CMOS

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A 2–18 GHz High-Efficiency CMOS Nonuniform Distributed Power Amplifier With a Novel Reconfigurable Inductive Termination

A 2–18 GHz High-Efficiency CMOS Nonuniform Distributed Power Amplifier With a Novel Reconfigurable Inductive Termination 150 150
Author(s): Bo Pang, Fei You, Taotao Pang, Rongxing Qin, Zehua Xiao, Yingjie Liu, Yingyu Liu, Xinyu Wang, Junfu Guo, Songbai He

Abstract:

This article presents a 2–18 GHz high-efficiency CMOS nonuniform distributed power amplifier (NDPA) with a novel reconfigurable inductive termination technique for ultra-broadband efficiency enhancement. First, the inherent drawback of the degrading efficiency with growing frequency in a conventional non-reconfigurable NDPA architecture with multi-octave bandwidth is studied. A simple and effective reconfigurable …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3665920
Publisher: IEEE

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Sub-Terahertz Wideband ASK Transceiver for 14/27/64 Gb/s 0.27-km/0.12-m/0.1-mm Interconnection in 28-nm CMOS

Sub-Terahertz Wideband ASK Transceiver for 14/27/64 Gb/s 0.27-km/0.12-m/0.1-mm Interconnection in 28-nm CMOS 150 150
Author(s): Dawei Tang, Xiaoyue Xia, Leyang Huang, Zekun Li, Chun Yang, Zheng Yan, Si-Yuan Tang, Peigen Zhou, Rui Zhang, Liqun Lu, Wentao Zhu, Zhe Chen, Jixin Chen, Hao Gao, Wei Hong

Abstract:

This article presents a 28-nm CMOS sub-terahertz (sub-THz) amplitude shift-keying (ASK) transceiver achieving competitive wireless and wireline communication performance. The over-the-air (OTA) link demonstrates 14 Gb/s/0.27 km, 16Gb/s/1m, and 27 Gb/s/12 cm without equalization (EQ), while supporting 64 Gb/s on-Off keying (OOK) and 40 Gb/s pulse amplitude modulation (…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 17
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3665552
Publisher: IEEE

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A 7056-PPI Pixel Circuit with Low-Leakage Structure for Active-Matrix Monochrome Micro-LED Displays

A 7056-PPI Pixel Circuit with Low-Leakage Structure for Active-Matrix Monochrome Micro-LED Displays 150 150
Author(s): Chih-Lung Lin, Cheng-Han Ke, Yu-Chang Chiu, Yuan-Yu Lai, Yi-Chien Chen, Cheng-Rui Lu, Yu-Hsiang Fu, Chih-Chuan Huang

Abstract:

This work presents a 5T2C pixel circuit for active-matrix (AM) micro-displays in near-eye display applications. The circuit supports monochrome micro light-emitting diode (micro-LED) displays with ultra-high resolution of 7056 pixels per inch (PPI). The circuit is designed and fabricated based on medium-voltage (MV) devices from the 55-nm high-voltage (HV) CMOS …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3667520
Publisher: IEEE

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A Pseudo-Series Resonance CMOS Oscillator

A Pseudo-Series Resonance CMOS Oscillator 150 150
Author(s): Jiawen Chen, Kai Xu, Teerachot Siriburanon, Robert Bogdan Staszewski

Abstract:

This article presents a single-core, low-phase-noise (PN) digitally controlled oscillator (DCO) employing a pseudo-series resonance (pseudo-SR) technique with a transformer-based resonator. The proposed pseudo-SR resonator offers two key advantages: 1) a low impedance with a 180° phase shift at the impedance pole, emulating series resonance (SR) to enable single-stage oscillation and reduce …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3663515
Publisher: IEEE

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Analysis and Design of Power Amplifier Using Parallel-Combined Multisegment Transformer

Analysis and Design of Power Amplifier Using Parallel-Combined Multisegment Transformer 150 150
Author(s): Geuntae Kim, Hyunjin Ahn, Kyutaek Oh, Ilku Nam, Ockgoo Lee

