, Songbai He

Abstract:

This article presents a 2–18 GHz high-efficiency CMOS nonuniform distributed power amplifier (NDPA) with a novel reconfigurable inductive termination technique for ultra-broadband efficiency enhancement. First, the inherent drawback of the degrading efficiency with growing frequency in a conventional non-reconfigurable NDPA architecture with multi-octave bandwidth is studied. A simple and effective reconfigurable …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3665920
Publisher: IEEE

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Sub-Terahertz Wideband ASK Transceiver for 14/27/64 Gb/s 0.27-km/0.12-m/0.1-mm Interconnection in 28-nm CMOS

Sub-Terahertz Wideband ASK Transceiver for 14/27/64 Gb/s 0.27-km/0.12-m/0.1-mm Interconnection in 28-nm CMOS 150 150
Author(s): Dawei Tang, Xiaoyue Xia, Leyang Huang, Zekun Li, Chun Yang, Zheng Yan, Si-Yuan Tang, Peigen Zhou, Rui Zhang, Liqun Lu, Wentao Zhu, Zhe Chen, Jixin Chen, Hao Gao, Wei Hong

Abstract:

This article presents a 28-nm CMOS sub-terahertz (sub-THz) amplitude shift-keying (ASK) transceiver achieving competitive wireless and wireline communication performance. The over-the-air (OTA) link demonstrates 14 Gb/s/0.27 km, 16Gb/s/1m, and 27 Gb/s/12 cm without equalization (EQ), while supporting 64 Gb/s on-Off keying (OOK) and 40 Gb/s pulse amplitude modulation (…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 17
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3665552
Publisher: IEEE

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A 7056-PPI Pixel Circuit With Low-Leakage Structure for Active-Matrix Monochrome Micro-LED Displays

A 7056-PPI Pixel Circuit With Low-Leakage Structure for Active-Matrix Monochrome Micro-LED Displays 150 150
Author(s): Chih-Lung Lin, Cheng-Han Ke, Yu-Chang Chiu, Yuan-Yu Lai, Yi-Chien Chen, Cheng-Rui Lu, Yu-Hsiang Fu, Chih-Chuan Huang

Abstract:

This work presents a 5T2C pixel circuit for active-matrix (AM) micro-displays in near-eye display applications. The circuit supports monochrome micro light-emitting diode (micro-LED) displays with ultrahigh resolution of 7056 pixels per inch (PPI). The circuit is designed and fabricated based on medium-voltage (MV) devices from the 55-nm high-voltage (HV) CMOS …

Published in: IEEE Solid-State Circuits Letters
Page(s): 89 – 92
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3667520
Publisher: IEEE

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A Pseudo-Series Resonance CMOS Oscillator

A Pseudo-Series Resonance CMOS Oscillator 150 150
Author(s): Jiawen Chen, Kai Xu, Teerachot Siriburanon, Robert Bogdan Staszewski

Abstract:

This article presents a single-core, low-phase-noise (PN) digitally controlled oscillator (DCO) employing a pseudo-series resonance (pseudo-SR) technique with a transformer-based resonator. The proposed pseudo-SR resonator offers two key advantages: 1) a low impedance with a 180° phase shift at the impedance pole, emulating series resonance (SR) to enable single-stage oscillation and reduce …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3663515
Publisher: IEEE

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Analysis and Design of Power Amplifier Using Parallel-Combined Multisegment Transformer

Analysis and Design of Power Amplifier Using Parallel-Combined Multisegment Transformer 150 150
Author(s): Geuntae Kim, Hyunjin Ahn, Kyutaek Oh, Ilku Nam, Ockgoo Lee

Abstract:

This letter presents a highly efficient power amplifier (PA) using a parallel-combined vertical multisegment transformer for 5G new radio (NR) applications operating in bands n257 and n258, in a 65-nm bulk CMOS process. A multisegment transformer facilitates a lower provided input impedance than a conventional transformer, enabling the PA to …

Published in: IEEE Solid-State Circuits Letters
Page(s): 85 – 88
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3665218
Publisher: IEEE

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