Silicon germanium

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A High-Power Wideband Sub-THz Power Amplifier With Asymmetric Slotline-Based Series–Parallel Combiner in 130-nm SiGe BiCMOS Technology

A High-Power Wideband Sub-THz Power Amplifier With Asymmetric Slotline-Based Series–Parallel Combiner in 130-nm SiGe BiCMOS Technology 150 150
Author(s): Gunwoo Park, Hyunjoon Kim, Sanggeun Jeon

Abstract:

This article presents a high-power, wideband sub-terahertz power amplifier (PA) implemented in a 130-nm SiGe BiCMOS technology. The PA features a novel asymmetric slotline-based series–parallel combiner (ASSPC) for output power combining. The ASSPC provides both low-loss, wideband combining and efficient admittance matching for four differential cascode PA unit cells, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 16
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3656477
Publisher: IEEE

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A 4 × 224 Gb/s Single-Ended PAM-4 Transceiver Front-End With Noise Suppression Technique and Cascaded Equalizers in 130-nm SiGe BiCMOS

A 4 × 224 Gb/s Single-Ended PAM-4 Transceiver Front-End With Noise Suppression Technique and Cascaded Equalizers in 130-nm SiGe BiCMOS 150 150
Author(s): Xiongshi Luo, Xuewei You, Zhenghao Li, Hongzhi Wu, Yangyi Zhang, Fuzhan Chen, Xuxu Cheng, Wentao Zhou, Quan Pan

Abstract:

A dc-coupled analog single-ended (SE) transceiver (TRX) front-end supporting 224 Gb/s/lane is presented. It features SE-to-differential (S2D) and differential-to-SE (D2S) conversion, power-efficient broadband analog equalization, and noise suppression. Both the transmitter and receiver front-ends adopt pseudodifferential structures with dual-loop regulators to achieve a high power supply rejection …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 10
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3644437
Publisher: IEEE

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220 GHz, 8.5-dBm Saturated Output Power Wideband Power Amplifier in SiGe BiCMOS

220 GHz, 8.5-dBm Saturated Output Power Wideband Power Amplifier in SiGe BiCMOS 150 150
Author(s): Xun Chen, Jonas Winkelhake, Muh-Dey Wei, Renato Negra

Abstract:

This letter presents a broadband $G$ -band power amplifier (PA) designed in a 130-nm silicon-germanium (SiGe) bipolar complementary metal-oxide-semiconductor technology. Unlike dual-band matching and staggered tuning techniques to obtain large operation bandwidth (BW), we propose a common broadband amplification stage in this work for its flexibility. In each stage, inductive …

Published in: IEEE Solid-State Circuits Letters
Page(s): 17 – 20
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3646267
Publisher: IEEE

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Two 7–13-GHz GaAs-SiGe Four–Channel Beamforming Chiplets With/Without Metallic Interlayer Shields

Two 7–13-GHz GaAs-SiGe Four–Channel Beamforming Chiplets With/Without Metallic Interlayer Shields 150 150
Author(s): Nengxu Zhu, Yiting Zhang, Genyin Ma, Fanyi Meng

Abstract:

This letter presents two 7–13-GHz GaAs-SiGe four-channel beamforming chiplets to minimize the chip area. The chips integrate GaAs-based power amplifiers (PAs) and low-noise amplifiers (LNAs) with silicon-based phase and amplitude control modules using gold bumps. To mitigate coupling between the metal patterns of the heterogeneous chips and avoid interference with …

Published in: IEEE Solid-State Circuits Letters
Page(s): 161 – 164
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3573757
Publisher: IEEE

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