Sensors

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A Sub-Threshold Oscillator-Based High-Accuracy Temperature Sensor With Tolerance to Supply Fluctuation and Device Aging

A Sub-Threshold Oscillator-Based High-Accuracy Temperature Sensor With Tolerance to Supply Fluctuation and Device Aging 150 150
Author(s): Wei Wang, Yumin Su, Shayok Dutta, Liwen Jiang, Zhiyu Chen, Zhanghao Yu, Caleb Kemere, Kaiyuan Yang

Abstract:

Accurate, low-power, and compact temperature sensors are demanded in a wide range of biomedical, environmental, and industrial sensing applications. This article presents an accurate and precise CMOS temperature sensor based on a sub-threshold ring oscillator (RO) in 180 nm. The sensing core employs a five-stage super cut-off contention-free (SCCF) delay cell …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3644747
Publisher: IEEE

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A Cryo-CMOS Smart Temperature Sensor for the Ultrawide Temperature Range From 5 K to 296 K

A Cryo-CMOS Smart Temperature Sensor for the Ultrawide Temperature Range From 5 K to 296 K 150 150
Author(s): D. Cerviño Fungueiriño, L. A. Enthoven, J. van Staveren, M. Babaie, F. Sebastiano

Abstract:

This work presents a cryo-CMOS smart temperature sensor operating from room temperature down to 5 K. By adopting sensing elements (CMOS bulk diodes, pMOS/DTMOS in weak inversion) that circumvent the poor cryogenic performance of Si BJTs, a robust switched-capacitor second-order sigma–delta readout and cryogenic-aware design techniques, the sensor achieves …

Published in: IEEE Solid-State Circuits Letters
Page(s): 29 – 32
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3650657
Publisher: IEEE

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Actiniaria: Distributed Dynamic-IR-Drop-Aware Timing Monitor for AVFS With Lightweight Tentacles

Actiniaria: Distributed Dynamic-IR-Drop-Aware Timing Monitor for AVFS With Lightweight Tentacles 150 150
Author(s): Junyi Qian, Lishuo Deng, Cai Li, Yizhi Ding, Weiwei Shan

Abstract:

Advances in integrated circuit (IC) technology have amplified the effects of process, voltage, and temperature (PVT) variations, particularly dynamic IR drop, which severely affects timing. Post-silicon IR drop monitoring circuits are lacking, forcing designers to reserve substantial static guard bands for worst-case scenarios, compromising energy efficiency. Inspired by biomimetics, this …

Published in: IEEE Solid-State Circuits Letters
Page(s): 25 – 28
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3645701
Publisher: IEEE

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Advancing On-Cell Near-Field Monitoring for Thermal Runaway Detection in EV Batteries

Advancing On-Cell Near-Field Monitoring for Thermal Runaway Detection in EV Batteries 150 150
Author(s): Simon Foster, Scott Block, Daniel McMitchell, Edgar Colin-Beltran, Robert Dailey

Abstract:

A cell monitoring system for performance and safety enhancement is presented. It is the first commercially available single-chip-on-cell near-field contactless solution for automotive battery management, simplifying pack interconnect and reducing points of failure. This letter is a companion paper to the earlier ISSCC paper. It provides further details on the …

Published in: IEEE Solid-State Circuits Letters
Page(s): 369 – 372
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3634340
Publisher: IEEE

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kNOT: A 2-D Distributed Network-on-Textile Architecture With Direct Die-to-Yarn Integration of 0.6 × 2.15 mm2 SoC and bySPI Chiplets for Wearable Computing

kNOT: A 2-D Distributed Network-on-Textile Architecture With Direct Die-to-Yarn Integration of 0.6 × 2.15 mm2 SoC and bySPI Chiplets for Wearable Computing 150 150
Author(s): Anjali Agrawal, Zhenghong Chen, Braden E. Desman, Jinhua Wang, Akiyoshi Tanaka, Fahim Foysal, Charles D. Hess, Will Farrell, Jim Owens, Daniel S. Truesdell, Benton H. Calhoun

Abstract:

