Power supplies

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A 16 V-Output Switched-Capacitor Sigma Converter With 180 ns Transient Response and 94% Efficiency for LiDAR Receivers

A 16 V-Output Switched-Capacitor Sigma Converter With 180 ns Transient Response and 94% Efficiency for LiDAR Receivers 150 150
Author(s): Chen Hu, Xinran Huang, Xun Liu, Sijun Du, Xiaosen Liu, Junmin Jiang

Abstract:

This article presents a step-up switched-capacitor (SC) sigma converter with fast transient, high efficiency, and high accuracy for light detection and ranging (LiDAR) receiver applications. The proposed sigma converter combines an unregulated SC converter in the high-voltage (HV) domain and a low-dropout (LDO) regulator in the low-voltage (LV) domain, achieving …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3645413
Publisher: IEEE

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A 4 × 224 Gb/s Single-Ended PAM-4 Transceiver Front-End With Noise Suppression Technique and Cascaded Equalizers in 130-nm SiGe BiCMOS

A 4 × 224 Gb/s Single-Ended PAM-4 Transceiver Front-End With Noise Suppression Technique and Cascaded Equalizers in 130-nm SiGe BiCMOS 150 150
Author(s): Xiongshi Luo, Xuewei You, Zhenghao Li, Hongzhi Wu, Yangyi Zhang, Fuzhan Chen, Xuxu Cheng, Wentao Zhou, Quan Pan

Abstract:

A dc-coupled analog single-ended (SE) transceiver (TRX) front-end supporting 224 Gb/s/lane is presented. It features SE-to-differential (S2D) and differential-to-SE (D2S) conversion, power-efficient broadband analog equalization, and noise suppression. Both the transmitter and receiver front-ends adopt pseudodifferential structures with dual-loop regulators to achieve a high power supply rejection …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 10
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3644437
Publisher: IEEE

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A 37.8 Mb/mm² SRAM in Intel 18A Technology Featuring a Resistive Supply-Line Write Scheme and Write-Assist With Parallel Boost Injection

A 37.8 Mb/mm² SRAM in Intel 18A Technology Featuring a Resistive Supply-Line Write Scheme and Write-Assist With Parallel Boost Injection 150 150
Author(s): Harold Pilo, Manish Arora, Chien-An Lai, Mike Lee, Zack Lo, Mayur Randeria

Abstract:

A high-density (HD), SRAM-based register file (RF) has been demonstrated in Intel 18A Technology (Wang et al., 2025 and Pilo et al., 2025) featuring RibbonFET GAA transistors and a back side power delivery network (BSDPN). The RF is optimized for HD and array efficiency and achieves a density of 37.8 Mb/mm2, the …

Published in: IEEE Solid-State Circuits Letters
Page(s): 357 – 360
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3628176
Publisher: IEEE

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Reference-Load Sharing Scheme: An Area- and Energy-Efficient Nonvolatile Register Design Using MTJ Devices

Reference-Load Sharing Scheme: An Area- and Energy-Efficient Nonvolatile Register Design Using MTJ Devices 150 150
Author(s): Masanori Natsui, Tomoo Yoshida, Takahiro Hanyu

Abstract:

This article proposes a circuit configuration for an area- and energy-efficient nonvolatile register using magnetic tunnel junction (MTJ) devices, suitable for persistent computation in intermittent computing environments. The proposed configuration, named the reference-load sharing scheme (RLSS), stores 1 bit of information using the resistance of a dedicated MTJ device and a …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 90 – 98
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3611365
Publisher: IEEE

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