Voltage multipliers

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A CMOS Probabilistic Computing Chip With Hardware-Aware Learning

A CMOS Probabilistic Computing Chip With Hardware-Aware Learning 150 150
Author(s): Jinesh Jhonsa, William Whitehead, Yihao Wu, David Mccarthy, Shuvro Chowdhury, Kerem Y. Camsari, Luke Theogarajan

Abstract:

This work demonstrates a compact probabilistic computing system based on a physics-inspired probabilistic bit (p-bit) architecture with 440 interacting spins configured in a chimera graph and occupying 0.44 mm2 of silicon area. Area efficiency is achieved through a current-mode neuron update circuit and a mixed-signal design approach that integrates pitch-matched standard-cell analog …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 86 – 94
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3689506
Publisher: IEEE

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A 550-μW Capacitor-Assisted Transformer-Based VCO Achieving 204-dBc/Hz FoMA at 1-MHz Frequency Offset

A 550-μW Capacitor-Assisted Transformer-Based VCO Achieving 204-dBc/Hz FoMA at 1-MHz Frequency Offset 150 150
Author(s): Teng-Shen Yang, Liang-Hung Lu

Abstract:

This letter presents a capacitor-assisted transformer (CTF)-based voltage-controlled oscillator (VCO) that achieves a low flicker-noise corner with submilliwatt power consumption and compact chip area. By introducing a small assisting capacitor into the transformer, the higher order tank impedance is reshaped from the second-resonance region toward the third-resonance region, resulting …

Published in: IEEE Solid-State Circuits Letters
Page(s): 150 – 153
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3690818
Publisher: IEEE

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HyFPCiM: A 65-nm 417-μW Error-Sensitivity-Aware FP8 Compute-in-Memory Macro

HyFPCiM: A 65-nm 417-μW Error-Sensitivity-Aware FP8 Compute-in-Memory Macro 150 150
Author(s): Gaurav Kumar K, Yatharth Agarwal, Kaushik Roy

Abstract:

This letter presents HyFPCiM, a 65-nm FP8 compute-in-memory (CiM) macro that enables sub-mW floating-point (FP) inference using error-sensitivity-aware FP partitioning (EAP). EAP maps exponent processing to a digital CiM (DCiM) path and mantissa accumulation to an analog CiM (ACiM), avoiding the power- and area-intensive adder-tree-based accumulation used in prior FP-CiM …

Published in: IEEE Solid-State Circuits Letters
Page(s): 146 – 149
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3688988
Publisher: IEEE

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A 28-nm System-in-One-Macro Computing-in-Memory Chip Utilizing Leakage-Eliminated 2T1C and Capacitor-Over-Logic 1T1C eDRAM

A 28-nm System-in-One-Macro Computing-in-Memory Chip Utilizing Leakage-Eliminated 2T1C and Capacitor-Over-Logic 1T1C eDRAM 150 150
Author(s): Zhihang Qian, Zhaori Cong, Shengzhe Yan, Zeyu Guo, Zhuoyu Dai, Yifan He, Wenyu Sun, Chunmeng Dou, Feng Zhang, Di Geng, Jinshan Yue, Yongpan Liu, Qi Liu, Ming Liu

Abstract:

Computing-in-memory (CIM) is a promising paradigm for energy- and area-efficient implementation of the heavy general matrix multiplication (GEMM) operations, especially in the evolving deep learning algorithms. Though existing CIM macros have demonstrated remarkable energy/area efficiency, the corresponding metrics of the system-level CIM chips degrade due to the peripheral components, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3684971
Publisher: IEEE

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A 16-MHz CMOS RC Frequency Reference Achieving Accuracies of ±125 ppm From −40 °C to 85 °C and −560/+580 ppm After Accelerated Aging

A 16-MHz CMOS RC Frequency Reference Achieving Accuracies of ±125 ppm From −40 °C to 85 °C and −560/+580 ppm After Accelerated Aging 150 150
Author(s): Runtao Huo, Weihao Jie, Yiwen Zhang, Honglan Jiang, Hui Wang

