Random access memory

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MIX-ACIM: A 28-nm Mixed-Precision Analog Compute-in-Memory With Digital Feature Restoration for Vector-Matrix Multiplication

MIX-ACIM: A 28-nm Mixed-Precision Analog Compute-in-Memory With Digital Feature Restoration for Vector-Matrix Multiplication 150 150
Author(s): Wei-Chun Wang, Shida Zhang, Laith Shamieh, Narasimha Vasishta Kidambi, Isha Chakraborty, Saibal Mukhopadhyay

Abstract:

A mixed-precision analog compute-in-memory (Mix-ACIM) is presented for mixed-precision vector-matrix multiplication (VMM). The design features an all-analog current-domain fixed-point (FxP) VMM with floating-point conversion and feature restoration. A 28 nm CMOS test chip shows 41 TOPS/W and 24 TOPS/mm2 for FxP (8-bit input/weight and 12-bit output) and 24.18 TFLOPS/W and 3.3 …

Published in: IEEE Solid-State Circuits Letters
Page(s): 213 – 216
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3590757
Publisher: IEEE

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A High-Density Low-Leakage and Low-Power Fully Voltage-Stacked SRAM for IoT Application

A High-Density Low-Leakage and Low-Power Fully Voltage-Stacked SRAM for IoT Application 150 150
Author(s): Sekeon Kim, Giseok Kim, Kyeongrim Baek, Keonhee Cho, Hyunjun Kim, Yeonho Jung, Dongwook Seo, Sangyeop Baeck, Sungjae Lee, Seong-Ook Jung

Abstract:

The general approach to suppress leakage in static random access memory (SRAM) is to use a low voltage ( $V_{text {L}}$ ), generated by a low-dropout regulator (LDO), as the cell supply voltage (CVDD) of SRAM array in the standby mode. However, the effectiveness of lowering CVDD is constrained by the …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3582974
Publisher: IEEE

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CFET Beyond 3 nm: SRAM Reliability Under Design-Time and Run-Time Variability

CFET Beyond 3 nm: SRAM Reliability Under Design-Time and Run-Time Variability 150 150
Author(s): Sufia Shahin, Swati Deshwal, Anirban Kar, Mahdi Benkhelifa, Yogesh S. Chauhan, Hussam Amrouch

Abstract:

This work investigates the reliability of complementary field-effect transistors (CFETs) by addressing both design-time variability arising from process variations and run-time variability due to temperature and aging effects. A rigorously calibrated TCAD model, validated against experimental CFET data, is employed to quantify the impact of metal gate granularity (MGG)-induced …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 51 – 59
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3568622
Publisher: IEEE

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MINOTAUR: A Posit-Based 0.42–0.50-TOPS/W Edge Transformer Inference and Training Accelerator

MINOTAUR: A Posit-Based 0.42–0.50-TOPS/W Edge Transformer Inference and Training Accelerator 150 150
Author(s): Kartik Prabhu, Robert M. Radway, Jeffrey Yu, Kai Bartolone, Massimo Giordano, Fabian Peddinghaus, Yonatan Urman, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Subhasish Mitra, Priyanka Raina

Abstract:

Transformer models have revolutionized natural language processing (NLP) and enabled many new applications, but are challenging to deploy on resource-constrained edge devices due to their high computation and memory demands. We present MINOTAUR, an edge system-on-chip (SoC) for inference and fine-tuning of Transformer models with all memory on the chip. …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1311 – 1323
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3545731
Publisher: IEEE

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A 128-kbit Approximate Search-Capable Content-Addressable Memory (CAM) With Tunable Hamming Distance

A 128-kbit Approximate Search-Capable Content-Addressable Memory (CAM) With Tunable Hamming Distance 150 150
Author(s): Esteban Garzón, Eyal Rechef, Roman Golman, Odem Harel, Yuval Harary, Paz Snapir, Marco Lanuzza, Adam Teman, Leonid Yavits

Abstract:

The growing need for approximate matching in data-intensive applications, such as data analytics, machine learning, deep learning, and computational genomics has driven the proposal of our Hamming distance (HD) tolerant content-addressable memory (HD-CAM). HD-CAM features a modified NOR-type associative memory cell that leverages the discharge speed of the matchline (ML) …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 3009 – 3019
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3529715
Publisher: IEEE

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