Resistors

  • No Comments

A 1.1nJ/Conversion RC-Discharge-based Resistance Sensor with ±0.65% (3σ) 1-Point Trimmed Inaccuracy in 0.18μm CMOS Technology

A 1.1nJ/Conversion RC-Discharge-based Resistance Sensor with ±0.65% (3σ) 1-Point Trimmed Inaccuracy in 0.18μm CMOS Technology 150 150
Author(s): Mu Wu, Yihang Cheng, Xingli Cui, Sining Pan, Huaqiang Wu

Abstract:

This letter presents an energy-efficient RC discharge-based sensor readout circuit for sub-kΩ resistance measurements. A SAR logic is implemented to adjust the DAC capacitor array to equalize the RC time constants of the resistance-sensing and DAC branches, thereby eliminating the high static current required to bias the small sensing resistor. …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3677301
Publisher: IEEE

View on IEEE Xplore

  • No Comments

Xiling: Cryo-CMOS Manipulator Using Dual 18-bit R-2R DACs for Single-Electron Transistor at 60 mK

Xiling: Cryo-CMOS Manipulator Using Dual 18-bit R-2R DACs for Single-Electron Transistor at 60 mK 150 150
Author(s): Yingjie Li, Yifei Zhang, Haichuan Lin, Cheng Wang

Abstract:

Millions of quantum-bits (qubits) are envisioned for a fault-tolerant quantum computer. For scalability, silicon spin qubit stands out due to its compatibility with advanced CMOS processes. Silicon single-electron transistors (SETs) are widely adopted for the quantum state discrimination of spin qubits. For high-fidelity quantum logic gate and readout, the gate …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3671795
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A 2–18 GHz High-Efficiency CMOS Nonuniform Distributed Power Amplifier With a Novel Reconfigurable Inductive Termination

A 2–18 GHz High-Efficiency CMOS Nonuniform Distributed Power Amplifier With a Novel Reconfigurable Inductive Termination 150 150
Author(s): Bo Pang, Fei You, Taotao Pang, Rongxing Qin, Zehua Xiao, Yingjie Liu, Yingyu Liu, Xinyu Wang, Junfu Guo, Songbai He

Abstract:

This article presents a 2–18 GHz high-efficiency CMOS nonuniform distributed power amplifier (NDPA) with a novel reconfigurable inductive termination technique for ultra-broadband efficiency enhancement. First, the inherent drawback of the degrading efficiency with growing frequency in a conventional non-reconfigurable NDPA architecture with multi-octave bandwidth is studied. A simple and effective reconfigurable …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3665920
Publisher: IEEE

View on IEEE Xplore

  • No Comments

An Aging-Robust 32-MHz RC Frequency Reference With 0.4-ppm Allan Deviation and ±1550-ppm Inaccuracy From −40 °C to 125 °C After a 1-Point Trim

An Aging-Robust 32-MHz RC Frequency Reference With 0.4-ppm Allan Deviation and ±1550-ppm Inaccuracy From −40 °C to 125 °C After a 1-Point Trim 150 150
Author(s): Sining Pan, Xiaohan Liu, Junlong Zeng, Yihang Cheng, Kofi. A. A. Makinwa, Huaqiang Wu

Abstract:

This letter presents an aging-robust 32-MHz RC frequency reference based on a frequency-locked-loop (FLL). With a temperature compensation scheme that combines BJTs and aging-robust diffusion resistors, the FLL achieves ±1550-ppm inaccuracy from $-40~^{\circ }$ C to $125~^{\circ }$ C after batch calibration and a low-cost 1-point trim, which increases to ±2350-ppm …

Published in: IEEE Solid-State Circuits Letters
Page(s): 81 – 84
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3664504
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A 70-GHz Bandwidth Amplifier With Integrated Differential Bridged T-coil Peaking and Uniform Group Delay

A 70-GHz Bandwidth Amplifier With Integrated Differential Bridged T-coil Peaking and Uniform Group Delay 150 150
Author(s): Giovanni Scarlato, John R. Long

Abstract:

