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MixCIM: A Hybrid Computing-in-Memory Macro With Less Data-Movement and Better Memory-Reuse for Depthwise Separable Neural Networks

MixCIM: A Hybrid Computing-in-Memory Macro With Less Data-Movement and Better Memory-Reuse for Depthwise Separable Neural Networks 150 150
Author(s): Xin Qiao, Youming Yang, Jiahao Song, Renjie Wei, Xiyuan Tang, Meng Li, Runsheng Wang, Yuan Wang

Abstract:

Computing-in-memory (CIM) architectures have demonstrated strong potential for edge artificial intelligence (AI) devices due to their enhanced parallelism and energy efficiency. With the growing complexity of AI tasks and the rapid increase in model size, computation and deployment costs have surged. Depthwise separable neural networks (DSNNs) have attracted interest for …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3651775
Publisher: IEEE

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A 1×32 TDC Array With 0.056% Pixel-to-Pixel Variation Using a Global Timer Architecture for LiDAR Applications

A 1×32 TDC Array With 0.056% Pixel-to-Pixel Variation Using a Global Timer Architecture for LiDAR Applications 150 150
Author(s): Hsi-Hao Huang, Zong-Rui Cao, Ying-Ying Cheng, Jia-Yu Lin, Chen-Yi Lee

Abstract:

This letter presents a low pixel-to-pixel variation (PPV) time-to-digital converter (TDC) array designed for light detection and ranging (LiDAR) applications. The TDC array is implemented in a 0.18 μm HV CMOS process, integrated with a single-photon avalanche diode (SPAD) array. SPAD-based LiDAR systems require high-precision timing resolution across the entire sensing …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3652323
Publisher: IEEE

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A 0.015-mm2 0.5-V Synthesizable Hybrid PLL With Multi-Phase Linear Proportional-Gain Paths

A 0.015-mm2 0.5-V Synthesizable Hybrid PLL With Multi-Phase Linear Proportional-Gain Paths 150 150
Author(s): Qibang Sun, Liqun Feng, Woogeun Rhee, Hanjun Jiang

Abstract:

This brief presents a 0.015-mm2 0.5-V synthesizable hybrid phase locked loop (PLL). All blocks including an analog proportional-gain path can be logically or physically synthesized with digital cells and hardware languages. To mitigate the mismatch and common-mode fluctuation problems of a voltage-mode phase detector, multi-phase proportional-gain paths are designed for …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3649215
Publisher: IEEE

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Impact of Aging, Self-Heating, and Parasitics Effects on NSFET and CFET

Impact of Aging, Self-Heating, and Parasitics Effects on NSFET and CFET 150 150
Author(s): Swati Deshwal, Sufia Shahin, Anirban Kar, Yogesh S. Chauhan, Hussam Amrouch

Abstract:

This work presents a comparative analysis of complementary field-effect transistor (CFET) and nanosheet FET (NSFET) architectures, with a focus on self-heating effects (SHEs), negative bias temperature instability (NBTI), hot carrier degradation (HCD), and the impact of back-end-of-line (BEOL) parasitics on standard cell performance. NBTI degradation is modeled using a framework …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 188 – 196
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3624653
Publisher: IEEE

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1.58-b FeFET-Based Ternary Neural Networks: Achieving Robust Compute-In-Memory With Weight-Input Transformations

1.58-b FeFET-Based Ternary Neural Networks: Achieving Robust Compute-In-Memory With Weight-Input Transformations 150 150
Author(s): Imtiaz Ahmed, Akul Malhotra, Revanth Koduru, Sumeet Kumar Gupta

Abstract:

Ternary weight neural networks (TWNs), with weights quantized to three states (−1, 0, and 1), have emerged as promising solutions for resource-constrained edge artificial intelligence (AI) platforms due to their high energy efficiency with acceptable inference accuracy. Further energy savings can be achieved with TWN accelerators utilizing techniques such as compute-in-memory (CiM) and …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 157 – 165
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3621160
Publisher: IEEE

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A Machine Learning-Inspired PAM-4 Transceiver for Medium-Reach Wireline Links

A Machine Learning-Inspired PAM-4 Transceiver for Medium-Reach Wireline Links 150 150
Author(s): Ramin Javadi, Tejasvi Anand

Abstract:

This article presents an energy-efficient machine learning-inspired PAM-4 wireline transceiver that leverages data encoding at the transmitter (Tx) and feature extraction with classification at the receiver (Rx) to compensate for channel loss ranging from 13 to 26 dB, while maintaining the bit error rate (BER)<10-11. A new consecutive symbol-to-center (CSC) encoding …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3616072
Publisher: IEEE

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Beyond Backside Power: Backside Signal Routing as Technology Booster for Standard-Cell Scaling

Beyond Backside Power: Backside Signal Routing as Technology Booster for Standard-Cell Scaling 150 150
Author(s): Anup Ashok Kedilaya, Sirish Oruganti, Nishant Gupta, Xiuhao Zhang, Ilya Karpov, Mark A. Anders, Jaydeep P. Kulkarni

Abstract:

Advances in process technology enabling backside metals (BSMs) and contacts offer new design–technology co-optimization (DTCO) opportunities to further enhance power, performance, and area gains (PPA) in sub-3-nm nodes. This work exploits backside (BS) contact technology within standard cells to extend both signal and clock routing to BSM layers, …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 107 – 115
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3617784
Publisher: IEEE

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High-Entropy Analog-Based Strong Physical Unclonable Function With Area-to-Entropy-ratio of 166 F2/bit

High-Entropy Analog-Based Strong Physical Unclonable Function With Area-to-Entropy-ratio of 166 F2/bit 150 150
Author(s): Alessandro Catania, Sebastiano Strangio, Maksym Paliy, Christian Sbrana, Michele Bertozzi, Giuseppe Iannaccone

Abstract:

In this letter, we present a high-entropy strong physically unclonable function (PUF) utilizing weak-inversion current mirrors implemented in a standard 65-nm CMOS technology. Each response bit of the proposed PUF relies on the threshold voltage differences of minimum-sized transistors arranged in a $32\times 32$ matrix. The analog operating principle enables encoding …

Published in: IEEE Solid-State Circuits Letters
Page(s): 309 – 312
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3616263
Publisher: IEEE

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A 76.9 ppm/K Nano-Watt PVT-Insensitive CMOS Voltage Reference Operating From 4 to 300 K for Integrated Cryogenic Quantum Interface

A 76.9 ppm/K Nano-Watt PVT-Insensitive CMOS Voltage Reference Operating From 4 to 300 K for Integrated Cryogenic Quantum Interface 150 150
Author(s): Jing Wang, Jun He, Man-Kay Law, Xinzhe Wang, Futian Liang, Lin Cheng

Abstract:

This work proposes a temperature and process-compensated low-power Cryo-CMOS voltage reference without trimming for quantum integrated interface, which is capable of operating continuously from room temperature (RT) down to cryogenic temperatures. By compensating for the main accuracy limiting factors including the process dependence of the transistor threshold voltage, device mismatch …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 3242 – 3256
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3530472
Publisher: IEEE

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