Transceivers

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A 12-Gb/s Source-Synchronous Single-Ended PAM-4 Transceiver With Background Adaptive Crosstalk Equalization in 28-nm CMOS

A 12-Gb/s Source-Synchronous Single-Ended PAM-4 Transceiver With Background Adaptive Crosstalk Equalization in 28-nm CMOS 150 150
Author(s): DongArm Shin, Kuy Youn Chung, Sihoon Yang, SeongHwan Cho

Abstract:

This article presents a background adaptive crosstalk (XT) equalization technique for a single-endedfour-level pulse amplitude modulation (PAM-4) interface to maintain accurate XT cancellation (XTC) under environmental variations. A least-mean-square (LMS) adaptation loop adjusts the XT equalizer using a source-synchronous clock as an aggressor reference uncorrelated with the victim. At the …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3712021
Publisher: IEEE

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An 18.4-Gb/s/pin Simultaneous Bidirectional Transceiver for Post HBM4 Using Four-Phase Hybrid Timing Alignment and Dual Equalization

An 18.4-Gb/s/pin Simultaneous Bidirectional Transceiver for Post HBM4 Using Four-Phase Hybrid Timing Alignment and Dual Equalization 150 150
Author(s): Minchang Kim, Hankyu Chi, Sooncheol Kwon, Icsu Oh, Seulgi Kim, Heewoong Song, Daeho Yun, Jaehong Jeong, Daejoon Kim, Kichul Hong, Jeonghyun Park, Woo-Seok Choi, Hae-Kang Jung, Hoyoung Son, Inchul Jeong, Hyungsoo Kim, Jonghwan Kim

Abstract:

This letter presents a simultaneous bidirectional (SBD) transceiver for post HBM4. It is difficult to increase the data rate due to poor channel characteristics of the silicon interposer and the limited physical area of the IO in high-bandwidth memory (HBM) interface. SBD signaling is attractive because it doubles the per-pin …

Published in: IEEE Solid-State Circuits Letters
Page(s): 182 – 185
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3696268
Publisher: IEEE

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A 27-Gb/s/pin Inverter-Based Delay-Matched PAM-3 Transceiver With Pattern-Selective Switching Jitter Compensation for Die-to-Die Interfaces

A 27-Gb/s/pin Inverter-Based Delay-Matched PAM-3 Transceiver With Pattern-Selective Switching Jitter Compensation for Die-to-Die Interfaces 150 150
Author(s): Changmin Sim, Seongcheol Kim, Seungwoo Park, Junseob So, Hwaseok Shin, Taehwan Kim, Seon-Been Lee, Minkyun Shim, Chulwoo Kim

Abstract:

This article presents a 27-Gb/s/pin inverter-based delay-matched three-level pulse amplitude modulation (PAM-3) transceiver for short-reach die-to-die (D2D) interfaces. The proposed design uses two parallel, identical offset-programmable transimpedance amplifiers (TIAs) to independently generate two finely tunable PAM-3 reference levels with minimal parasitic loading, enabling multi-level signaling within a …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 17
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3706449
Publisher: IEEE

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Modern Wireline Transceivers

Modern Wireline Transceivers 150 150
Author(s): Tony Chan Carusone, Timothy O. Dickson, Samuel Palermo, Sudip Shekhar, Mozhgan Mansuri

Abstract:

Over the past two decades, ever-increasing network bandwidth (BW) demands in data centers and high-performance computing systems have fueled exponential growth in per-lane serial link data rates. To keep up with this demand and enable faster communication over BW-limited electrical channels, wireline transceiver architectures and circuit topologies have rapidly evolved …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 395 – 422
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3642231
Publisher: IEEE

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A Ka-Band Time-Modulated Phase-Invariant Variable-Gain Amplifier With 30-dB Gain Tuning Based on Duty-Cycle Control

A Ka-Band Time-Modulated Phase-Invariant Variable-Gain Amplifier With 30-dB Gain Tuning Based on Duty-Cycle Control 150 150
Author(s): Dongfan Xu, Minzhe Tang, Haiyun Gu, Yuxuan Liu, Yilun Chen, Ziyuan Ren, Minghao Fan, Daxu Zhang, Yi Zhang, Duo Li, Zheng Li, Zezheng Liu, Chun Wang, Yudai Yamazaki, Yuncheng Zhang, Kazuaki Kunihiro, Hiroyuki Sakai, Atsushi Shirane, Kenichi Okada

Abstract:

This article presents a time-modulated variable-gain amplifier (VGA) employing a clock-sampling topology governed by a duty-cycle control (DCC) loop. By modulating the effective operation time of the amplifier rather than altering its RF bias conditions, for precise tuning of the clock duty cycle, enabling phase consistency at millimeter-wave frequencies. The …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3695362
Publisher: IEEE

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A 142–164-GHz Phased-Array AiP Module With High-Power-Density and High-Efficiency Transceiver in 65-nm CMOS for 6G UE