This article presents kNOT, a scalable, distributed, and 2-D Network-On-Textile (kNOT) comprising miniaturized systems on chip (SoCs) and bypass SPI (bySPI) networking chiplets that together enable diverse networking and computational tasks. To preserve garment comfort and flexibility, kNOT eliminates bulky boards and interposers through direct-die attachment to embroidered yarns. The …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 103 – 115
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3624099
Publisher: IEEE

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A 0.8-μm 32-Mpixel Always-On CMOS Image Sensor With Windmill-Pattern Edge Extraction and On-Chip DNN

A 0.8-μm 32-Mpixel Always-On CMOS Image Sensor With Windmill-Pattern Edge Extraction and On-Chip DNN 150 150
Author(s): Mamoru Sato, Sachio Akebono, Kazuyoshi Yasuoka, Eriko Kato, Masahiro Tsuruta, Chiaki Takano, Kensuke Ota, Kazuki Haraguchi, Masahiro Watanabe, Genki Fujii, Koichiro Yamanaka, Kazunori Yasuda, Satoshi Minami, Katsuhiko Hanzawa, Kohei Matsuda, Akihiko Kato, Yosuke Ueno

Abstract:

This letter presents a CMOS image sensor (CIS) that integrates two operation modes: 1) a high-resolution viewing mode with $0.8~\mu $ m 32 Mpixels and 2) a low-power always-on object recognition mode consuming 2.67 mW at 10 frames/s. The CIS features a unique windmill-pattern analog edge extraction circuit that is resilient to illumination variations. An …

Published in: IEEE Solid-State Circuits Letters
Page(s): 353 – 356
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3628314
Publisher: IEEE

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A 560 μ W, 6 fA/√Hz, 146 dB-DR Ultrasensitive Current Readout Circuit for PWM-Dimming-Tolerant Under-Display Ambient Light Sensors

A 560 μ W, 6 fA/√Hz, 146 dB-DR Ultrasensitive Current Readout Circuit for PWM-Dimming-Tolerant Under-Display Ambient Light Sensors 150 150
Author(s): Xiuzhi Zhao, Liheng Liu, Shi Chen, Tianxiang Qu, Qinjing Pan, Dan Li, Gan Guo, Zhiliang Hong, Jiawei Xu

Abstract:

This letter presents an ultralow-noise, power-efficient, and pulse-width modulation (PWM)-dimming-tolerant photocurrent readout circuit for under-display ambient light sensor (ALS). A transimpedance amplifier (TIA) with a feedback diode achieves G $\Omega $ -level resistance and 6 fA/ $\surd $ Hz input current noise, enabling sub-pA resolution. Instability and noise folding are mitigated at …

Published in: IEEE Solid-State Circuits Letters
Page(s): 361 – 364
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3626378
Publisher: IEEE

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An Area and Power Efficient Source Driver IC With Multi-Line Sensing Real-Time Pixel Compensation for OLED Displays

An Area and Power Efficient Source Driver IC With Multi-Line Sensing Real-Time Pixel Compensation for OLED Displays 150 150
Author(s): Jaewoong Ahn, Seung Hun Choi, Minseong Um, Jun Yeol An, Hyung-Min Lee

Abstract:

This article proposes a source driver integrated circuit (SD-IC) with a pixel compensator designed to minimize both silicon area and power consumption for organic light-emitting diode (OLED) displays. The proposed SD-IC is capable of driving ultrahigh-definition (UHD) active-matrix OLED (AMOLED) panels with a one-horizontal-time (1-H time) of $7.2~\mu $ s while …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3614134
Publisher: IEEE

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A Bit-Cell Failure Analysis Framework for Ferroelectric Field-Effect Transistor-Based Memories

A Bit-Cell Failure Analysis Framework for Ferroelectric Field-Effect Transistor-Based Memories 150 150
Author(s): Jianze Wang, Wei Zhang, Xuanyao Fong

Abstract:

The ferroelectric field-effect transistor (FeFET) is a promising memory device technology due to desirable attributes, such as fast access times, high memory cell density, good endurance, compatibility with CMOS process, and impressive scalability. While previous research has explored the impact of process variations at the device level, their effects on …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 123 – 130
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3616007
Publisher: IEEE

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