Resistors

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A 1.59 pJ/b 112-Gb/s PAM-4 and 1.06 pJ/b 168-Gb/s PAM-8 Resistor-Less 7-bit SST DAC-Based Transmitter With 8-Tap FFE

A 1.59 pJ/b 112-Gb/s PAM-4 and 1.06 pJ/b 168-Gb/s PAM-8 Resistor-Less 7-bit SST DAC-Based Transmitter With 8-Tap FFE 150 150
Author(s): Yao-Hung Tsai, Ming-Han Chuang, Shen-Iuan Liu

Abstract:

A resistor-less 7-bit source-series-termination (SST) digital-to-analog converter (DAC)-based transmitter (TX) with an 8-tap feedforward equalizer (FFE) is presented. Three different resistor-less SST segments (SSTSs) are employed to achieve low capacitance, compact area, and scaling friendliness. To reduce the output jitter of the 4:1 multiplexer due to the inter-symbol-interference (ISI), the …

Published in: IEEE Solid-State Circuits Letters
Page(s): 226 – 229
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3722281
Publisher: IEEE

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A Self-Calibrated NPN-Based Temperature Sensor With ±0.05 °C (3σ) Inaccuracy From −70 °C to 125 °C and 100fJ ${\\cdot}$ K2 Resolution FoM

A Self-Calibrated NPN-Based Temperature Sensor With ±0.05 °C (3σ) Inaccuracy From −70 °C to 125 °C and 100fJ ${\\cdot}$ K2 Resolution FoM 150 150
Author(s): Nandor G. Toth, Kofi A. A. Makinwa

Abstract:

This article presents a CMOS temperature sensor that achieves both state-of-the-art energy efficiency and accuracy. An NPN-based front-end generates both PTAT and CTAT currents, whose ratio is then digitized by a continuous-time (CT) $\Delta \Sigma $ modulator, which realizes a noise-optimized current-balancing scheme that maximizes the sensor’s resolution. To correct …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3721315
Publisher: IEEE

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A 60-V High-Linearity Shunt-Based In-Line Current Sensor With DLL-Assisted Dynamic Body-Biasing and High dV/dt PWM Rejection Up to 2MHz

A 60-V High-Linearity Shunt-Based In-Line Current Sensor With DLL-Assisted Dynamic Body-Biasing and High dV/dt PWM Rejection Up to 2MHz 150 150
Author(s): Heng Ma, Huajun Zhang, Yuyan Liu, Qinwen Fan

Abstract:

This article presents a fully integrated shunt-resistor-based in-line current sensor for high-voltage (HV) pulse-width modulation (PWM)-based power systems. Floating-Gm current sensors are effective at rejecting HV PWM common-mode (CM) interference, but their linearity degrades at high CM voltages due to the substrate current-induced body effect (SCBE) in HV laterally …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3716767
Publisher: IEEE

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A High-Linearity Shunt-Based In-Line Current Sensor With Self-Heating Compensation and 14.4 V 2 MHz PWM Rejection

A High-Linearity Shunt-Based In-Line Current Sensor With Self-Heating Compensation and 14.4 V 2 MHz PWM Rejection 150 150
Author(s): Heng Ma, Huajun Zhang, Yuyan Liu, Marco Berkhout, Qinwen Fan

Abstract:

This article presents a cost-effective, fully integrated shunt-resistor-based in-line current sensor that delivers high linearity and strong PWM rejection, enabling precise current measurement and control in dynamic driving systems like robotics, imaging, and audio. To mitigate the self-heating of the on-chip shunt resistor, which degrades linearity, a location-based thermal compensation …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3685735
Publisher: IEEE

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A 16 MHz RC Frequency Reference With ±450 ppm Inaccuracy From –45 °C to 85 °C After Accelerated Aging

A 16 MHz RC Frequency Reference With ±450 ppm Inaccuracy From –45 °C to 85 °C After Accelerated Aging 150 150
Author(s): Karimeldeen Mohamed, Nandor G. Toth, Hui Jiang, Çağrı Gürleyük, Kofi A. A. Makinwa

Abstract:

This article presents a high-accuracy, low-drift 16MHz RC frequency reference implemented in a standard 180 nm CMOS process. It consists of a frequency-locked loop (FLL), which locks the output frequency of a digitally controlled oscillator (DCO) to the time constant of a Wien Bridge (WB) filter. A PNP-based temperature sensor (TS) …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 9
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3673972
Publisher: IEEE

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A 1.1-nJ/Conversion RC-Discharge-Based Resistance Sensor With ±0.65% (3σ) 1 -Point Trimmed Inaccuracy in 0.18-μm CMOS Technology

A 1.1-nJ/Conversion RC-Discharge-Based Resistance Sensor With ±0.65% (3σ) 1 -Point Trimmed Inaccuracy in 0.18-μm CMOS Technology 150 150
Author(s): Mu Wu, Yihang Cheng, Xingli Cui, Sining Pan, Huaqiang Wu

Abstract:

This letter presents an energy-efficient RC discharge-based sensor readout circuit for sub-kilo-ohm resistance measurements. An SAR logic is implemented to adjust the DAC capacitor array to equalize the RC time constants of the resistance-sensing and DAC branches, thereby eliminating the high static current required to bias the small sensing resistor. …

Published in: IEEE Solid-State Circuits Letters
Page(s): 109 – 112
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3677301
Publisher: IEEE

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Xiling: Cryo-CMOS Manipulator Using Dual 18-bit R-2R DACs for Single-Electron Transistor at 60 mK

Xiling: Cryo-CMOS Manipulator Using Dual 18-bit R-2R DACs for Single-Electron Transistor at 60 mK 150 150
Author(s): Yingjie Li, Yifei Zhang, Haichuan Lin, Cheng Wang

Abstract:

Millions of quantum-bits (qubits) are envisioned for a fault-tolerant quantum computer. For scalability, silicon spin qubit stands out due to its compatibility with advanced CMOS processes. Silicon single-electron transistors (SETs) are widely adopted for the quantum state discrimination of spin qubits. For high-fidelity quantum logic gate and readout, the gate …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3671795
Publisher: IEEE

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A 2–18 GHz High-Efficiency CMOS Nonuniform Distributed Power Amplifier With a Novel Reconfigurable Inductive Termination

A 2–18 GHz High-Efficiency CMOS Nonuniform Distributed Power Amplifier With a Novel Reconfigurable Inductive Termination 150 150
Author(s): Bo Pang, Fei You, Taotao Pang, Rongxing Qin, Zehua Xiao, Yingjie Liu, Yingyu Liu, Xinyu Wang, Junfu Guo, Songbai He

Abstract:

This article presents a 2–18 GHz high-efficiency CMOS nonuniform distributed power amplifier (NDPA) with a novel reconfigurable inductive termination technique for ultra-broadband efficiency enhancement. First, the inherent drawback of the degrading efficiency with growing frequency in a conventional non-reconfigurable NDPA architecture with multi-octave bandwidth is studied. A simple and effective reconfigurable …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3665920
Publisher: IEEE

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An Aging-Robust 32-MHz RC Frequency Reference With 0.4-ppm Allan Deviation and ±1550-ppm Inaccuracy From −40 °C to 125 °C After a 1-Point Trim

An Aging-Robust 32-MHz RC Frequency Reference With 0.4-ppm Allan Deviation and ±1550-ppm Inaccuracy From −40 °C to 125 °C After a 1-Point Trim 150 150
Author(s): Sining Pan, Xiaohan Liu, Junlong Zeng, Yihang Cheng, Kofi. A. A. Makinwa, Huaqiang Wu

Abstract:

This letter presents an aging-robust 32-MHz RC frequency reference based on a frequency-locked-loop (FLL). With a temperature compensation scheme that combines BJTs and aging-robust diffusion resistors, the FLL achieves ±1550-ppm inaccuracy from $-40~^{\circ }$ C to $125~^{\circ }$ C after batch calibration and a low-cost 1-point trim, which increases to ±2350-ppm …

Published in: IEEE Solid-State Circuits Letters
Page(s): 81 – 84
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3664504
Publisher: IEEE

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