Radio frequency

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Fully Analog, Multi-Lag, RF Correlators for Code-Domain Radars Using Margin Propagation

Fully Analog, Multi-Lag, RF Correlators for Code-Domain Radars Using Margin Propagation 150 150
Author(s): Aswin Undavalli, Kareem Rashed, Abdul Rakib Hossain, Gert Cauwenberghs, Shantanu Chakrabartty, Arun Natarajan, Aravind Nagulu

Abstract:

We present a fully analog, multiplier-free, sampled-domain RF correlator to achieve high energy efficiency for radar workloads. The RF correlator employs a split-source follower architecture that leverages the margin propagation (MP) computing paradigm in the sampled domain. As a proof of concept, we implement a $256 \times 256$ fully analog cross correlator …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 16
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3602920
Publisher: IEEE

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A 0.32-pJ/b 100-Gb/s PAM-4 TIA in 28-nm CMOS

A 0.32-pJ/b 100-Gb/s PAM-4 TIA in 28-nm CMOS 150 150
Author(s): Chongyun Zhang, Li Wang, Fuzhan Chen, C. Patrick Yue

Abstract:

This paper presents a 0.32pJ/bit 100-Gb/s PAM-4 CMOS transimpedance amplifier (TIA). Several techniques are proposed to alleviate TIA design tradeoffs while pushing energy efficiency to a limit. A multi-peaking input network is designed to relieve the BW degradation from parasitics of input interface and ESD diodes. An inverter-based …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3603569
Publisher: IEEE

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A 160-Gb/s D-Band Bi-Directional CMOS Mixer Covering 112–170 GHz for 6G Transceivers

A 160-Gb/s D-Band Bi-Directional CMOS Mixer Covering 112–170 GHz for 6G Transceivers 150 150
Author(s): Chenxin Liu, Yudai Yamazaki, Anyi Tian, Chun Wang, Hans Herdian, Abanob Shehata, Han Nie, Minzhe Tang, Hiroyuki Sakai, Kazuaki Kunihiro, Atsushi Shirane, Kenichi Okada

Abstract:

This work presents a D-band bi-directional CMOS double-balanced mixer (DBM) supporting data rates over 160 Gb/s with a 58-GHz RF bandwidth (112–170 GHz). The mixer employs four identical NMOS passive switches ( $12~\mu $ m/60 nm) in a DBM topology, providing the isolation between RF, LO, and IF ports. Both IF and RF …

Published in: IEEE Solid-State Circuits Letters
Page(s): 241 – 244
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3597690
Publisher: IEEE

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A 240-GHz Sub-THz Direct-Conversion Transmitter With I/Q Phase Calibration in 40-nm CMOS

A 240-GHz Sub-THz Direct-Conversion Transmitter With I/Q Phase Calibration in 40-nm CMOS 150 150
Author(s): Chun-Sheng Lin, Chih-Hsueh Lin, Chun-Hsing Li

Abstract:

A 240-GHz direct-conversion transmitter (TX), consisting of an LO chain and fundamental I/Q mixers, is proposed for sub-THz communication applications. The LO chain integrates phase-shifter-embedded impedance matching networks (IMNs) and frequency tripler with an optimized harmonic IMN, delivering I/Q LO signals at 240 GHz with high output power, 360° phase …

Published in: IEEE Solid-State Circuits Letters
Page(s): 225 – 228
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3592246
Publisher: IEEE

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A 2 pA/ √Hz Input-Referred Noise TIA in 180-nm CMOS With 2.5GHz Bandwidth for Optical Receiver

A 2 pA/ √Hz Input-Referred Noise TIA in 180-nm CMOS With 2.5GHz Bandwidth for Optical Receiver 150 150
Author(s): Yihao Yang, Dan Li, Nan Qi, Binhao Wang

Abstract:

This letter describes an ultra-low-noise, high-speed transimpedance amplifier (TIA) applied to the analog front-end (AFE) circuit of the high-sensitivity optical receiver. A combination of a three-stage amplifier and two positive feedback Miller capacitors is introduced to comprehensively reduce the input-referred noise current (IRNC) of a shunt-feedback TIA (SFTIA) and to …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3584266
Publisher: IEEE

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Two 7–13-GHz GaAs-SiGe Four–Channel Beamforming Chiplets With/Without Metallic Interlayer Shields

Two 7–13-GHz GaAs-SiGe Four–Channel Beamforming Chiplets With/Without Metallic Interlayer Shields 150 150
Author(s): Nengxu Zhu, Yiting Zhang, Genyin Ma, Fanyi Meng

Abstract:

This letter presents two 7–13-GHz GaAs-SiGe four-channel beamforming chiplets to minimize the chip area. The chips integrate GaAs-based power amplifiers (PAs) and low-noise amplifiers (LNAs) with silicon-based phase and amplitude control modules using gold bumps. To mitigate coupling between the metal patterns of the heterogeneous chips and avoid interference with …

Published in: IEEE Solid-State Circuits Letters
Page(s): 161 – 164
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3573757
Publisher: IEEE

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A Simultaneous Dual-Carrier Transformer-Coupled Passive Mixer-First Receiver Front-End Supporting Blocker Suppression

A Simultaneous Dual-Carrier Transformer-Coupled Passive Mixer-First Receiver Front-End Supporting Blocker Suppression 150 150
Author(s): Jamie C. Ye, Alain H. Antón, Sanaz Sadeghi, Russ H. Huang, Alyosha C. Molnar

Abstract:

A high dynamic range N-path passive mixer-first receiver architecture capable of simultaneously down-converting two arbitrary bands through a single RF port is presented. The architecture consists of two passive mixers arranged in a series configuration with a transformer front-end to minimize cross-loading between mixers while still providing impedance transparency and …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1541 – 1553
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3546082
Publisher: IEEE

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A Capacitive Stacking Mixer-First Receiver With Higher Order Capacitive Feedback

A Capacitive Stacking Mixer-First Receiver With Higher Order Capacitive Feedback 150 150
Author(s): Stef van Zanten, Ronan A. R. van der Zee, Bram Nauta

Abstract:

This article presents a capacitive stacking mixer-first receiver (MF-RX) with a higher order capacitive feedback (CFB) loop designed to increase interferer rejection right at the mixer baseband (BB) node, benefiting both the out-of-band (OOB) linearity of the passive mixer switches and the active BB circuitry. The CFB loop consists of …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 3148 – 3163
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3524278
Publisher: IEEE

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