Capacitors

  • No Comments

A 39.4mW 300MHz-BW 70.9dB-SNDR Hybrid ADC With Resistive Input and 200fs,rms-Jitter Tolerance

A 39.4mW 300MHz-BW 70.9dB-SNDR Hybrid ADC With Resistive Input and 200fs,rms-Jitter Tolerance 150 150
Author(s): Yanquan Luo, Mingtao Zhan, Yi Zhong, Nan Sun

Abstract:

This paper presents a power-efficient hybrid ADC architecture: a low-resolution CT Delta-Sigma modulator (DSM) followed by a time-interleaved pipeline stage which further quantizes the quantization noise of the DSM. In the frontend CT DSM, the resistive input makes the ADC easy-to-drive, and the direct-charge-dump feedback provides a high jitter-immunity; the …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3656180
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A 92.1-dB SNDR Easy-Driving Two-Step NS-SAR-Based Incremental ADC With Concurrent Gain-Error Plus Noise Suppression

A 92.1-dB SNDR Easy-Driving Two-Step NS-SAR-Based Incremental ADC With Concurrent Gain-Error Plus Noise Suppression 150 150
Author(s): Chenyang Li, Tzu-Han Wang, Dongsuk Kang, Ken Li, Xitie Zhang, Wei-En Lee, Visvesh S. Sathe, Shaolan Li

Abstract:

This article presents a two-step incremental analog-to-digital converter (ADC) that achieves high resolution and energy efficiency while substantially easing the input driving constraints and interstage gain variation. By employing a level-shifted sub-ranging architecture with an input-tracking (IT) feature, the design obviates direct input sampling, thereby significantly relaxing the demands on …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3635146
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A Calibration-Free Pipelined-SAR ADC With Cross-Stage Gain-Mismatch Error Shaping and Inherent Noise Shaping

A Calibration-Free Pipelined-SAR ADC With Cross-Stage Gain-Mismatch Error Shaping and Inherent Noise Shaping 150 150
Author(s): Jihang Gao, Yaohui Luan, Siyuan Ye, Jiajia Cui, Xinhang Xu, Linxiao Shen

Abstract:

This article presents a calibration-free pipelined-successive-approximation-register (SAR) analog-to-digital converter (ADC) based on the proposed cross-stage gain-mismatch-error shaping (CS-GMES) mechanism. The CS-GMES is realized by including the entire 2nd stage into MES operation to unify the gain error and the 2nd-stage mismatch error. A feedback capacitor provides cross-stage connection and mismatch …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3624412
Publisher: IEEE

View on IEEE Xplore

  • No Comments

DPe-CIM: A 4T-1C Dual-Port eDRAM-Based Compute-in-Memory for Simultaneous Computing and Refresh With Adaptive Refresh and Data Conversion Reduction Scheme

DPe-CIM: A 4T-1C Dual-Port eDRAM-Based Compute-in-Memory for Simultaneous Computing and Refresh With Adaptive Refresh and Data Conversion Reduction Scheme 150 150
Author(s): Do Han Kim, Minyoung Jo, Gi Seok Kim, Dong Gyun Ha, Ung Bin Oh, Donghan Ko, Jiwoo Lee, Mingu Kang, Seong-Ook Jung

Abstract:

This article presents DPe-CIM, a 4T-1C dual-port embedded dynamic random access memory (eDRAM)-based compute-in-memory (CIM) macro with adaptive refresh and data conversion reduction. DPe-CIM proposes four key features that improve area and energy efficiency: 1) dual-port eDRAM cell (DPC) separates the multiply-and-accumulate (MAC) and refresh ports, enabling simultaneous MAC …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3623117
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A 560 μ W, 6 fA/√Hz, 146 dB-DR Ultrasensitive Current Readout Circuit for PWM-Dimming-Tolerant Under-Display Ambient Light Sensors

A 560 μ W, 6 fA/√Hz, 146 dB-DR Ultrasensitive Current Readout Circuit for PWM-Dimming-Tolerant Under-Display Ambient Light Sensors 150 150
Author(s): Xiuzhi Zhao, Liheng Liu, Shi Chen, Tianxiang Qu, Qinjing Pan, Dan Li, Gan Guo, Zhiliang Hong, Jiawei Xu

Abstract:

