spintronics

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Antiferromagnetic Programmable Neuron: Structure, Training, and Pattern Recognition Applications

Antiferromagnetic Programmable Neuron: Structure, Training, and Pattern Recognition Applications 150 150
Author(s): I. Sotnyk, O. Prokopenko

Abstract:

Artificial neurons based on antiferromagnetic (AFM) spin Hall oscillators (SHOs) are promising elements for creating ultrafast, energy-efficient neuromorphic computing systems. These structures can generate picosecond spikes in response to dc and ac electric currents, thereby mimicking the reaction of biological neurons to an external stimulus. However, conventional AFM neurons have …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 9 – 17
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3633490
Publisher: IEEE

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Quantum Field Theory Model for Spin-Based Devices Using 2-D van der Waals Materials

Quantum Field Theory Model for Spin-Based Devices Using 2-D van der Waals Materials 150 150
Author(s): Axel I. Saenz Rodriguez, Oksana Ostroverkhova, Pallavi Dhagat

Abstract:

We explore the effects of layered geometries of 2-D quantum spin systems as a method to tune and control material properties for spintronic devices. We analyze the dispersion relation of a 2-D quantum spin system with a shifted bilayer square lattice through the linear spin wave (LSW) approximation of quantum …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 171 – 178
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3624217
Publisher: IEEE

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A 180-nm Voltage-Controlled Magneto-Electric RAM With Sub-1-ns Switching Time

A 180-nm Voltage-Controlled Magneto-Electric RAM With Sub-1-ns Switching Time 150 150
Author(s): Haris Suhail, Haoran He, Vinod Kurian Jacob, Jiyue Yang, Kang L. Wang, Sudhakar Pamarti

Abstract:

Memory performance has emerged as a critical factor influencing both system speed and energy efficiency. However, conventional memory technologies such as embedded Flash (eFlash) and static RAM (SRAM) encounter significant scalability limitations beyond the 28-nm CMOS node. Among novel emerging memory technologies, spin-transfer-torque magnetic RAM (STT-MRAM) has gained prominence due …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3609342
Publisher: IEEE

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