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A Multi-Event, 7.9-ps Resolution Time Amplification-Based TDC With an Ultra-Low Static Phase Error DLL Using Interpolator Recycling Technique for dToF Applications

A Multi-Event, 7.9-ps Resolution Time Amplification-Based TDC With an Ultra-Low Static Phase Error DLL Using Interpolator Recycling Technique for dToF Applications 150 150
Author(s): Xiayu Wang, Zhaoyang Zhou, Chunlin Li, Jin Hu, Dong Li, Yang Liu, Rui Ma, Zhangming Zhu

Abstract:

In this article, a multi-event time-to-digital converter (TDC) with a high conversion rate using an interpolator recycling technique is proposed. The conversion dead time is greatly reduced by reusing the coarse interpolation channel (CIC) during the quantization of Start and Stop signals. A high resolution is achieved by a coarse–…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3525085
Publisher: IEEE

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A Photovoltaic Dynamic Vision Sensor

A Photovoltaic Dynamic Vision Sensor 150 150
Author(s): Pablo Fernández-Peramo, Juan Antonio Leñero-Bardallo, Ángel Rodríguez-Vázquez

Abstract:

This article reports a dynamic vision sensor (DVS) proof-of-concept chip employing an unconventional photo-transduction front end. Instead of the conventional logarithmic transducer comprising a photodiode and a nonlinear load, the proposed pixel architecture uses a single diode operating in the photovoltaic regime. This operation regime, the same as employed for …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 0
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3524244
Publisher: IEEE

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Design of a Compact, Highly Efficient, and High-Power Q-/V-Band SiGe HBT Cascode Power Amplifier With a Four-Way Wilkinson Power Combiner Balun

Design of a Compact, Highly Efficient, and High-Power Q-/V-Band SiGe HBT Cascode Power Amplifier With a Four-Way Wilkinson Power Combiner Balun 150 150
Author(s): Hanjung Lee, Insu Han, Inchan Ju

Abstract:

This article presents a compact, efficient, and linear Q-/V-band silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) cascode power amplifier (PA) for emerging very low-Earth-orbit (VLEO) satellite communication (SATCOM). A novel four-way Wilkinson combiner balun (WCB), realized by two coupled line impedance inverting baluns (ZIBs) and isolation (ISO) resistors ( $R_{…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3523867
Publisher: IEEE

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A 0.5-V 125-MHz 256-Kb 22-nm SRAM With 10-aJ/bit Active Energy and 10-pW/bit Shutdown Power

A 0.5-V 125-MHz 256-Kb 22-nm SRAM With 10-aJ/bit Active Energy and 10-pW/bit Shutdown Power 150 150
Author(s): Jinn-Shyan Wang, Chien-Tung Liu, Yu-Chuan Hou

Abstract:

Conventional low-voltage (LV) static random access memories (SRAMs) utilizing separate read-and-write assist circuits sacrifice access speed too much, leading to poor energy efficiency. Overlaying additional assist circuits to enable power-saving modes can exacerbate speed loss and energy inefficiency. This work proposes a coordinated read-write-hold-retention-shutdown (SD) assist circuit design for SRAMs …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 10
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3520631
Publisher: IEEE

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A 0.5-V 125-MHz 256-Kb 22-nm SRAM With 10-aJ/bit Active Energy and 10-pW/bit Shutdown Power

A 0.5-V 125-MHz 256-Kb 22-nm SRAM With 10-aJ/bit Active Energy and 10-pW/bit Shutdown Power 150 150
Author(s): Jinn-Shyan Wang, Chien-Tung Liu, Yu-Chuan Hou

Abstract:

Conventional low-voltage (LV) static random access memories (SRAMs) utilizing separate read-and-write assist circuits sacrifice access speed too much, leading to poor energy efficiency. Overlaying additional assist circuits to enable power-saving modes can exacerbate speed loss and energy inefficiency. This work proposes a coordinated read-write-hold-retention-shutdown (SD) assist circuit design for SRAMs …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 10
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3520631
Publisher: IEEE

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A 0.5-V 125-MHz 256-Kb 22-nm SRAM With 10-aJ/bit Active Energy and 10-pW/bit Shutdown Power

A 0.5-V 125-MHz 256-Kb 22-nm SRAM With 10-aJ/bit Active Energy and 10-pW/bit Shutdown Power 150 150
Author(s): Jinn-Shyan Wang, Chien-Tung Liu, Yu-Chuan Hou

Abstract:

Conventional low-voltage (LV) static random access memories (SRAMs) utilizing separate read-and-write assist circuits sacrifice access speed too much, leading to poor energy efficiency. Overlaying additional assist circuits to enable power-saving modes can exacerbate speed loss and energy inefficiency. This work proposes a coordinated read-write-hold-retention-shutdown (SD) assist circuit design for SRAMs …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 10
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3520631
Publisher: IEEE

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A 0.5-V 125-MHz 256-Kb 22-nm SRAM With 10-aJ/bit Active Energy and 10-pW/bit Shutdown Power

A 0.5-V 125-MHz 256-Kb 22-nm SRAM With 10-aJ/bit Active Energy and 10-pW/bit Shutdown Power 150 150
Author(s): Jinn-Shyan Wang, Chien-Tung Liu, Yu-Chuan Hou

Abstract:

Conventional low-voltage (LV) static random access memories (SRAMs) utilizing separate read-and-write assist circuits sacrifice access speed too much, leading to poor energy efficiency. Overlaying additional assist circuits to enable power-saving modes can exacerbate speed loss and energy inefficiency. This work proposes a coordinated read-write-hold-retention-shutdown (SD) assist circuit design for SRAMs …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 10
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3520631
Publisher: IEEE

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A 10-Gb/s Optical Receiver With Monolithically Integrated PIN Photodiode, Novel AGC, and Sensitivity of –27.1 dBm for BER 10-3

A 10-Gb/s Optical Receiver With Monolithically Integrated PIN Photodiode, Novel AGC, and Sensitivity of –27.1 dBm for BER 10-3 150 150
Author(s): Wenyu Zhou, Larry Tarof, Rony E. Amaya

Abstract:

A monolithically integrated optical receiver in InP for 10-Gb/s intensity modulation direct detect (IMDD) application is presented. The sensitivity at the bit error rate (BER) $rm 10^{-3}$ is measured to be –27.1 dBm. An integrated PIN diode photodetector (PD) minimizes the parasitics caused by wire bonds between the PD and …

Published in: IEEE Solid-State Circuits Letters
Page(s): 13 – 16
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2024.3511582
Publisher: IEEE

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A 10-Gb/s Optical Receiver With Monolithically Integrated PIN Photodiode, Novel AGC, and Sensitivity of –27.1 dBm for BER 10-3

A 10-Gb/s Optical Receiver With Monolithically Integrated PIN Photodiode, Novel AGC, and Sensitivity of –27.1 dBm for BER 10-3 150 150
Author(s): Wenyu Zhou, Larry Tarof, Rony E. Amaya

Abstract:

A monolithically integrated optical receiver in InP for 10-Gb/s intensity modulation direct detect (IMDD) application is presented. The sensitivity at the bit error rate (BER) $rm 10^{-3}$ is measured to be –27.1 dBm. An integrated PIN diode photodetector (PD) minimizes the parasitics caused by wire bonds between the PD and …

Published in: IEEE Solid-State Circuits Letters
Page(s): 13 – 16
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2024.3511582
Publisher: IEEE

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