Reliability

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A 136.6-dB-DR 174.3-dB-FoMS Versatile Current-to-Digital Converter With a Truncated-Noise-Shaped Baseline-Servo-Loop

A 136.6-dB-DR 174.3-dB-FoMS Versatile Current-to-Digital Converter With a Truncated-Noise-Shaped Baseline-Servo-Loop 150 150
Author(s): Taeryoung Seol, Sehwan Lee, Geunha Kim, Samhwan Kim, Yeonjae Shin, Jeongyoon Wie, Seungyeob Baik, Hongki Kang, Minyoung Song, Jong-Hyeok Yoon, Junghyup Lee

Abstract:

This article presents a high-resolution, wide dynamic-range (DR) current-to-digital converter (IDC) capable of directly digitizing a broad range of bio-current signals. To achieve high resolution, the IDC uses a second-order continuous-time delta–sigma modulator (CT-DSM) architecture with a low-noise current-recycling operational amplifier (op-amp) and a highly linear pseudo-differential voltage-controlled oscillator (…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3653442
Publisher: IEEE

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A Standalone-in-Memory Voltage Crossover-Based Assist Switching Circuit for Reliable and Efficient Process Tracking Memory Vmin Improvement in Intel 18A-RibbonFET Technology

A Standalone-in-Memory Voltage Crossover-Based Assist Switching Circuit for Reliable and Efficient Process Tracking Memory Vmin Improvement in Intel 18A-RibbonFET Technology 150 150
Author(s): Saroj Satapathy, Amlan Ghosh, John Riley, Jalal Quadri, Jaydeep Kulkarni, Feroze Merchant

Abstract:

Advanced CMOS memory requires voltage biasing assist techniques to achieve low operating voltages (Vmin), which must be deactivated at higher voltages for high electric field reliability. Centralized power management unit (PMU) control signals face timing synchronization and process tracking challenges when distributed across cores to activate assist circuits in various …

Published in: IEEE Solid-State Circuits Letters
Page(s): 37 – 40
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3652110
Publisher: IEEE

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Impact of Aging, Self-Heating, and Parasitics Effects on NSFET and CFET

Impact of Aging, Self-Heating, and Parasitics Effects on NSFET and CFET 150 150
Author(s): Swati Deshwal, Sufia Shahin, Anirban Kar, Yogesh S. Chauhan, Hussam Amrouch

Abstract:

This work presents a comparative analysis of complementary field-effect transistor (CFET) and nanosheet FET (NSFET) architectures, with a focus on self-heating effects (SHEs), negative bias temperature instability (NBTI), hot carrier degradation (HCD), and the impact of back-end-of-line (BEOL) parasitics on standard cell performance. NBTI degradation is modeled using a framework …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 188 – 196
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3624653
Publisher: IEEE

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Understanding Reliability Trade-Offs in 1T-nC and 2T-nC FeRAM Designs

Understanding Reliability Trade-Offs in 1T-nC and 2T-nC FeRAM Designs 150 150
Author(s): Sadik Yasir Tauki, Rudra Biswas, Rakesh Acharya, Jiahui Duan, Rajiv Joshi, Kai Ni, Vijaykrishnan Narayanan

Abstract:

Ferroelectric random access memory (FeRAM) is a promising candidate for energy-efficient nonvolatile memory, particularly for logic-in-memory and compute-in-memory (CIM) applications. Among the available cell architectures, One-Transistor–n-Capacitor (1T-nC) and two-transistor–n-capacitor (2T-nC) FeRAMs each offer distinct trade-offs in density, scalability, and reliability. In this work, we present a comparative study …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 148 – 156
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3619908
Publisher: IEEE

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An Investigation of Minimum Supply Voltage of 5-nm SRAM From 300 K Down to 10 K

An Investigation of Minimum Supply Voltage of 5-nm SRAM From 300 K Down to 10 K 150 150
Author(s): Hafeez Raza, Shivendra Singh Parihar, Yogesh Singh Chauhan, Hussam Amrouch, Avinash Lahgere

Abstract:

In this article, we present a comprehensive study of the impact of cryogenic temperatures on the minimum operating voltage ( $V_{\min }$ ) of 5-nm Fin Field-Effect Transistors (FinFETs)-based Static Random Access Memory (SRAM) cells. To perform the SRAM $V_{\min }$ evaluation, we have measured the FinFETs fabricated using a commercial 5…

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 42 – 50
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3560215
Publisher: IEEE

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