A 142–164-GHz Phased-Array AiP Module With High-Power-Density and High-Efficiency Transceiver in 65-nm CMOS for 6G UE 150 150
Author(s): Yudai Yamazaki, Yohei Morishita, Sunghwan Park, Takaya Uchino, Chenxin Liu, Jun Sakamaki, Akihiro Egami, Ryosuke Hasaba, Ken Takahashi, Tomoki Abe, Tomohiro Murata, Yoichi Nakagawa, Takashi Tomura, Hiroshi Taneda, Kei Murayama, Makoto Tsukahara, Hiroko Ota, Yoko Nakabayashi, Ryuji Kinugawa, Takumi Kojima, Anyi Tian, Kotaro Ito, Chun Wang, Hans Herdian, Yi Zhang, Zheng Li, Wenqian Wang, Hongye Huang, Dingxin Xu, Sena Kato, Michihiro Ide, Shinsuke Hara, Issei Watanabe, Akifumi Kasamatsu, Yuncheng Zhang, Hiroyuki Sakai, Kazuaki Kunihiro, Atsushi Shirane, Koji Takinami, Kenichi Okada

Abstract:

This work presents a D-band high-power-density four-element phased-array transceiver for 6G user equipment (UE). Conventional designs require large multi-stage LO generation circuits for D-band up/down conversion, making it difficult to achieve compact size and low-power consumption. To address this, we propose an integrated LO chain using an injection-locked tripling …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1275 – 1293
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3665184
Publisher: IEEE

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Sub-Terahertz Wideband ASK Transceiver for 14/27/64 Gb/s 0.27-km/0.12-m/0.1-mm Interconnection in 28-nm CMOS

Sub-Terahertz Wideband ASK Transceiver for 14/27/64 Gb/s 0.27-km/0.12-m/0.1-mm Interconnection in 28-nm CMOS 150 150
Author(s): Dawei Tang, Xiaoyue Xia, Leyang Huang, Zekun Li, Chun Yang, Zheng Yan, Si-Yuan Tang, Peigen Zhou, Rui Zhang, Liqun Lu, Wentao Zhu, Zhe Chen, Jixin Chen, Hao Gao, Wei Hong

Abstract:

This article presents a 28-nm CMOS sub-terahertz (sub-THz) amplitude shift-keying (ASK) transceiver achieving competitive wireless and wireline communication performance. The over-the-air (OTA) link demonstrates 14 Gb/s/0.27 km, 16Gb/s/1m, and 27 Gb/s/12 cm without equalization (EQ), while supporting 64 Gb/s on-Off keying (OOK) and 40 Gb/s pulse amplitude modulation (…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 17
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3665552
Publisher: IEEE

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A 56-Gb/s Hybrid Silicon Photonic and 5-nm CMOS 3-D-Integrated Transceiver for Optical Compute I/O

A 56-Gb/s Hybrid Silicon Photonic and 5-nm CMOS 3-D-Integrated Transceiver for Optical Compute I/O 150 150
Author(s): Ganesh Balamurugan, Parmanand Mishra, Subal Sahni, Ankur Aggarwal, Simon Forey, Andrew Gimlett, Prateek Goyal, Han Hao, Santosh Hariwan, Masum Hossain, Sejun Jeon, Narayan Kaniyur, David Lazovsky, Wonho Lee, Bengt Littmann, Raj Nagulapalli, Kevin Park, John Rollinson, Matteo Staffaroni, Prakash Thakur, Saurabh Vats, Preet Virk, Dehua Xiao, Hemesh Yasotharan, Raman Yazdani, Waleed Younis, Shifeng Yu, Phil Winterbottom

Abstract:

This work presents a hybrid 3-D-integrated silicon photonic (SiPh) transceiver suitable for realizing chiplet-based optical I/O in future AI/ML ASIC packages. The optical transceiver die stack is composed of two ICs: a SiPh IC (PIC) with micrometer-scale, thermally robust electro-absorption modulators (EAMs), and a 5-nm CMOS electronic IC (…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3655295
Publisher: IEEE

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A 0.29 pJ/b 5.27 Tb/s/mm UCIe Advanced Package Link With 2.5-D CoWoS Interposer and a 0.52 pJ/b 0.448 Tb/s/mm UCIe Standard Package Link With Organic Substrate in 3 nm FinFET

A 0.29 pJ/b 5.27 Tb/s/mm UCIe Advanced Package Link With 2.5-D CoWoS Interposer and a 0.52 pJ/b 0.448 Tb/s/mm UCIe Standard Package Link With Organic Substrate in 3 nm FinFET 150 150
Author(s): Didem Turker Melek, James Vandersand, R. Navin Kumar, Pyare M. Sarkar, Prakash BS, Adrian Leuciuc, Kevin Geary, Shaojun Ma, Chirag M. Mehta, Basant Bothra, Shashi Jain, Pawan Sabharwal, Ranjan Vaish, Kirti Bhanushali, Yutong Ding, Craig Frost, John Annunziata, Krishanu Sadhu, Dimitris Kyritsis, Jeff Bostak, Ming Li, Steve Williams, Ken Chang

Abstract:

This work presents two die-to-die (D2D) wireline transceivers, one compliant with the UCIe advanced package (UCIe-AP) and the other with the UCIe standard package (UCIe-SP) standard, developed in 3 nm FinFET. The Universal Chiplet interconnect express (UCIe)-AP link has 64 RX and 64 TX data lanes in one PHY module and …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3651425
Publisher: IEEE

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