IEEE Solid-State Circuits Letters

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A Broadband and Compact GaN Millimeter-Wave MMIC SPDT Switch Using Modified π-Networks

A Broadband and Compact GaN Millimeter-Wave MMIC SPDT Switch Using Modified π-Networks 150 150
Author(s): Chaorong Wang, Quan Pan, Xiaohu Fang

Abstract:

This letter presents a design methodology for broadband and compact millimeter-wave (mm-wave) single-pole double-throw (SPDT) switches targeting the Ku–Ka band. Conventional SPDT switches based on quarter-wavelength transmission line typically occupy significant chip area, while alternative designs utilizing standard $\pi $ -type equivalent circuits often suffer from bandwidth degradation due to …

Published in: IEEE Solid-State Circuits Letters
Page(s): 21 – 24
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3646815
Publisher: IEEE

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220 GHz, 8.5-dBm Saturated Output Power Wideband Power Amplifier in SiGe BiCMOS

220 GHz, 8.5-dBm Saturated Output Power Wideband Power Amplifier in SiGe BiCMOS 150 150
Author(s): Xun Chen, Jonas Winkelhake, Muh-Dey Wei, Renato Negra

Abstract:

This letter presents a broadband $G$ -band power amplifier (PA) designed in a 130-nm silicon-germanium (SiGe) bipolar complementary metal-oxide-semiconductor technology. Unlike dual-band matching and staggered tuning techniques to obtain large operation bandwidth (BW), we propose a common broadband amplification stage in this work for its flexibility. In each stage, inductive …

Published in: IEEE Solid-State Circuits Letters
Page(s): 17 – 20
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3646267
Publisher: IEEE

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Actiniaria: Distributed Dynamic-IR-Drop-Aware Timing Monitor for AVFS With Lightweight Tentacles

Actiniaria: Distributed Dynamic-IR-Drop-Aware Timing Monitor for AVFS With Lightweight Tentacles 150 150
Author(s): Junyi Qian, Lishuo Deng, Cai Li, Yizhi Ding, Weiwei Shan

Abstract:

Advances in integrated circuit (IC) technology have amplified the effects of process, voltage, and temperature (PVT) variations, particularly dynamic IR drop, which severely affects timing. Post-silicon IR drop monitoring circuits are lacking, forcing designers to reserve substantial static guard bands for worst-case scenarios, compromising energy efficiency. Inspired by biomimetics, this …

Published in: IEEE Solid-State Circuits Letters
Page(s): 25 – 28
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3645701
Publisher: IEEE

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A 28-nm FeFET Compute-in-Memory Macro With 64×64 Array Size and On-Chip 4-Bit Flash ADC

A 28-nm FeFET Compute-in-Memory Macro With 64×64 Array Size and On-Chip 4-Bit Flash ADC 150 150
Author(s): Vaidehi Garg, Jianwei Jia, Omkar Phadke, Shimeng Yu

Abstract:

Compute-in-memory (CIM) using emerging nonvolatile memory devices is a promising candidate for energy-efficient deep neural network (DNN) inference at the edge. Ferroelectric field-effect transistors (FeFETs) have recently gained attention as nonvolatile, CMOS-compatible devices with a higher on/off ratio and lower read and write energy compared to resistive random-access memory (…

Published in: IEEE Solid-State Circuits Letters
Page(s): 13 – 16
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3640522
Publisher: IEEE

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A 500 MS/s Robust 2b/cycle Pipelined-SAR ADC Achieving 64.6-dB SNDR and 82.6-dB SFDR With Linearity Enhancement Techniques

A 500 MS/s Robust 2b/cycle Pipelined-SAR ADC Achieving 64.6-dB SNDR and 82.6-dB SFDR With Linearity Enhancement Techniques 150 150
Author(s): Qiang Yu, Zheng Zhu, Lulu Zhang, Qin Huang, Yao Feng, Chao Liang, Biao Hu, Ling Du, Rongbin Yang, Shuangyi Wu, Qiang Li

Abstract:

This letter presents a 14-bit 500-MS/s 3-stage pipelined successive approximation register (SAR) analog-to-digital converter (ADC). By exploiting robust 2b/cycle SAR ADCs, this ADC incorporates significant voltage and time redundancy. High SFDR is achieved through several linearity enhancement techniques. First, a DAC splitting technique addresses the common-mode voltage matching …

Published in: IEEE Solid-State Circuits Letters
Page(s): 9 – 12
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3639322
Publisher: IEEE

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A 28-nm Digital Compute-in-Memory Ising Annealer With Asynchronous Random Number Generator for Traveling Salesman Problem

A 28-nm Digital Compute-in-Memory Ising Annealer With Asynchronous Random Number Generator for Traveling Salesman Problem 150 150
Author(s): Yuyao Kong, Haomei Liu, Vaidehi Garg, Shimeng Yu

Abstract:

This work presents a compact digital compute-in-memory (DCIM) Ising annealer targeting large-scale combinatorial optimization. A centroid-based weight mapping method combined with hierarchical clustering reduces the memory capacity required for traveling salesman problem (TSP) weights, enabling efficient mapping with limited on-chip storage. An asynchronous random number generator (ARNG) based on dual …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 4
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3639178
Publisher: IEEE

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A 112-Gb/s PAM4 Receiver With a Phase Equalization AFE in 7-nm FinFET

A 112-Gb/s PAM4 Receiver With a Phase Equalization AFE in 7-nm FinFET 150 150
Author(s): Huanan Guo, Yufeng Yao, Xiang Gao

Abstract:

To reduce the bit-error-rate (BER), equalizers are implemented in high-speed SerDes receivers (RX) to compensate for channel insertion loss and mitigate intersymbol interference (ISI). Conventional analog front-end (AFE) designs primarily focus on amplitude gain while neglecting the influence of phase shift. This brief presents a phase equalization (PEQ) AFE design …

Published in: IEEE Solid-State Circuits Letters
Page(s): 5 – 8
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3637833
Publisher: IEEE

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A High-Speed D-FF and a 11-Bit Up-Down Counter Using Unipolar Oxide TFTs on a Flexible Foil

A High-Speed D-FF and a 11-Bit Up-Down Counter Using Unipolar Oxide TFTs on a Flexible Foil 150 150
Author(s): Suyash Shrivastava, Pydi Ganga Bahubalindruni

Abstract:

This manuscript presents an experimental characterization of a novel high speed D flip-flop (D-FF). The circuit was fabricated on a $27\mu $ m thick flexible polyimide substrate using a nMOS only, single gate amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) technology. Reliable response of the D-FF was noticed from measurements up to …

Published in: IEEE Solid-State Circuits Letters
Page(s): 373 – 376
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3636192
Publisher: IEEE

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Advancing On-Cell Near-Field Monitoring for Thermal Runaway Detection in EV Batteries

Advancing On-Cell Near-Field Monitoring for Thermal Runaway Detection in EV Batteries 150 150
Author(s): Simon Foster, Scott Block, Daniel McMitchell, Edgar Colin-Beltran, Robert Dailey

Abstract:

A cell monitoring system for performance and safety enhancement is presented. It is the first commercially available single-chip-on-cell near-field contactless solution for automotive battery management, simplifying pack interconnect and reducing points of failure. This letter is a companion paper to the earlier ISSCC paper. It provides further details on the …

Published in: IEEE Solid-State Circuits Letters
Page(s): 369 – 372
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3634340
Publisher: IEEE

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