W band

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A Performance Comparison Between W-Band Sequential and Doherty Power Amplifiers for Power Back-Off Efficiency Improvement

A Performance Comparison Between W-Band Sequential and Doherty Power Amplifiers for Power Back-Off Efficiency Improvement 150 150
Author(s): Yahia Ibrahim, Ali M. Niknejad

Abstract:

This work presents a W-band sequential power amplifier (PA) featuring a compact and low-loss output combiner that enhances power back-off (PBO) efficiency by combining a main PA and an auxiliary PA through an isolated combining output network. The proposed architecture is analyzed and experimentally compared to the conventional Doherty PA (…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3708783
Publisher: IEEE

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A W-Band Active Bidirectional Phase Shifter With 2° RMS Phase Error Over 26.4% FBW Using Back-Gate Biasing in 28-nm FD-SOI CMOS

A W-Band Active Bidirectional Phase Shifter With 2° RMS Phase Error Over 26.4% FBW Using Back-Gate Biasing in 28-nm FD-SOI CMOS 150 150
Author(s): Sungwon Kwon, Byung-Wook Min

Abstract:

This article presents a W-band active bidirectional vector-sum phase shifter (Bi-VSPS) using a bidirectional phase-inverting variable-gain amplifier (Bi-PIVGA) with back-gate biasing in 28-nm fully depleted silicon-on-insulator (FD-SOI) CMOS. The Bi-PIVGA employs a neutralization technique that cancels the gate-to-drain capacitances of both active and inactive transistors in each signal direction. By …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3699765
Publisher: IEEE

View on IEEE Xplore

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