Stacking

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A Current-Mode Non-Destructive Circuit Readout Scheme for High-Density 3D Ferroelectric Memory

A Current-Mode Non-Destructive Circuit Readout Scheme for High-Density 3D Ferroelectric Memory 150 150
Author(s): CHaohan Wang, Wagdy Hussein, Yang Xiang, Shankha Mukherjee, Ismail Cevik, Fernando García-Redondo, Annachiara Spagnolo, Hyungrock Oh, Marie Garcia Bardon, Nick Van Helleputte, Julien Ryckaert, Geert Hellings, Dwaipayan Biswas, Jan Van Houdt

Abstract:

The AI era is demanding ever-increasing memory capacity and bandwidth, where 3D-stacked ferroelectric memory (FeRAMs) utilizing nondestructive readout (NDRO) ferroelectric capacitors (FeCAPs) stand as a promising candidate. This work addresses NDRO sensing signal challenges in deeply scaled 3D FeRAMs using a current-mode sensing scheme, co-designed with the device architecture to …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3727137
Publisher: IEEE

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Self-Heating and Parasitic Effects in Multi-Tier CFET Design

Self-Heating and Parasitic Effects in Multi-Tier CFET Design 150 150
Author(s): Sufia Shahin, Mahdi Benkhelifa, Yogesh Singh Chauhan, Hussam Amrouch

Abstract:

In this article, we study the impact of self-heating effects (SHEs) and middle of line (MOL) and back-end of line (BEOL) induced parasitics on multi-tier CFET design, where multiple nanosheet devices are vertically stacked. We analyze and compare the four-tier complementary FET (CFET) design with the conventional two-tier CFET, using …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 153 – 158
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3704373
Publisher: IEEE

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THz-TSI: A Terahertz Wireless Through-Silicon Interconnect Module for Advanced 3-D Integration Applications

THz-TSI: A Terahertz Wireless Through-Silicon Interconnect Module for Advanced 3-D Integration Applications 150 150
Author(s): Chen Jiang, Xiaodi Feng, Xiaohan Shen, Chixiao Chen, Qi Liu, Ming Liu, Ningsheng Xu

Abstract:

By vertically stacking device layers, advanced 3-D integration overcomes traditional planar scaling limits, delivering the bandwidth and power efficiency essential for modern artificial intelligence (AI) and high-performance computing (HPC) integrated systems. However, continued scaling of conventional through-silicon vias (TSVs) and microbumps presents critical bottlenecks due to inherent thermo-mechanical stress, complex …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3720291
Publisher: IEEE

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A High-Density Low-Leakage and Low-Power Fully Voltage-Stacked SRAM for IoT Application

A High-Density Low-Leakage and Low-Power Fully Voltage-Stacked SRAM for IoT Application 150 150
Author(s): Sekeon Kim, Giseok Kim, Kyeongrim Baek, Keonhee Cho, Hyunjun Kim, Yeonho Jung, Dongwook Seo, Sangyeop Baeck, Sungjae Lee, Seong-Ook Jung

Abstract:

The general approach to suppress leakage in static random access memory (SRAM) is to use a low voltage ( $V_{text {L}}$ ), generated by a low-dropout regulator (LDO), as the cell supply voltage (CVDD) of SRAM array in the standby mode. However, the effectiveness of lowering CVDD is constrained by the …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3582974
Publisher: IEEE

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A Capacitive Stacking Mixer-First Receiver With Higher Order Capacitive Feedback

A Capacitive Stacking Mixer-First Receiver With Higher Order Capacitive Feedback 150 150
Author(s): Stef van Zanten, Ronan A. R. van der Zee, Bram Nauta

Abstract:

This article presents a capacitive stacking mixer-first receiver (MF-RX) with a higher order capacitive feedback (CFB) loop designed to increase interferer rejection right at the mixer baseband (BB) node, benefiting both the out-of-band (OOB) linearity of the passive mixer switches and the active BB circuitry. The CFB loop consists of …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 3148 – 3163
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3524278
Publisher: IEEE

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