Transceivers

A 64-Gb/s/pin 0.25-pJ/b Single-Ended Short-Reach PAM4 Transceiver in 28-nm CMOS

A 64-Gb/s/pin 0.25-pJ/b Single-Ended Short-Reach PAM4 Transceiver in 28-nm CMOS 150 150

Abstract:

We present a transceiver architecture for single-ended PAM4 signaling, introducing an inverter-based active-inductor-terminated front end that obviates the need for further equalizer stages, substantially reducing power and area. Realized in 28-nm CMOS technology, the four-lane link operates at 64 Gb/s/pin with a bit error rate (BER) less than $10{^{-12}}$ …

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A 12-Gb/s Source-Synchronous Single-Ended PAM-4 Transceiver With Background Adaptive Crosstalk Equalization in 28-nm CMOS

A 12-Gb/s Source-Synchronous Single-Ended PAM-4 Transceiver With Background Adaptive Crosstalk Equalization in 28-nm CMOS 150 150

Abstract:

This article presents a background adaptive crosstalk (XT) equalization technique for a single-endedfour-level pulse amplitude modulation (PAM-4) interface to maintain accurate XT cancellation (XTC) under environmental variations. A least-mean-square (LMS) adaptation loop adjusts the XT equalizer using a source-synchronous clock as an aggressor reference uncorrelated with the victim. At the …

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An 18.4-Gb/s/pin Simultaneous Bidirectional Transceiver for Post HBM4 Using Four-Phase Hybrid Timing Alignment and Dual Equalization

An 18.4-Gb/s/pin Simultaneous Bidirectional Transceiver for Post HBM4 Using Four-Phase Hybrid Timing Alignment and Dual Equalization 150 150

Abstract:

This letter presents a simultaneous bidirectional (SBD) transceiver for post HBM4. It is difficult to increase the data rate due to poor channel characteristics of the silicon interposer and the limited physical area of the IO in high-bandwidth memory (HBM) interface. SBD signaling is attractive because it doubles the per-pin …

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A 27-Gb/s/pin Inverter-Based Delay-Matched PAM-3 Transceiver With Pattern-Selective Switching Jitter Compensation for Die-to-Die Interfaces

A 27-Gb/s/pin Inverter-Based Delay-Matched PAM-3 Transceiver With Pattern-Selective Switching Jitter Compensation for Die-to-Die Interfaces 150 150

Abstract:

This article presents a 27-Gb/s/pin inverter-based delay-matched three-level pulse amplitude modulation (PAM-3) transceiver for short-reach die-to-die (D2D) interfaces. The proposed design uses two parallel, identical offset-programmable transimpedance amplifiers (TIAs) to independently generate two finely tunable PAM-3 reference levels with minimal parasitic loading, enabling multi-level signaling within a …

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Modern Wireline Transceivers

Modern Wireline Transceivers 150 150

Abstract:

Over the past two decades, ever-increasing network bandwidth (BW) demands in data centers and high-performance computing systems have fueled exponential growth in per-lane serial link data rates. To keep up with this demand and enable faster communication over BW-limited electrical channels, wireline transceiver architectures and circuit topologies have rapidly evolved …

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A Ka-Band Time-Modulated Phase-Invariant Variable-Gain Amplifier With 30-dB Gain Tuning Based on Duty-Cycle Control

A Ka-Band Time-Modulated Phase-Invariant Variable-Gain Amplifier With 30-dB Gain Tuning Based on Duty-Cycle Control 150 150

Abstract:

This article presents a time-modulated variable-gain amplifier (VGA) employing a clock-sampling topology governed by a duty-cycle control (DCC) loop. By modulating the effective operation time of the amplifier rather than altering its RF bias conditions, for precise tuning of the clock duty cycle, enabling phase consistency at millimeter-wave frequencies. The …

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A 142–164-GHz Phased-Array AiP Module With High-Power-Density and High-Efficiency Transceiver in 65-nm CMOS for 6G UE

A 142–164-GHz Phased-Array AiP Module With High-Power-Density and High-Efficiency Transceiver in 65-nm CMOS for 6G UE 150 150

Abstract:

This work presents a D-band high-power-density four-element phased-array transceiver for 6G user equipment (UE). Conventional designs require large multi-stage LO generation circuits for D-band up/down conversion, making it difficult to achieve compact size and low-power consumption. To address this, we propose an integrated LO chain using an injection-locked tripling …

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Sub-Terahertz Wideband ASK Transceiver for 14/27/64 Gb/s 0.27-km/0.12-m/0.1-mm Interconnection in 28-nm CMOS

Sub-Terahertz Wideband ASK Transceiver for 14/27/64 Gb/s 0.27-km/0.12-m/0.1-mm Interconnection in 28-nm CMOS 150 150

Abstract:

This article presents a 28-nm CMOS sub-terahertz (sub-THz) amplitude shift-keying (ASK) transceiver achieving competitive wireless and wireline communication performance. The over-the-air (OTA) link demonstrates 14 Gb/s/0.27 km, 16Gb/s/1m, and 27 Gb/s/12 cm without equalization (EQ), while supporting 64 Gb/s on-Off keying (OOK) and 40 Gb/s pulse amplitude modulation (…

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A 56-Gb/s Hybrid Silicon Photonic and 5-nm CMOS 3-D-Integrated Transceiver for Optical Compute I/O

A 56-Gb/s Hybrid Silicon Photonic and 5-nm CMOS 3-D-Integrated Transceiver for Optical Compute I/O 150 150

Abstract:

This work presents a hybrid 3-D-integrated silicon photonic (SiPh) transceiver suitable for realizing chiplet-based optical I/O in future AI/ML ASIC packages. The optical transceiver die stack is composed of two ICs: a SiPh IC (PIC) with micrometer-scale, thermally robust electro-absorption modulators (EAMs), and a 5-nm CMOS electronic IC (…

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