Resistors

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A 70-GHz Bandwidth Amplifier With Integrated Differential Bridged T-Coil Peaking and Uniform Group Delay

A 70-GHz Bandwidth Amplifier With Integrated Differential Bridged T-Coil Peaking and Uniform Group Delay 150 150
Author(s): Giovanni Scarlato, John R. Long

Abstract:

A two-stage amplifier in 22-nm FD-SOI CMOS integrates a fully-differential bridged T-coil for the first time. Circuit performance is benchmarked against an identical amplifier topology designed with single-ended T-coils (pseudo-differential) and an unpeaked reference. It realizes 70-GHz bandwidth with 12 1 2-ps group delay and > 10-dB return loss across 90 GHz. Bandwidth is 2.2…

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3661366
Publisher: IEEE

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A Cryo-CMOS Smart Temperature Sensor for the Ultrawide Temperature Range From 5 K to 296 K

A Cryo-CMOS Smart Temperature Sensor for the Ultrawide Temperature Range From 5 K to 296 K 150 150
Author(s): D. Cerviño Fungueiriño, L. A. Enthoven, J. van Staveren, M. Babaie, F. Sebastiano

Abstract:

This work presents a cryo-CMOS smart temperature sensor operating from room temperature down to 5 K. By adopting sensing elements (CMOS bulk diodes, pMOS/DTMOS in weak inversion) that circumvent the poor cryogenic performance of Si BJTs, a robust switched-capacitor second-order sigma–delta readout and cryogenic-aware design techniques, the sensor achieves …

Published in: IEEE Solid-State Circuits Letters
Page(s): 29 – 32
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3650657
Publisher: IEEE

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A 1-8 GHz, 190MHz BB BW Mixer-First Receiver With Bootstrapped Mixer Switches Achieving Over 16dBm In-Band IIP3

A 1-8 GHz, 190MHz BB BW Mixer-First Receiver With Bootstrapped Mixer Switches Achieving Over 16dBm In-Band IIP3 150 150
Author(s): Erwin Hardeveld, Ronan van der Zee, Bram Nauta

Abstract:

In this article, we propose a wideband mixer-first receiver with improved in-band (IB) linearity. It uses bootstrapped N-path mixer switches to achieve a constant on-state gate–source voltage for large IB signals. We analyze the tradeoff between on-state resistance and off-state subthreshold current in conventional mixer switches and introduce a …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3606117
Publisher: IEEE

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An 8.5 MHz 42 ppm/°C Relaxation Oscillator With Charge-Pump Delay Cancellation and Digital Chopping Demodulation

An 8.5 MHz 42 ppm/°C Relaxation Oscillator With Charge-Pump Delay Cancellation and Digital Chopping Demodulation 150 150
Author(s): Yongjia Li, Jianlin Xia, Feng Cheng, Yifan Cao, Jin Wu, Encheng Zhu, Xiaofeng Sun, Dejin Wang, Long Zhang, Zhongyuan Fang, Weifeng Sun

Abstract:

This letter presents an RC oscillator featuring a mixed-signal compensation loop that simultaneously mitigates comparator offset, loop delay, switch on-resistance, and temperature dependency. The oscillator employs an auxiliary comparator, a charge pump, and a differential difference amplifier (DDA)-based main comparator to suppress ramping voltage overshoots caused by device and …

Published in: IEEE Solid-State Circuits Letters
Page(s): 333 – 336
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3615833
Publisher: IEEE

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Design and Verification of Low Parasitic MOS Capacitors With Series Connected Tri-Well Junctions

Design and Verification of Low Parasitic MOS Capacitors With Series Connected Tri-Well Junctions 150 150
Author(s): Zhendong Li, Yongjuan Shi, Yifan Jiang, Chen Hu, Junting Chen, Mengyuan Hua, Xun Liu, Junmin Jiang

Abstract:

This letter presents a tri-well implementation of MOS capacitors designed to tackle the challenge of high parasitic capacitance. By serially connecting the three parasitic well junction capacitors between the three wells (N-Well, deep P-Well, and deep N-Well) and substrate (PSUB), the parasitic capacitance can be significantly decreased. A higher bias …

Published in: IEEE Solid-State Circuits Letters
Page(s): 277 – 280
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3608282
Publisher: IEEE

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A 0.32-pJ/b 100-Gb/s PAM-4 TIA in 28-nm CMOS

A 0.32-pJ/b 100-Gb/s PAM-4 TIA in 28-nm CMOS 150 150
Author(s): Chongyun Zhang, Li Wang, Fuzhan Chen, C. Patrick Yue

Abstract:

This letter presents a 0.32 pJ/bit 100-Gb/s PAM-4 CMOS transimpedance amplifier (TIA). Several techniques are proposed to alleviate TIA design tradeoffs while pushing energy efficiency to a limit. A multipeaking input network is designed to relieve the bandwidth (BW) degradation from parasitics of input interface and ESD diodes. An …

Published in: IEEE Solid-State Circuits Letters
Page(s): 273 – 276
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3603569
Publisher: IEEE

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A 45-V Auto-Zero-Stabilized Chopper Instrumentation Amplifier With 1.8- μ V Offset, 33.5- μ V Ripple, and 42-V Common-Mode Input Range

A 45-V Auto-Zero-Stabilized Chopper Instrumentation Amplifier With 1.8- μ V Offset, 33.5- μ V Ripple, and 42-V Common-Mode Input Range 150 150
Author(s): Jiahao Wang, Shen Ye, Shiqi Zhang, Zhiliang Hong, Jiawei Xu

Abstract:

This letter presents a 45V high-precision current-feedback instrumentation amplifier (CFIA) that combines both chopping and auto-zeroing (AZ) to achieve 1.8- $mu $ V input offset (10 samples) and 33.5- $mu $ V input-referred ripple. The AZ is duty cycled to minimize power and silicon area, with a parallel auxiliary path operating during AZ …

Published in: IEEE Solid-State Circuits Letters
Page(s): 173 – 176
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3576393
Publisher: IEEE

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