resistive ram

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Integrated Spatiotemporal Multiscale-Multiphysics-Uncertainty Simulation for Controlling Variability in RRAM Devices

Integrated Spatiotemporal Multiscale-Multiphysics-Uncertainty Simulation for Controlling Variability in RRAM Devices 150 150
Author(s): Ziyan Liao, Zhiheng Huang, Min Xiao, Yuezhong Meng, Hui Yan, Yang Liu

Abstract:

Resistive random access memory (RRAM) is a leading candidate for next-generation nonvolatile memory and neuromorphic computing. However, its performance is limited by inherent switching variability and uncertainties in spatiotemporal multiscale materials and processes. This study integrates multiphysics and multiscale modeling with uncertainty quantification (UQ) to systematically address these limitations and …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 1 – 1
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3633067
Publisher: IEEE

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MINOTAUR: A Posit-Based 0.42–0.50-TOPS/W Edge Transformer Inference and Training Accelerator

MINOTAUR: A Posit-Based 0.42–0.50-TOPS/W Edge Transformer Inference and Training Accelerator 150 150
Author(s): Kartik Prabhu, Robert M. Radway, Jeffrey Yu, Kai Bartolone, Massimo Giordano, Fabian Peddinghaus, Yonatan Urman, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Subhasish Mitra, Priyanka Raina

Abstract:

Transformer models have revolutionized natural language processing (NLP) and enabled many new applications, but are challenging to deploy on resource-constrained edge devices due to their high computation and memory demands. We present MINOTAUR, an edge system-on-chip (SoC) for inference and fine-tuning of Transformer models with all memory on the chip. …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1311 – 1323
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3545731
Publisher: IEEE

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