Circuits

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Merged-Reference-Compatible Offset-Canceling Discharge-Based Sensing Circuit for STT-MRAM in 28-nm CMOS

Merged-Reference-Compatible Offset-Canceling Discharge-Based Sensing Circuit for STT-MRAM in 28-nm CMOS 150 150
Author(s): Jaeyong Jang, Mingu Han, Jaehwan Kim, Taehui Na

Abstract:

This article proposes an offset-canceling (OC) discharge-based sensing circuit (OCDC) for spin-transfer-torque magnetic random access memory (STT-MRAM). The proposed circuit simultaneously implements a merged reference line (MRL) architecture and threshold voltage ( $\mathbf {V}_{\mathbf {TH}}$ ) mismatch cancellation, resolving the structural incompatibility between the conventional OC schemes and MRL. A diode-connection-based, …

Published in: IEEE Solid-State Circuits Letters
Page(s): 210 – 213
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3715234
Publisher: IEEE

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Self-Heating and Parasitic Effects in Multi-Tier CFET Design

Self-Heating and Parasitic Effects in Multi-Tier CFET Design 150 150
Author(s): Sufia Shahin, Mahdi Benkhelifa, Yogesh Singh Chauhan, Hussam Amrouch

Abstract:

In this article, we study the impact of self-heating effects (SHEs) and middle of line (MOL) and back-end of line (BEOL) induced parasitics on multi-tier CFET design, where multiple nanosheet devices are vertically stacked. We analyze and compare the four-tier complementary FET (CFET) design with the conventional two-tier CFET, using …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 153 – 158
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3704373
Publisher: IEEE

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Probabilistic Computing With Neuromorphic Elements

Probabilistic Computing With Neuromorphic Elements 150 150
Author(s): Zonglong Li, Laurie E. Calvet

Abstract:

This article presents a compact and low-power approach to probabilistic inference based on time-domain analog computation. The proposed system implements a Bayesian classifier using neuromorphic circuit elements simulated in a 130-nm CMOS technology. Probabilities are encoded in the duty cycle of deterministic spiking signals generated by neuron circuits, while likelihood …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 167 – 175
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3712198
Publisher: IEEE

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TexCAC: A Direct-Textile-Attachable Microcontroller Integrating 2-MB MRAM for the Command and Control of Advanced Smart Textiles

TexCAC: A Direct-Textile-Attachable Microcontroller Integrating 2-MB MRAM for the Command and Control of Advanced Smart Textiles 150 150
Author(s): Jacob Mack, Qirui Zhang, He Wang, Yi Shen, Jeongtaek Chang, Heejin Yang, Anjali Agrawal, Zichen Fan, Braden Desman, Zane Lewis, Thomas Farrell, David Blaauw, Will Farrell, Jim Owens, Benton H. Calhoun, Dennis Sylvester

Abstract:

Advanced smart textiles (ASTs) are textile-integrated electronic systems that enable many applications, including healthcare, robotics, and IoT. ASTs contain a variety of electronic components to enable whole system functionality (batteries, sensors, SoCs, etc.), which all require orchestration from a central command-and-control (CAC) module. The primary functions of the CAC module …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 3307 – 3316
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3695482
Publisher: IEEE

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A 28-nm FD-SOI CMOS Analog-IMC Core Based on PCM Featuring 8 512 × 512-Weight Layers and 28M Weights×TOPs/W/mm2

A 28-nm FD-SOI CMOS Analog-IMC Core Based on PCM Featuring 8 512 × 512-Weight Layers and 28M Weights×TOPs/W/mm2 150 150
Author(s): Marco Pasotti, Riccardo Zurla, J. J. Bertolini Agnoletto, Emanuela Calvetti, Alessio Antolini, Andrea Lico, Giuseppe Desoli, Riccardo Vignali, Luca Iannelli, Luigi Croce, Francesco Zavalloni, Eleonora Franchi Scarselli, Alessandro Cabrini

Abstract:

In-memory computing (IMC) hardware accelerators for deep neural networks (DNNs) require storing a massive number of coefficients within a single computing macro to avoid performance degradation in multicore clusters. This aspect, often overlooked by common figures of merit (FoMs), can be effectively addressed by phase-change memory (PCM) technology, thanks to …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 3193 – 3207
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3693894
Publisher: IEEE

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Current-Locked-Loop: A Circuit Topology for Reconfigurable High-Accuracy CMOS References

Current-Locked-Loop: A Circuit Topology for Reconfigurable High-Accuracy CMOS References 150 150
Author(s): Sining Pan, Xiaohan Liu, Ziyi Li, Minge Jiang, Yihang Cheng, Zhong Tang, Huaqiang Wu

Abstract:

This article introduces a circuit topology for building reconfigurable, high-accuracy CMOS current and voltage references, namely, current-locked-loop (CLL). The CLL regulates the $V_{\mathrm {GS}}$ of a current source transistor and thus its current output using a digitally assisted feedback loop, thereby enabling higher order temperature coefficient (TC) compensation and …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3711071
Publisher: IEEE

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1-Transistor-Dynamic Random Access Memory as Reservoir for Temporal Signal Processing

1-Transistor-Dynamic Random Access Memory as Reservoir for Temporal Signal Processing 150 150
Author(s): Md Yasir Bashir, Lalith Adithya Sai C., Shubham Sahay

Abstract:

Reservoir computing (RC), a computational paradigm inspired by the recurrent neural networks (RNNs), offers a promising framework for efficient temporal processing with minimal training overhead. Hardware implementation of RC primitive requires devices that exhibit short-term memory, nonlinearity, and energy-efficient state-switching dynamics. While emerging nonvolatile memory (eNVM) technologies have been explored …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 120 – 128
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3690766
Publisher: IEEE

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Benchmarking of Emerging Material-Based TCAMs

Benchmarking of Emerging Material-Based TCAMs 150 150
Author(s): Ashwin Tunga, Junzhe Kang, Zijing Zhao, Ankit Shukla, Wenjuan Zhu, Shaloo Rakheja

Abstract:

This work presents a comprehensive benchmarking of ternary content-addressable memory (TCAM) implementations using timing-accurate SPICE simulations, systematically comparing conventional CMOS designs with emerging device technologies, including magnetic tunnel junctions (MTJs), ferroelectric tunnel junctions (FTJs), ferroelectric field-effect transistors (FeFETs), and 2-D reconfigurable field-effect transistors (2D RFETs). Key performance metrics, including search …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 104 – 112
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3687143
Publisher: IEEE

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A CMOS Probabilistic Computing Chip With Hardware-Aware Learning

A CMOS Probabilistic Computing Chip With Hardware-Aware Learning 150 150
Author(s): Jinesh Jhonsa, William Whitehead, Yihao Wu, David Mccarthy, Shuvro Chowdhury, Kerem Y. Camsari, Luke Theogarajan

Abstract:

This work demonstrates a compact probabilistic computing system based on a physics-inspired probabilistic bit (p-bit) architecture with 440 interacting spins configured in a chimera graph and occupying 0.44 mm2 of silicon area. Area efficiency is achieved through a current-mode neuron update circuit and a mixed-signal design approach that integrates pitch-matched standard-cell analog …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 86 – 94
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3689506
Publisher: IEEE

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