Thermal stability

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A 0.4-V 32-kHz Pulse-Injection Temperature-Compensated Crystal Oscillator With Sub-Cycle CL Modulation and DLL-Reused Temperature Sensor

A 0.4-V 32-kHz Pulse-Injection Temperature-Compensated Crystal Oscillator With Sub-Cycle CL Modulation and DLL-Reused Temperature Sensor 150 150
Author(s): Haihua Li, Pui-In Mak, Rui P. Martins, Ka-Meng Lei

Abstract:

This article presents a 0.4-V 32 kHz pulse-injection (PI) temperature-compensated crystal oscillator (TCXO) that incorporates subcycle capacitive load ( $C_{\text {L}}$ ) modulation for frequency compensation. The proposed TCXO compensates for the crystal’s frequency deviation ( $\Delta f$ ) by dynamically adjusting the enabling duration of the additional $C_{\text {L}}$ within each …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3620824
Publisher: IEEE

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Comprehensive Device to System Co-Design for SOT-MRAM at the 7 nm Node

Comprehensive Device to System Co-Design for SOT-MRAM at the 7 nm Node 150 150
Author(s): Piyush Kumar, Da Eun Shim, Azad Naeemi

Abstract:

This work presents a comprehensive spin-orbit torque (SOT)-based magnetic random access memory (MRAM) design at the 7 nm technology node, spanning from device-level characteristics to system-level power performance area (PPA). At the device level, we show the tradeoffs among the write current, error rate, and time, based on mircomagnetic simulations. …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 139 – 147
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3621279
Publisher: IEEE

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An Investigation of Minimum Supply Voltage of 5-nm SRAM From 300 K Down to 10 K

An Investigation of Minimum Supply Voltage of 5-nm SRAM From 300 K Down to 10 K 150 150
Author(s): Hafeez Raza, Shivendra Singh Parihar, Yogesh Singh Chauhan, Hussam Amrouch, Avinash Lahgere

Abstract:

In this article, we present a comprehensive study of the impact of cryogenic temperatures on the minimum operating voltage ( $V_{\min }$ ) of 5-nm Fin Field-Effect Transistors (FinFETs)-based Static Random Access Memory (SRAM) cells. To perform the SRAM $V_{\min }$ evaluation, we have measured the FinFETs fabricated using a commercial 5…

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 42 – 50
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3560215
Publisher: IEEE

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