Abstract:

This letter presents a highly efficient power amplifier (PA) using a parallel-combined vertical multisegment transformer for 5G new radio (NR) applications operating in bands n257 and n258, in a 65-nm bulk CMOS process. A multisegment transformer facilitates a lower provided input impedance than a conventional transformer, enabling the PA to …

Published in: IEEE Solid-State Circuits Letters
Page(s): 85 – 88
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3665218
Publisher: IEEE

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A Modular Ring-Oscillator Array Chip for Accurate Stress Testing of CMOS Aging Mechanisms

A Modular Ring-Oscillator Array Chip for Accurate Stress Testing of CMOS Aging Mechanisms 150 150
Author(s): Javier Diaz-Fortuny, Erik Bury, Robin Degraeve, Ben Kaczer

Abstract:

Ring-oscillator (RO) circuits have historically been used to characterize the performance of CMOS technologies, as they can easily expose both process variability and aging through a straightforward circuit structure. ROs are widely employed to study degradation mechanisms such as bias temperature instability (BTI) and hot carrier degradation (HCD), which progressively …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3653472
Publisher: IEEE

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A Fully-Integrated Wireless Ingestible CMOS Drug-Delivery Chip With Electrochemical Energy Harvesting and pH-Adaptive MPPT for Personalized Therapeutics

A Fully-Integrated Wireless Ingestible CMOS Drug-Delivery Chip With Electrochemical Energy Harvesting and pH-Adaptive MPPT for Personalized Therapeutics 150 150
Author(s): So-Yoon Yang, Deniz Umut Yildirim, Saransh Sharma, Donghyeon Han, Rishabh Mittal, Husna T. Ellis, Jaehong Jung, Eunseok Lee, Yubin Cai, Giovanni Traverso, Anantha P. Chandrakasan

Abstract:

The rapid growth of personalized medicine has driven increased demand for battery-free, energy-efficient ingestible electronics for on-demand gastrointestinal (GI) drug delivery. This article presents the first fully-integrated, battery-free ingestible CMOS platform that harvests energy from a galvanic cell (GC) through a reconfigurable switched-capacitor converter, with pH-adaptive maximum power point tracking (…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1082 – 1095
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3647275
Publisher: IEEE

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A 19.4-fsRMS Jitter 0.1-to-44-GHz Cryo-CMOS Fractional-N CP-PLL Featuring Automatic Bleed Calibration for Quantum Computing

A 19.4-fsRMS Jitter 0.1-to-44-GHz Cryo-CMOS Fractional-N CP-PLL Featuring Automatic Bleed Calibration for Quantum Computing 150 150
Author(s): Jinhai Xiao, Yong Chen, Ningyi Zhang, Xiaolong Liu, Rui Liu, Junao Zhu, Chenghao Zhang, Peng Luo, Maliang Liu, Yintang Yang, Xiaohua Ma, Yue Hao

Abstract:

Cryogenic fractional- $N$ phase-locked loops (PLLs) are essential for large-scale superconducting quantum computing, and serve as integrated pump sources for Josephson parametric amplifiers. These PLLs enable high-fidelity qubit readout while reducing the thermal load and wiring complexity associated with room-temperature generators. However, the cryogenic pump sources developed thus far were …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 19
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3653994
Publisher: IEEE

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0.13 K NETD D-Band CMOS Passive Imager With Noise Suppression Analysis

0.13 K NETD D-Band CMOS Passive Imager With Noise Suppression Analysis 150 150
Author(s): Zahra Mohseni, Sajjad Sabbaghi, Hai Yu, Peixin Han, Yuhao Yuan, Qun Jane Gu

Abstract:

This article presents a new system design and in-depth analysis of a wideband, low-power passive imaging receiver based on a Dicke-switch architecture, implemented in 28 nm CMOS technology. The proposed structure employs a three-coil gm-boosting technique for the low-noise amplifier (LNA). This approach reduces the LNA’s noise figure (NF) and …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 830 – 846
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3646943
Publisher: IEEE

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