Scattering parameters

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A W-Band Active Bidirectional Phase Shifter With 2° RMS Phase Error Over 26.4% FBW Using Back-Gate Biasing in 28-nm FD-SOI CMOS

A W-Band Active Bidirectional Phase Shifter With 2° RMS Phase Error Over 26.4% FBW Using Back-Gate Biasing in 28-nm FD-SOI CMOS 150 150
Author(s): Sungwon Kwon, Byung-Wook Min

Abstract:

This article presents a W-band active bidirectional vector-sum phase shifter (Bi-VSPS) using a bidirectional phase-inverting variable-gain amplifier (Bi-PIVGA) with back-gate biasing in 28-nm fully depleted silicon-on-insulator (FD-SOI) CMOS. The Bi-PIVGA employs a neutralization technique that cancels the gate-to-drain capacitances of both active and inactive transistors in each signal direction. By …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3699765
Publisher: IEEE

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A 10 to 40 GHz Reflection-Mode N-Path Filter

A 10 to 40 GHz Reflection-Mode N-Path Filter 150 150
Author(s): Cody J. Ellington, Sandeep Hari, Brian A. Floyd

Abstract:

A bandpass reflection-mode N-path filter (RMNF) with 2-GHz bandwidth and 10 to 40 GHz center-frequency tuning is presented. The design includes a broadband hybrid coupler, N-path reflectors, comprising four-phase passive mixers terminated with third-order in-phase and quadrature-phase active baseband loads, and a broadband clock-generation network. The reflectors realize an in-band open circuit …

Published in: IEEE Solid-State Circuits Letters
Page(s): 169 – 172
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3575536
Publisher: IEEE

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