Radio frequency

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A Multiply-and-Accumulate SAR-ADC-Based Hybrid Slepian Beamformer

A Multiply-and-Accumulate SAR-ADC-Based Hybrid Slepian Beamformer 150 150
Author(s): Zhengqi Xu, Zhiyuan Zhao, Michael A. Laun, Coleman DeLude, Justin Romberg, Michael P. Flynn

Abstract:

This article introduces a hybrid Slepian beamforming receiver architecture with low power and area costs. Traditional large-scale true-time-delay (TTD) beamformers for wideband wireless communication suffer from high power consumption and high hardware costs. As an alternative, the Slepian beamforming approach reduces the number of analog-to-digital conversions (ADCs) and delays for …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3651452
Publisher: IEEE

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A 37.8 Mb/mm² SRAM in Intel 18A Technology Featuring a Resistive Supply-Line Write Scheme and Write-Assist With Parallel Boost Injection

A 37.8 Mb/mm² SRAM in Intel 18A Technology Featuring a Resistive Supply-Line Write Scheme and Write-Assist With Parallel Boost Injection 150 150
Author(s): Harold Pilo, Manish Arora, Chien-An Lai, Mike Lee, Zack Lo, Mayur Randeria

Abstract:

A high-density (HD), SRAM-based register file (RF) has been demonstrated in Intel 18A Technology (Wang et al., 2025 and Pilo et al., 2025) featuring RibbonFET GAA transistors and a back side power delivery network (BSDPN). The RF is optimized for HD and array efficiency and achieves a density of 37.8 Mb/mm2, the …

Published in: IEEE Solid-State Circuits Letters
Page(s): 357 – 360
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3628176
Publisher: IEEE

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Frequency-Agile Self-Interference Cancellation in a Wideband Compact Full-Duplex Receiver Using Cascaded Low-Noise and High-Delay-Bandwidth-Product APFs

Frequency-Agile Self-Interference Cancellation in a Wideband Compact Full-Duplex Receiver Using Cascaded Low-Noise and High-Delay-Bandwidth-Product APFs 150 150
Author(s): Xingyu Ma, Wei Li, Shijiao Dong, Ruiyu Lyu, Fan Chen, Yunyou Pu, Chuangguo Wang, Hongtao Xu

Abstract:

Wideband self-interference cancellation (SIC) in a full-duplex (FD) system requires the cancellers to achieve flat nanosecond-scale RF delay while minimizing the noise penalty to the receiver (RX). This work proposes: 1) cascadable hybrid low-noise first-order all-pass filters (APFs) in the first tap of the RF canceller to reduce the noise figure (…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3618610
Publisher: IEEE

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A “No Gain” Direct-Conversion IQ RF-to-Bits Receiver Without Active Linear Amplification

A “No Gain” Direct-Conversion IQ RF-to-Bits Receiver Without Active Linear Amplification 150 150
Author(s): Jeroen Ponte, Roel Plompen, Emiel Zijlma, Eric A. M. Klumperink, Harijot Singh Bindra, Bram Nauta

Abstract:

This work describes a direct-conversion IQ receiver (RX) that does not utilize any active linear (power) amplification, covering its design considerations, prototype implementation, and measurement verification. Only RLC components, MOS transistor (MOST) switches, and comparators are used, leading to several unique design challenges. Key among these are the fact that …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 17
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3611114
Publisher: IEEE

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A 1-8 GHz, 190MHz BB BW Mixer-First Receiver With Bootstrapped Mixer Switches Achieving Over 16dBm In-Band IIP3

A 1-8 GHz, 190MHz BB BW Mixer-First Receiver With Bootstrapped Mixer Switches Achieving Over 16dBm In-Band IIP3 150 150
Author(s): Erwin Hardeveld, Ronan van der Zee, Bram Nauta

Abstract:

In this article, we propose a wideband mixer-first receiver with improved in-band (IB) linearity. It uses bootstrapped N-path mixer switches to achieve a constant on-state gate–source voltage for large IB signals. We analyze the tradeoff between on-state resistance and off-state subthreshold current in conventional mixer switches and introduce a …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3606117
Publisher: IEEE

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A 48-Gb/s Inductorless PAM-4 Optical Receiver With 1.28-pJ/bit Efficiency in 28-nm CMOS

A 48-Gb/s Inductorless PAM-4 Optical Receiver With 1.28-pJ/bit Efficiency in 28-nm CMOS 150 150
Author(s): Chongyun Zhang, Li Wang, Fuzhan Chen, Quan Pan, Xianbo Li, C. Patrick Yue

Abstract:

This work presents a 48-Gb/s four-level pulse amplitude modulation (PAM-4) optical receiver (ORX) with a linear analog front-end (AFE) and an integrated sampler. The AFE employs a transadmittance-stage transimpedance-stage (TAS-TIS) topology, replacing conventional CML-based variable gain amplifiers (VGAs) and post-amplifiers, avoiding continuous-time linear equalizers and passive inductors while preserving …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3607107
Publisher: IEEE

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Fully Analog, Multi-Lag, RF Correlators for Code-Domain Radars Using Margin Propagation

Fully Analog, Multi-Lag, RF Correlators for Code-Domain Radars Using Margin Propagation 150 150
Author(s): Aswin Undavalli, Kareem Rashed, Abdul Rakib Hossain, Gert Cauwenberghs, Shantanu Chakrabartty, Arun Natarajan, Aravind Nagulu

Abstract:

We present a fully analog, multiplier-free, sampled-domain RF correlator to achieve high energy efficiency for radar workloads. The RF correlator employs a split-source follower architecture that leverages the margin propagation (MP) computing paradigm in the sampled domain. As a proof of concept, we implement a $256 \times 256$ fully analog cross correlator …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 16
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3602920
Publisher: IEEE

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A 0.32-pJ/b 100-Gb/s PAM-4 TIA in 28-nm CMOS

A 0.32-pJ/b 100-Gb/s PAM-4 TIA in 28-nm CMOS 150 150
Author(s): Chongyun Zhang, Li Wang, Fuzhan Chen, C. Patrick Yue

Abstract:

This letter presents a 0.32 pJ/bit 100-Gb/s PAM-4 CMOS transimpedance amplifier (TIA). Several techniques are proposed to alleviate TIA design tradeoffs while pushing energy efficiency to a limit. A multipeaking input network is designed to relieve the bandwidth (BW) degradation from parasitics of input interface and ESD diodes. An …

Published in: IEEE Solid-State Circuits Letters
Page(s): 273 – 276
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3603569
Publisher: IEEE

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A 160-Gb/s D-Band Bi-Directional CMOS Mixer Covering 112–170 GHz for 6G Transceivers

A 160-Gb/s D-Band Bi-Directional CMOS Mixer Covering 112–170 GHz for 6G Transceivers 150 150
Author(s): Chenxin Liu, Yudai Yamazaki, Anyi Tian, Chun Wang, Hans Herdian, Abanob Shehata, Han Nie, Minzhe Tang, Hiroyuki Sakai, Kazuaki Kunihiro, Atsushi Shirane, Kenichi Okada

Abstract:

This work presents a D-band bi-directional CMOS double-balanced mixer (DBM) supporting data rates over 160 Gb/s with a 58-GHz RF bandwidth (112–170 GHz). The mixer employs four identical NMOS passive switches ( $12~\mu $ m/60 nm) in a DBM topology, providing the isolation between RF, LO, and IF ports. Both IF and RF …

Published in: IEEE Solid-State Circuits Letters
Page(s): 241 – 244
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3597690
Publisher: IEEE

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