Abstract:

This article presents a low-power, high-accuracy CMOS RC frequency reference featuring a capacitively modulated RC time constant (CMT) generation and a die-to-die error removal (DDER) technique for precise frequency generation with a low-calibration cost. Unlike resistive trimming, the temperature dependence of the on-chip resistor is compensated by a $\Delta \Sigma $ …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3684094
Publisher: IEEE

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A 6.78-MHz Single-Stage Regulating Rectifier With Dual Outputs Simultaneously Charged in a Half Cycle Achieving 92.2% Efficiency and 131 mW Output Power

A 6.78-MHz Single-Stage Regulating Rectifier With Dual Outputs Simultaneously Charged in a Half Cycle Achieving 92.2% Efficiency and 131 mW Output Power 150 150
Author(s): Quanrong Zhuang, Junyi Sun, Bo Li, Jie Lu, Zixu Wang, Qi’an Zhu, Xin Zhang, Yi Shi, Hao Qiu

Abstract:

Targeting the wireless power transfer (WPT) to implantable medical devices (IMDs), this work presents a 6.78 MHz single-stage dual-output (SSDO) regulating rectifier. It can support the simultaneous charging of both outputs ( $V_{\text {OUT1}}$ and $V_{\text {OUT2}}$ , $V_{\text {OUT1}} \gt V_{\text {OUT2}}$ ) in a half cycle, rather than …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3682308
Publisher: IEEE

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An 800-MS/s 13-b 2× TI Pipelined-SAR ADC With Rapid Digital Amplification

An 800-MS/s 13-b 2× TI Pipelined-SAR ADC With Rapid Digital Amplification 150 150
Author(s): Peizhe Li, Danfeng Zhai, Qi Liu, Chixiao Chen

Abstract:

This work proposes a rapid digital amplification (RDA) with residue-aware reference, offering an equivalent open-loop (OL) gain enhancement of 25 dB and reducing the interstage gain error (ISGE)-induced SNR degradation by 20 dB, with an extra amplification latency of only 200 ps. It is implemented in an 800-MS/s 13-b two-way time-interleaved (…

Published in: IEEE Solid-State Circuits Letters
Page(s): 137 – 140
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3684735
Publisher: IEEE

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An Ultralow Cross-Regulation Single-Inductor Multiple-Output (SIMO) Buck Converter Using Reordered Power-Distributive Control

An Ultralow Cross-Regulation Single-Inductor Multiple-Output (SIMO) Buck Converter Using Reordered Power-Distributive Control 150 150
Author(s): Baochuang Wang, Xiaonan Wu, Minghao Shang, Lin Cheng

Abstract:

A single-inductor multiple-output (SIMO) buck converter employing reordered power-distributive control (RPDC) is presented to achieve ultralow cross regulation. Adedicated power-distribution controller implements RPDC by adaptively adjusting the switching sequence: when the inductor current is insufficient, the switching period is extended, and when excessive, an end phase in the form of …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3680424
Publisher: IEEE

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A Multiband Ultralow-Power Transceiver With Two-Step Wake-Up Reception

A Multiband Ultralow-Power Transceiver With Two-Step Wake-Up Reception 150 150
Author(s): Thinh Tran-Dinh, Hafiz Usman Mahmood, Jinglong Xu, Keun-Mok Kim, Kyung-Sik Choi, Jaeheon Lee, Jinho Ko, Sang-Gug Lee, Jusung Kim

Abstract:

This letter presents a multiband fully integrated ultralow-power (ULP) transceiver with a two-step wake-up receiver (WuRX) and switched-capacitor (SC)-based high-efficiency transmitter. Operating from 200 MHz to 1 GHz, the transceiver covers most IoT applications on a single chip. By employing a novel two-step wake-up scheme with a rotating correlator, the proposed …

Published in: IEEE Solid-State Circuits Letters
Page(s): 133 – 136
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3681917
Publisher: IEEE

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