Temperature

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A 6.9-ppm/°C, 0.66-mV/V Line Regulation, 50-mA Multi-Loop Low-Dropout Regulator With Integrated Single-BJT Voltage and Current References

A 6.9-ppm/°C, 0.66-mV/V Line Regulation, 50-mA Multi-Loop Low-Dropout Regulator With Integrated Single-BJT Voltage and Current References 150 150
Author(s): Raghav Bansal, Shouri Chatterjee

Abstract:

This article presents a fully integrated output-capacitor-less (OCL) multi-feedback-loop low-dropout regulator (LDO) with an in-built single bipolar junction transistor (BJT)-based voltage and current reference (VCR) for energy-harvesting Internet of Things (IoT) devices. The proposed architecture comprises four loops, which significantly enhance the DC regulation and transient performance of the …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 17
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3694415
Publisher: IEEE

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A Cryogenic Superconducting Quantum Computing Unit Interface Chipset With Phase-Detection-Based Readout and Phase-Shifter-Based Controller

A Cryogenic Superconducting Quantum Computing Unit Interface Chipset With Phase-Detection-Based Readout and Phase-Shifter-Based Controller 150 150
Author(s): Yanshu Guo, Yaoyu Li, Wenqiang Huang, Tian Tian, Nan Wu, Siqi Zhang, Qichun Liu, Tiefu Li, Zhihua Wang, Ning Deng, Yuanjin Zheng, Hanjun Jiang

Abstract:

This article presents a cryogenic quantum interface chipset at 3.5 K for superconducting transmon qubit operations. The chipset comprises a phase-detection readout and a phase-shifter-based polar-modulation controller with flexible scalability. With the proposed phase-detection readout scheme, a 9-bit time-to-digital converter (TDC)-based state detector is used to read out the qubit …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 18
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3695612
Publisher: IEEE

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A High-Linearity Shunt-Based In-Line Current Sensor With Self-Heating Compensation and 14.4 V 2 MHz PWM Rejection

A High-Linearity Shunt-Based In-Line Current Sensor With Self-Heating Compensation and 14.4 V 2 MHz PWM Rejection 150 150
Author(s): Heng Ma, Huajun Zhang, Yuyan Liu, Marco Berkhout, Qinwen Fan

Abstract:

This article presents a cost-effective, fully integrated shunt-resistor-based in-line current sensor that delivers high linearity and strong PWM rejection, enabling precise current measurement and control in dynamic driving systems like robotics, imaging, and audio. To mitigate the self-heating of the on-chip shunt resistor, which degrades linearity, a location-based thermal compensation …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3685735
Publisher: IEEE

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A 14-b Energy-Efficient BW/Power Scalable CTDSM With a Frequency-Controlled Current Source

A 14-b Energy-Efficient BW/Power Scalable CTDSM With a Frequency-Controlled Current Source 150 150
Author(s): Xinjie Wu, Xiaopeng Yu, Nick Nianxiong Tan, Zhong Tang

Abstract:

This work presents a 14-bit energy-efficient bandwidth (BW)/power scalable continuous-time delta–sigma modulator (CTDSM) for sensor interfaces in IoT applications. To ensure low noise for small input signals and achieve BW/power scalability, it is built around Gm-C integrators biased via a linear frequency-controlled current source (FCCS). The FCCS …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 10
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3621527
Publisher: IEEE

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CFET Beyond 3 nm: SRAM Reliability Under Design-Time and Run-Time Variability

CFET Beyond 3 nm: SRAM Reliability Under Design-Time and Run-Time Variability 150 150
Author(s): Sufia Shahin, Swati Deshwal, Anirban Kar, Mahdi Benkhelifa, Yogesh S. Chauhan, Hussam Amrouch

Abstract:

This work investigates the reliability of complementary field-effect transistors (CFETs) by addressing both design-time variability arising from process variations and run-time variability due to temperature and aging effects. A rigorously calibrated TCAD model, validated against experimental CFET data, is employed to quantify the impact of metal gate granularity (MGG)-induced …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 51 – 59
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3568622
Publisher: IEEE

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