IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

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Design and analysis of a three-stream STT-MTJ TRNG with XOR and Majority Voter logic as post processing Architectures

Design and analysis of a three-stream STT-MTJ TRNG with XOR and Majority Voter logic as post processing Architectures 150 150
Author(s): M.Satwik Rai, Akshaja Kanugovi, Vinod Kumar Joshi

Abstract:

True Random Number Generators (TRNGs) are critical for hardware security, providing unpredictable entropy for cryptographic applications. Spin-Transfer Torque Magnetic Tunnel Junction (STT-MTJ) devices offer a promising entropy source due to their low power consumption, non-volatility, and stochastic switching behavior. This work presents a MTJ-based TRNG which produces three independent bit …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3671608
Publisher: IEEE

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Characterization and Modeling of Multilevel Analog ReRAM Synapses in the Sky130 Process

Characterization and Modeling of Multilevel Analog ReRAM Synapses in the Sky130 Process 150 150
Author(s): Irem Didin, Carl Brando, Ching-Yi Lin, Sahil Shah

Abstract:

Non-volatile memory devices play a key role in enabling energy-efficient computing. Among them, analog non-volatile memories such as Resistive Random Access Memory (ReRAM) offer high density and low power compared to conventional digital memories. However, their analog nature introduces device-level variability that impacts computational accuracy. This work presents the characterization …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3670667
Publisher: IEEE

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Special Topic on Modeling and Simulation of Emerging Materials, Devices, and Circuits for Energy-Efficient Computing

Special Topic on Modeling and Simulation of Emerging Materials, Devices, and Circuits for Energy-Efficient Computing 150 150
Author(s): Sumeet Gupta

Abstract:

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Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): iv – vi
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3662448
Publisher: IEEE

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Coupled Simulation Methodology for In-Memory Computing Systems

Coupled Simulation Methodology for In-Memory Computing Systems 150 150
Author(s): Daniel Schön, Christian Owusu-Afriyie, Quang Huy Nguyen, Rainer Leupers, Stephan Menzel, Melvin Galicia

Abstract:

Simulations for the development and optimization of future in-memory computing (IMC) systems often face the problem that the modeling of the large system is desired, but at the same time, the effects at the device level should also be taken into account. Such effects could be due to the material …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 18 – 26
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3652426
Publisher: IEEE

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Special Topic on Energy-Efficient In-/Near-Memory Computing With Emerging Devices

Special Topic on Energy-Efficient In-/Near-Memory Computing With Emerging Devices 150 150
Author(s): Jae-Sun Seo

Abstract:

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Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): v – vi
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3639836
Publisher: IEEE

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Special Topic on Challenges and Opportunities for Information Processing and Storage With Ferroelectric Devices and Circuits

Special Topic on Challenges and Opportunities for Information Processing and Storage With Ferroelectric Devices and Circuits 150 150
Author(s): Sourav Dutta

Abstract:

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Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): iii – iv
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3632984
Publisher: IEEE

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Antiferromagnetic Programmable Neuron: Structure, Training, and Pattern Recognition Applications

Antiferromagnetic Programmable Neuron: Structure, Training, and Pattern Recognition Applications 150 150
Author(s): I. Sotnyk, O. Prokopenko

Abstract:

Artificial neurons based on antiferromagnetic (AFM) spin Hall oscillators (SHOs) are promising elements for creating ultrafast, energy-efficient neuromorphic computing systems. These structures can generate picosecond spikes in response to dc and ac electric currents, thereby mimicking the reaction of biological neurons to an external stimulus. However, conventional AFM neurons have …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 9 – 17
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3633490
Publisher: IEEE

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Integrated Spatiotemporal Multiscale- Multiphysics-Uncertainty Simulation for Controlling Variability in RRAM Devices

Integrated Spatiotemporal Multiscale- Multiphysics-Uncertainty Simulation for Controlling Variability in RRAM Devices 150 150
Author(s): Ziyan Liao, Zhiheng Huang, Min Xiao, Yuezhong Meng, Hui Yan, Yang Liu

Abstract:

Resistive random access memory (RRAM) is a leading candidate for next-generation nonvolatile memory and neuromorphic computing. However, its performance is limited by inherent switching variability and uncertainties in spatiotemporal multiscale materials and processes. This study integrates multiphysics and multiscale modeling with uncertainty quantification (UQ) to systematically address these limitations and …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 1 – 8
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3633067
Publisher: IEEE

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Energy-Efficient Logic-in-Memory and Neuromorphic Computing in Raised Source and Drain MOSFETs

Energy-Efficient Logic-in-Memory and Neuromorphic Computing in Raised Source and Drain MOSFETs 150 150
Author(s): Md. Hasan Raza Ansari, Bashayr Alqahtani, Naveen Kumar, Vihar Georgiev, Nazek El-Atab

Abstract:

This work highlights the potential application of raised source and drain (RSD) MOSFETs-based charge trapping memory (CTM) for next-generation computing applications. This simulation study presents a double-gate (DG)-RSD MOSFET technology with a short gate length (50 nm) to significantly improve the performance of logic-in-memory (LIM) and neuromorphic computing (NC) systems. …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 197 – 204
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3630217
Publisher: IEEE

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