SRAM cells

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An Investigation of Minimum Supply Voltage of 5-nm SRAM From 300 K Down to 10 K

An Investigation of Minimum Supply Voltage of 5-nm SRAM From 300 K Down to 10 K 150 150
Author(s): Hafeez Raza, Shivendra Singh Parihar, Yogesh Singh Chauhan, Hussam Amrouch, Avinash Lahgere

Abstract:

In this article, we present a comprehensive study of the impact of cryogenic temperatures on the minimum operating voltage ( $V_{min }$ ) of 5-nm Fin Field-Effect Transistors (FinFETs)-based Static Random Access Memory (SRAM) cells. To perform the SRAM $V_{min }$ evaluation, we have measured the FinFETs fabricated using a commercial 5…

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 42 – 50
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3560215
Publisher: IEEE

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Binarized Neural-Network Parallel-Processing Accelerator Macro Designed for an Energy Efficiency Higher Than 100 TOPS/W

Binarized Neural-Network Parallel-Processing Accelerator Macro Designed for an Energy Efficiency Higher Than 100 TOPS/W 150 150
Author(s): Yusaku Shiotsu, Satoshi Sugahara

Abstract:

A binarized neural-network (BNN) accelerator macro is developed based on a processing-in-memory (PIM) architecture having the ability of eight-parallel multiply-accumulate (MAC) processing. The parallel-processing PIM macro, referred to as a PPIM macro, is designed to perform the parallel processing with no use of multiport SRAM cells and to achieve the …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 25 – 33
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3538702
Publisher: IEEE

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