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miniSQI: A Compact and Low-Power SQIsign-1D Post-Quantum Digital Signature Verification Accelerator

miniSQI: A Compact and Low-Power SQIsign-1D Post-Quantum Digital Signature Verification Accelerator 150 150
Author(s): Krishna Sai Tarun Ramapragada, Utsav Banerjee

Abstract:

We present the first ASIC demonstration of SQIsign, an isogeny-based National Institute of Standards and Technology (NIST)-candidate post-quantum digital signature scheme. Our optimized Montgomery modular multiplier circuit design enables $2\times $ speedup and energy savings, while an efficient memory organization provides a 31% area savings. We implement SQIsign-1D-Uncompressed signature verification …

Published in: IEEE Solid-State Circuits Letters
Page(s): 238 – 241
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3720807
Publisher: IEEE

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A 3 nm FinFET 125 TOPS/W-29 TFLOPS/W, 90 TOPS/mm2-17 TFLOPS/mm2 SRAM-Based INT8, and FP16 Digital-CIM Compiler With Support for Multi-Weight Update/Cycle

A 3 nm FinFET 125 TOPS/W-29 TFLOPS/W, 90 TOPS/mm2-17 TFLOPS/mm2 SRAM-Based INT8, and FP16 Digital-CIM Compiler With Support for Multi-Weight Update/Cycle 150 150
Author(s): Haruki Mori, Je-Min Hung, Wei-Chang Zhao, Kinshuk Khare, Brian Crafton, Hiroaki Ishii, Cheng-En Lee, Xiaochen Peng, Xiaoyu Sun, Yorinobu Fujino, Chia-Jung Tsen, Vineet Joshi, Chao-Kai Chuang, Takeshi Hashizume, Chia-Fu Lee, Tan-Li Chou, Kerem Akarvardar, Saman Adham, Yih Wang, Hidehiro Fujiwara, Yu-Der Chih, Yen-Huei Chen, Hung-Jen Liao, Tsung-Yung Jonathan Chang

Abstract:

This article presents an static random-access memory (SRAM)-based digital compute-in-memory (CIM) compiler implemented with 3 nm high- $\kappa $ metal gate (HKMG) FinFET technology, supporting flexible INT8 and FP16 formats for weight and activation multiply-accumulate (MAC) operations, offering configuration flexibility, high accuracy, and improved area and power efficiency. The FP16 digital …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1502 – 1512
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3646072
Publisher: IEEE

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