Simulation

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Probabilistic Computing With Neuromorphic Elements

Probabilistic Computing With Neuromorphic Elements 150 150
Author(s): Zonglong Li, Laurie E. Calvet

Abstract:

This article presents a compact and low-power approach to probabilistic inference based on time-domain analog computation. The proposed system implements a Bayesian classifier using neuromorphic circuit elements simulated in a 130-nm CMOS technology. Probabilities are encoded in the duty cycle of deterministic spiking signals generated by neuron circuits, while likelihood …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 167 – 175
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3712198
Publisher: IEEE

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Physics-Guided Active Learning and Geometry-Aware Electrothermal Screening of Semiconductor Devices: A GaN Case Study

Physics-Guided Active Learning and Geometry-Aware Electrothermal Screening of Semiconductor Devices: A GaN Case Study 150 150
Author(s): Ayoub Sadeghi, Leonid Popryho, Inna Partin-Vaisband

Abstract:

Exploring high-dimensional semiconductor device design spaces under coupled electrothermal constraints remains challenging, particularly in 3D heterogeneous systems with tightly coupled electrical, thermal, and integration requirements. Conventional TCAD-driven exploration is physically accurate but computationally expensive and offers limited insight into governing parameters. This work presents PALTO, a physics-guided active learning framework …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3736280
Publisher: IEEE

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Merged-Reference-Compatible Offset-Canceling Discharge-Based Sensing Circuit for STT-MRAM in 28-nm CMOS

Merged-Reference-Compatible Offset-Canceling Discharge-Based Sensing Circuit for STT-MRAM in 28-nm CMOS 150 150
Author(s): Jaeyong Jang, Mingu Han, Jaehwan Kim, Taehui Na

Abstract:

This article proposes an offset-canceling (OC) discharge-based sensing circuit (OCDC) for spin-transfer-torque magnetic random access memory (STT-MRAM). The proposed circuit simultaneously implements a merged reference line (MRL) architecture and threshold voltage ( $\mathbf {V}_{\mathbf {TH}}$ ) mismatch cancellation, resolving the structural incompatibility between the conventional OC schemes and MRL. A diode-connection-based, …

Published in: IEEE Solid-State Circuits Letters
Page(s): 210 – 213
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3715234
Publisher: IEEE

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FeFET-Based CMOS Current Starvation Programmable Delay Element

FeFET-Based CMOS Current Starvation Programmable Delay Element 150 150
Author(s): Albi Mema, Simon Thomann, Hussam Amrouch

Abstract:

Programmable delay elements (PDEs) are crucial circuit building blocks that enable precise timing adjustments of signal transitions. They are used in various critical applications, like time-to-digital converters. They are often used to mitigate aging by clock skew tuning postfabrication. However, typical CMOS PDE designs require many transistors while still offering …

Published in: IEEE Solid-State Circuits Letters
Page(s): 166 – 169
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3692304
Publisher: IEEE

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A Hybrid Touch Sensing AFE With Common-CVQ (Currents, Voltages, and Charges) Subtraction to Improve Display Noise Immunity for Large Sensing Load

A Hybrid Touch Sensing AFE With Common-CVQ (Currents, Voltages, and Charges) Subtraction to Improve Display Noise Immunity for Large Sensing Load 150 150
Author(s): Seung Hun Choi, Jun Yeol An, Jaewoong Ahn, Si-Woo Kim, Jae-Youl Lee, Yoon-Kyung Choi, Hyung-Min Lee

Abstract:

On-cell touch flexible organic light-emitting diode (OLED) displays face significant display noise (D-noise) challenges due to large parasitic capacitance ( $C_{P}$ ). To address the limitations of conventional methods, this article proposes improved common-current subtraction (CCS), incorporating common-voltage subtraction (CVS) and common-charge subtraction (CQS) techniques. CVS enhances signal-to-noise ratio (SNR) by …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3675678
Publisher: IEEE

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An 8-Bit 400-MS/s 1-Then-2-Bit/Cycle SAR ADC With Comparator Rotation-Based Input-Independent Background Offset Calibration

An 8-Bit 400-MS/s 1-Then-2-Bit/Cycle SAR ADC With Comparator Rotation-Based Input-Independent Background Offset Calibration 150 150
Author(s): Changjoo Kim, Sooho Park, Yohan Choi, Minkyun Shim, Woojin Lee, Donghwi Seo, Chulwoo Kim

Abstract:

This letter presents an 8-bit 400 MS/s 1-then-2-bit/cycle successive approximation register (SAR) analog-to-digital converter (ADC) employing a comparator rotation-based background offset calibration (CRBC) technique. Unlike conventional 1-then-2-bit/cycle architectures, where calibration validity depends on the input voltage, the proposed comparator rotation-based background calibration enables input-independent background calibration, …

Published in: IEEE Solid-State Circuits Letters
Page(s): 345 – 348
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3624263
Publisher: IEEE

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