A two-stage amplifier in 22-nm FD-SOI CMOS integrates a fully-differential bridged T-coil for the first time. Circuit performance is benchmarked against an identical amplifier topology designed with single-ended T-coils (pseudo-differential) and an unpeaked reference. It realizes 70-GHz bandwidth with $12~\pm ~2$ -ps group delay and >10-dB return loss across 90 GHz. Bandwidth …

Published in: IEEE Solid-State Circuits Letters
Page(s): 65 – 68
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3661366
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A Cryo-CMOS Smart Temperature Sensor for the Ultrawide Temperature Range From 5 K to 296 K

A Cryo-CMOS Smart Temperature Sensor for the Ultrawide Temperature Range From 5 K to 296 K 150 150
Author(s): D. Cerviño Fungueiriño, L. A. Enthoven, J. van Staveren, M. Babaie, F. Sebastiano

Abstract:

This work presents a cryo-CMOS smart temperature sensor operating from room temperature down to 5 K. By adopting sensing elements (CMOS bulk diodes, pMOS/DTMOS in weak inversion) that circumvent the poor cryogenic performance of Si BJTs, a robust switched-capacitor second-order sigma–delta readout and cryogenic-aware design techniques, the sensor achieves …

Published in: IEEE Solid-State Circuits Letters
Page(s): 29 – 32
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3650657
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A 1-8 GHz, 190MHz BB BW Mixer-First Receiver With Bootstrapped Mixer Switches Achieving Over 16dBm In-Band IIP3

A 1-8 GHz, 190MHz BB BW Mixer-First Receiver With Bootstrapped Mixer Switches Achieving Over 16dBm In-Band IIP3 150 150
Author(s): Erwin Hardeveld, Ronan van der Zee, Bram Nauta

Abstract:

In this article, we propose a wideband mixer-first receiver with improved in-band (IB) linearity. It uses bootstrapped N-path mixer switches to achieve a constant on-state gate–source voltage for large IB signals. We analyze the tradeoff between on-state resistance and off-state subthreshold current in conventional mixer switches and introduce a …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3606117
Publisher: IEEE

View on IEEE Xplore

  • No Comments

An 8.5 MHz 42 ppm/°C Relaxation Oscillator With Charge-Pump Delay Cancellation and Digital Chopping Demodulation

An 8.5 MHz 42 ppm/°C Relaxation Oscillator With Charge-Pump Delay Cancellation and Digital Chopping Demodulation 150 150
Author(s): Yongjia Li, Jianlin Xia, Feng Cheng, Yifan Cao, Jin Wu, Encheng Zhu, Xiaofeng Sun, Dejin Wang, Long Zhang, Zhongyuan Fang, Weifeng Sun

Abstract:

This letter presents an RC oscillator featuring a mixed-signal compensation loop that simultaneously mitigates comparator offset, loop delay, switch on-resistance, and temperature dependency. The oscillator employs an auxiliary comparator, a charge pump, and a differential difference amplifier (DDA)-based main comparator to suppress ramping voltage overshoots caused by device and …

Published in: IEEE Solid-State Circuits Letters
Page(s): 333 – 336
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3615833
Publisher: IEEE

View on IEEE Xplore

  • No Comments

Design and Verification of Low Parasitic MOS Capacitors With Series Connected Tri-Well Junctions

Design and Verification of Low Parasitic MOS Capacitors With Series Connected Tri-Well Junctions 150 150
Author(s): Zhendong Li, Yongjuan Shi, Yifan Jiang, Chen Hu, Junting Chen, Mengyuan Hua, Xun Liu, Junmin Jiang

Abstract:

This letter presents a tri-well implementation of MOS capacitors designed to tackle the challenge of high parasitic capacitance. By serially connecting the three parasitic well junction capacitors between the three wells (N-Well, deep P-Well, and deep N-Well) and substrate (PSUB), the parasitic capacitance can be significantly decreased. A higher bias …

Published in: IEEE Solid-State Circuits Letters
Page(s): 277 – 280
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3608282
Publisher: IEEE

View on IEEE Xplore

Search this website