time domain (TD)

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A 28-nm PVT Inner-Tracking Time-Domain Compute-In-Memory Macro for Edge-AI Devices

A 28-nm PVT Inner-Tracking Time-Domain Compute-In-Memory Macro for Edge-AI Devices 150 150
Author(s): Yuanzhe Zhao, Yuheng Wang, Heng Xie, Zijian Wang, Rui P. Martins, Chi-Hang Chan, Minglei Zhang

Abstract:

This article presents an energy-efficient and process-, voltage-, and temperature (PVT)-robust time-domain (TD) compute-in-memory (CIM) macro for edge artificial intelligence (AI) devices. It features: 1) a PVT inner-tracking (PIT) technique that aligns the PVT responses of TD computation and TD quantization, delivering inherent robustness without incurring extra power or circuit …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3691189
Publisher: IEEE

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A 40-GS/s 8-bit Time-Interleaved ADC Featuring SFDR-Enhanced Sampling and Power-Efficient Time-Domain Quantization in 28-nm CMOS

A 40-GS/s 8-bit Time-Interleaved ADC Featuring SFDR-Enhanced Sampling and Power-Efficient Time-Domain Quantization in 28-nm CMOS 150 150
Author(s): Chenghao Zhang, Maliang Liu, Yuan Chang, Yihang Yang, Jinhai Xiao, Yintang Yang, Yong Chen

Abstract:

This article reports a 40-GS/s 8-bit time-interleaved (TI) time-domain (TD) gated-ring-oscillator analog-to-digital converter (GRO-ADC). An interleaving number of 32 is achieved with a single-channel 8-bit GRO-ADC operating at 1.25 GS/s, leading to a low front-end design complexity compared to recently published arts. The sampling front end employs a linearity-enhanced boosted …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1907 – 1920
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3671459
Publisher: IEEE

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