sense amplifier

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Sensing- and Periphery-Aware Modeling of a Hybrid MTJ–CMOS Nonvolatile One-Bit Sign-Weight Memory Subsystem for Energy-Constrained Edge Inference

Sensing- and Periphery-Aware Modeling of a Hybrid MTJ–CMOS Nonvolatile One-Bit Sign-Weight Memory Subsystem for Energy-Constrained Edge Inference 150 150
Author(s): Byeong-Gwon Kim, Byeong-Kwon Ju, Ki-Young Lee

Abstract:

Spin-transfer-torque magnetic random-access memory (STT-MRAM) is attractive for nonvolatile one-bit sign-weight storage, but a favorable cell or local-read metric does not establish subsystem efficiency. We analyze a hybrid magnetic tunnel junction (MTJ)–complementary metal-oxide-semiconductor (CMOS) memory subsystem in which MTJs store static signs while sensing, reference generation, sign staging, scale …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3726699
Publisher: IEEE

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Comparative Analysis of Sense Amplifier Circuits for Hybrid CMOS-MTJ CIM Architecture

Comparative Analysis of Sense Amplifier Circuits for Hybrid CMOS-MTJ CIM Architecture 150 150
Author(s): Yashvardhan Singh, Siddharth Penumatsa, Prashanth Barla

Abstract:

Spin-transfer torque magnetic tunnel junction (STT-MTJ) is widely recognized as a promising device for computation-in-memory (CIM) architecture due to its advantages, such as simple nonvolatile structure, CMOS compatibility, and scalability. In spite of the advantages, achieving reliable and efficient sensing of STT-MTJ remains a design challenge. This work presents a …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 95 – 103
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3690460
Publisher: IEEE

View on IEEE Xplore

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