This letter presents an ultralow-noise, power-efficient, and pulse-width modulation (PWM)-dimming-tolerant photocurrent readout circuit for under-display ambient light sensor (ALS). A transimpedance amplifier (TIA) with a feedback diode achieves G $\Omega $ -level resistance and 6 fA/ $\surd $ Hz input current noise, enabling sub-pA resolution. Instability and noise folding are mitigated at …

Published in: IEEE Solid-State Circuits Letters
Page(s): 361 – 364
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3626378
Publisher: IEEE

View on IEEE Xplore

  • No Comments

3D-IC Chiplet Integrated Power Supply With LDO, SCVR, and Buck DC–DC Converter

3D-IC Chiplet Integrated Power Supply With LDO, SCVR, and Buck DC–DC Converter 150 150
Author(s): Xiaosen Liu, Xichen Sun, Renwei Chen, Haozhe Zhang, Zhoutong Liu, Yan Wang

Abstract:

With the rapid advancement of chiplet and heterogenous integration technologies, delivering power through the package, redistribution layer (RDL), and chip layers in 3-D space has become a fundamental challenge for high-performance SoCs. This letter provides a comprehensive overview of power delivery solutions, including low-dropout regulator (LDOs), switched capacitor converters, and …

Published in: IEEE Solid-State Circuits Letters
Page(s): 341 – 344
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3624096
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A Dual-Input Bidirectional Three-Level Battery Charger Using Coarse-Fine V CF Balancing and Frequency Foldback Control for Foldable Mobile Applications

A Dual-Input Bidirectional Three-Level Battery Charger Using Coarse-Fine V CF Balancing and Frequency Foldback Control for Foldable Mobile Applications 150 150
Author(s): Woojin Hong, Hyebong Ko, Jinwoo So, Woonhyung Heo, Yonghwan Cho, Jeongdu Yoo, Ho-Sung Son, Youngwoo Chung, Dong-Joon Kim, Byeonghyeon Jin, Minkyu Kwon, Kyungmin Park, Daeyong Han, Sungkye Cho, Daewoong Cho, Jung Wook Heo, Sungwoo Lee, Sungwoo Moon, Hyoung-Seok Oh, Hwayeal Yu

Abstract:

Foldable mobile applications recently have been leading the battery charger to have a slim height with a small form-factor and high efficiency at higher input voltages to increase the power density. Another trend for mobile applications is the power sharing, which enables to supply two mobile devices simultaneously. To meet …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3618150
Publisher: IEEE

View on IEEE Xplore

  • No Comments

Understanding Reliability Trade-Offs in 1T-nC and 2T-nC FeRAM Designs

Understanding Reliability Trade-Offs in 1T-nC and 2T-nC FeRAM Designs 150 150
Author(s): Sadik Yasir Tauki, Rudra Biswas, Rakesh Acharya, Jiahui Duan, Rajiv Joshi, Kai Ni, Vijaykrishnan Narayanan

Abstract:

Ferroelectric random access memory (FeRAM) is a promising candidate for energy-efficient nonvolatile memory, particularly for logic-in-memory and compute-in-memory (CIM) applications. Among the available cell architectures, One-Transistor–n-Capacitor (1T-nC) and two-transistor–n-capacitor (2T-nC) FeRAMs each offer distinct trade-offs in density, scalability, and reliability. In this work, we present a comparative study …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 148 – 156
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3619908
Publisher: IEEE

View on IEEE Xplore

  • No Comments

Benchmarking of FERAM-Based Memory System by Optimizing Ferroelectric Device Model

Benchmarking of FERAM-Based Memory System by Optimizing Ferroelectric Device Model 150 150
Author(s): Mohammad Adnaan, Saeideh Alinezhad Chamazcoti, Emil Karimov, Marie Garcia Bardon, Francky Catthoor, Jan van Houdt, Azad Naeemi

Abstract:

We present a framework for design technology co-optimization (DTCO) of the main memory system with one transistor-one capacitor (1T1C) ferroelectric random access memory (FERAM) as an alternative to dynamic random access memory (DRAM). We start with the ferroelectric capacitor device model and perform array-level memory circuit simulation. Then, we …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 99 – 106
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3618883
Publisher: IEEE

View on IEEE Xplore

Search this website