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A 14-b Energy-Efficient BW/Power Scalable CTDSM With a Frequency-Controlled Current Source

A 14-b Energy-Efficient BW/Power Scalable CTDSM With a Frequency-Controlled Current Source 150 150
Author(s): Xinjie Wu, Xiaopeng Yu, Nick Nianxiong Tan, Zhong Tang

Abstract:

This work presents a 14-bit energy-efficient bandwidth (BW)/power scalable continuous-time delta–sigma modulator (CTDSM) for sensor interfaces in IoT applications. To ensure low noise for small input signals and achieve BW/power scalability, it is built around Gm-C integrators biased via a linear frequency-controlled current source (FCCS). The FCCS …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 10
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3621527
Publisher: IEEE

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CFET Beyond 3 nm: SRAM Reliability Under Design-Time and Run-Time Variability

CFET Beyond 3 nm: SRAM Reliability Under Design-Time and Run-Time Variability 150 150
Author(s): Sufia Shahin, Swati Deshwal, Anirban Kar, Mahdi Benkhelifa, Yogesh S. Chauhan, Hussam Amrouch

Abstract:

This work investigates the reliability of complementary field-effect transistors (CFETs) by addressing both design-time variability arising from process variations and run-time variability due to temperature and aging effects. A rigorously calibrated TCAD model, validated against experimental CFET data, is employed to quantify the impact of metal gate granularity (MGG)-induced …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 51 – 59
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3568622
Publisher: IEEE

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