Stacking

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A High-Density Low-Leakage and Low-Power Fully Voltage-Stacked SRAM for IoT Application

A High-Density Low-Leakage and Low-Power Fully Voltage-Stacked SRAM for IoT Application 150 150
Author(s): Sekeon Kim, Giseok Kim, Kyeongrim Baek, Keonhee Cho, Hyunjun Kim, Yeonho Jung, Dongwook Seo, Sangyeop Baeck, Sungjae Lee, Seong-Ook Jung

Abstract:

The general approach to suppress leakage in static random access memory (SRAM) is to use a low voltage ( $V_{text {L}}$ ), generated by a low-dropout regulator (LDO), as the cell supply voltage (CVDD) of SRAM array in the standby mode. However, the effectiveness of lowering CVDD is constrained by the …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3582974
Publisher: IEEE

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A Capacitive Stacking Mixer-First Receiver With Higher Order Capacitive Feedback

A Capacitive Stacking Mixer-First Receiver With Higher Order Capacitive Feedback 150 150
Author(s): Stef van Zanten, Ronan A. R. van der Zee, Bram Nauta

Abstract:

This article presents a capacitive stacking mixer-first receiver (MF-RX) with a higher order capacitive feedback (CFB) loop designed to increase interferer rejection right at the mixer baseband (BB) node, benefiting both the out-of-band (OOB) linearity of the passive mixer switches and the active BB circuitry. The CFB loop consists of …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 3148 – 3163
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3524278
Publisher: IEEE

View on IEEE Xplore

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