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A 0.5-V 125-MHz 256-Kb 22-nm SRAM With 10-aJ/bit Active Energy and 10-pW/bit Shutdown Power

A 0.5-V 125-MHz 256-Kb 22-nm SRAM With 10-aJ/bit Active Energy and 10-pW/bit Shutdown Power 150 150
Author(s): Jinn-Shyan Wang, Chien-Tung Liu, Yu-Chuan Hou

Abstract:

Conventional low-voltage (LV) static random access memories (SRAMs) utilizing separate read-and-write assist circuits sacrifice access speed too much, leading to poor energy efficiency. Overlaying additional assist circuits to enable power-saving modes can exacerbate speed loss and energy inefficiency. This work proposes a coordinated read-write-hold-retention-shutdown (SD) assist circuit design for SRAMs …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 10
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3520631
Publisher: IEEE

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A 0.5-V 125-MHz 256-Kb 22-nm SRAM With 10-aJ/bit Active Energy and 10-pW/bit Shutdown Power

A 0.5-V 125-MHz 256-Kb 22-nm SRAM With 10-aJ/bit Active Energy and 10-pW/bit Shutdown Power 150 150
Author(s): Jinn-Shyan Wang, Chien-Tung Liu, Yu-Chuan Hou

Abstract:

Conventional low-voltage (LV) static random access memories (SRAMs) utilizing separate read-and-write assist circuits sacrifice access speed too much, leading to poor energy efficiency. Overlaying additional assist circuits to enable power-saving modes can exacerbate speed loss and energy inefficiency. This work proposes a coordinated read-write-hold-retention-shutdown (SD) assist circuit design for SRAMs …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 10
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3520631
Publisher: IEEE

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A 10-Gb/s Optical Receiver With Monolithically Integrated PIN Photodiode, Novel AGC, and Sensitivity of –27.1 dBm for BER 10-3

A 10-Gb/s Optical Receiver With Monolithically Integrated PIN Photodiode, Novel AGC, and Sensitivity of –27.1 dBm for BER 10-3 150 150
Author(s): Wenyu Zhou, Larry Tarof, Rony E. Amaya

Abstract:

A monolithically integrated optical receiver in InP for 10-Gb/s intensity modulation direct detect (IMDD) application is presented. The sensitivity at the bit error rate (BER) $rm 10^{-3}$ is measured to be –27.1 dBm. An integrated PIN diode photodetector (PD) minimizes the parasitics caused by wire bonds between the PD and …

Published in: IEEE Solid-State Circuits Letters
Page(s): 13 – 16
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2024.3511582
Publisher: IEEE

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A 10-Gb/s Optical Receiver With Monolithically Integrated PIN Photodiode, Novel AGC, and Sensitivity of –27.1 dBm for BER 10-3

A 10-Gb/s Optical Receiver With Monolithically Integrated PIN Photodiode, Novel AGC, and Sensitivity of –27.1 dBm for BER 10-3 150 150
Author(s): Wenyu Zhou, Larry Tarof, Rony E. Amaya

Abstract:

A monolithically integrated optical receiver in InP for 10-Gb/s intensity modulation direct detect (IMDD) application is presented. The sensitivity at the bit error rate (BER) $rm 10^{-3}$ is measured to be –27.1 dBm. An integrated PIN diode photodetector (PD) minimizes the parasitics caused by wire bonds between the PD and …

Published in: IEEE Solid-State Circuits Letters
Page(s): 13 – 16
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2024.3511582
Publisher: IEEE

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A 10-Gb/s Optical Receiver With Monolithically Integrated PIN Photodiode, Novel AGC, and Sensitivity of –27.1 dBm for BER 10-3

A 10-Gb/s Optical Receiver With Monolithically Integrated PIN Photodiode, Novel AGC, and Sensitivity of –27.1 dBm for BER 10-3 150 150
Author(s): Wenyu Zhou, Larry Tarof, Rony E. Amaya

Abstract:

A monolithically integrated optical receiver in InP for 10-Gb/s intensity modulation direct detect (IMDD) application is presented. The sensitivity at the bit error rate (BER) $rm 10^{-3}$ is measured to be –27.1 dBm. An integrated PIN diode photodetector (PD) minimizes the parasitics caused by wire bonds between the PD and …

Published in: IEEE Solid-State Circuits Letters
Page(s): 13 – 16
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2024.3511582
Publisher: IEEE

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Guest Editorial Introduction to the Special Section on the 2024 IEEE International Solid-State Circuits Conference (ISSCC)

Guest Editorial Introduction to the Special Section on the 2024 IEEE International Solid-State Circuits Conference (ISSCC) 150 150
Author(s): Drew A. Hall, Yan Lu, Nima Maghari, Wei Deng, Vito Giannini

Abstract:

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Published in: IEEE Journal of Solid-State Circuits
Page(s): 3879 – 3883
Year of Publication: 2024
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3485320
Publisher: IEEE

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Guest Editorial Introduction to the Special Section on the 2024 IEEE International Solid-State Circuits Conference (ISSCC)

Guest Editorial Introduction to the Special Section on the 2024 IEEE International Solid-State Circuits Conference (ISSCC) 150 150
Author(s): Drew A. Hall, Yan Lu, Nima Maghari, Wei Deng, Vito Giannini

Abstract:

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Published in: IEEE Journal of Solid-State Circuits
Page(s): 3879 – 3883
Year of Publication: 2024
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3485320
Publisher: IEEE

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Guest Editorial Introduction to the Special Section on the 2024 IEEE International Solid-State Circuits Conference (ISSCC)

Guest Editorial Introduction to the Special Section on the 2024 IEEE International Solid-State Circuits Conference (ISSCC) 150 150
Author(s): Drew A. Hall, Yan Lu, Nima Maghari, Wei Deng, Vito Giannini

Abstract:

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Published in: IEEE Journal of Solid-State Circuits
Page(s): 3879 – 3883
Year of Publication: 2024
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3485320
Publisher: IEEE

View on IEEE Xplore

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Guest Editorial Introduction to the Special Section on the 2024 IEEE International Solid-State Circuits Conference (ISSCC)

Guest Editorial Introduction to the Special Section on the 2024 IEEE International Solid-State Circuits Conference (ISSCC) 150 150
Author(s): Drew A. Hall, Yan Lu, Nima Maghari, Wei Deng, Vito Giannini

Abstract:

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Published in: IEEE Journal of Solid-State Circuits
Page(s): 3879 – 3883
Year of Publication: 2024
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3485320
Publisher: IEEE

View on IEEE Xplore

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