Power generation

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A Wideband Digitally Assisted Frequency Tripler With Adaptively Optimized Output Power in 55-nm SiGe BiCMOS

A Wideband Digitally Assisted Frequency Tripler With Adaptively Optimized Output Power in 55-nm SiGe BiCMOS 150 150
Author(s): Daniele Lodi Rizzini, Francesco Tesolin, Michele Rossoni, Riccardo Moleri, Filippo Osio, Andrea Mazzanti, Andrea L. Lacaita, Simone M. Dartizio, Salvatore Levantino

Abstract:

This article presents a 28–38-GHz frequency tripler implemented in 55-nm SiGe BiCMOS technology with a novel on-chip background calibration technique. This technique continuously optimizes the circuit performance by maximizing output power and improving fundamental harmonic rejection. The proposed tripler achieves wideband operation and robust performance across varying operating conditions and …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1844 – 1859
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3666591
Publisher: IEEE

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Design and Analysis of a 13.7–41 GHz Ultra-Wideband Frequency Doubler With Cross-Coupled Push-Push Structure

Design and Analysis of a 13.7–41 GHz Ultra-Wideband Frequency Doubler With Cross-Coupled Push-Push Structure 150 150
Author(s): Kai Li, Keping Wang, Fanyi Meng, Kiat Seng Yeo, Kaixue Ma

Abstract:

This article presents a 13.7–41 GHz ultra-wideband frequency doubler with high efficiency and conversion gain (CG). The proposed cross-coupled push-push structure, in conjunction with the fourth-order transformer-based resonator and the series gate inductor, collaboratively shapes the input signal amplitude such that three distinct peaks emerge at different frequencies, thereby significantly improving …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3667289
Publisher: IEEE

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A K/Ka-Band Transmit/Receive Front-End With Triple-Coupled Transformer Technique in 65-nm Bulk CMOS

A K/Ka-Band Transmit/Receive Front-End With Triple-Coupled Transformer Technique in 65-nm Bulk CMOS 150 150
Author(s): Nayu Li, Ziyao Xiong, Botao Yang, Hang Lu, Yiwei Liu, Xiaokang Qi, Gaopeng Chen, Na Yan, Chunyi Song, Zhiwei Xu

Abstract:

This article presents a K/Ka-band transmit/receive (T/R) front-end for jointed sensing and communication (JSAC) applications. A reconfigurable matching network for both signal reception and transmission is realized using the proposed triple-coupled transformer (TCT) technique, achieving low power loss and a compact footprint. The T/R switch at …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3667736
Publisher: IEEE

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A 2–18 GHz High-Efficiency CMOS Nonuniform Distributed Power Amplifier With a Novel Reconfigurable Inductive Termination

A 2–18 GHz High-Efficiency CMOS Nonuniform Distributed Power Amplifier With a Novel Reconfigurable Inductive Termination 150 150
Author(s): Bo Pang, Fei You, Taotao Pang, Rongxing Qin, Zehua Xiao, Yingjie Liu, Yingyu Liu, Xinyu Wang, Junfu Guo, Songbai He

Abstract:

This article presents a 2–18 GHz high-efficiency CMOS nonuniform distributed power amplifier (NDPA) with a novel reconfigurable inductive termination technique for ultra-broadband efficiency enhancement. First, the inherent drawback of the degrading efficiency with growing frequency in a conventional non-reconfigurable NDPA architecture with multi-octave bandwidth is studied. A simple and effective reconfigurable …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3665920
Publisher: IEEE

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Sub-Terahertz Wideband ASK Transceiver for 14/27/64 Gb/s 0.27-km/0.12-m/0.1-mm Interconnection in 28-nm CMOS

Sub-Terahertz Wideband ASK Transceiver for 14/27/64 Gb/s 0.27-km/0.12-m/0.1-mm Interconnection in 28-nm CMOS 150 150
Author(s): Dawei Tang, Xiaoyue Xia, Leyang Huang, Zekun Li, Chun Yang, Zheng Yan, Si-Yuan Tang, Peigen Zhou, Rui Zhang, Liqun Lu, Wentao Zhu, Zhe Chen, Jixin Chen, Hao Gao, Wei Hong

Abstract:

This article presents a 28-nm CMOS sub-terahertz (sub-THz) amplitude shift-keying (ASK) transceiver achieving competitive wireless and wireline communication performance. The over-the-air (OTA) link demonstrates 14 Gb/s/0.27 km, 16Gb/s/1m, and 27 Gb/s/12 cm without equalization (EQ), while supporting 64 Gb/s on-Off keying (OOK) and 40 Gb/s pulse amplitude modulation (…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 17
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3665552
Publisher: IEEE

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An Optimal Modulation Bits-to-RF Digital Transmitter Using Time-Interleaved Multi-Subharmonic Switching

An Optimal Modulation Bits-to-RF Digital Transmitter Using Time-Interleaved Multi-Subharmonic Switching 150 150
Author(s): Timur Zirtiloglu, Arman Tan, Basak Ozaydin, Ken R. Duffy, Muriel Médard, Rabia Tugce Yazicigil

Abstract:

This article presents a fully integrated bits-to-RF transmitter (Tx) featuring deep power back-off (PBO) enhancements, leveraging a multi-subharmonic switching (multi-SHS) digital power amplifier (DPA) with time-interleaving and a harmonic-rejection digital-to-phase converter (DPC). This work employs a nonuniform optimal modulation (OM) constellation, where symbol probability is inversely related to its amplitude, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3659903
Publisher: IEEE

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Analysis and Design of Power Amplifier Using Parallel-Combined Multisegment Transformer

Analysis and Design of Power Amplifier Using Parallel-Combined Multisegment Transformer 150 150
Author(s): Geuntae Kim, Hyunjin Ahn, Kyutaek Oh, Ilku Nam, Ockgoo Lee

Abstract:

This letter presents a highly efficient power amplifier (PA) using a parallel-combined vertical multisegment transformer for 5G new radio (NR) applications operating in bands n257 and n258, in a 65-nm bulk CMOS process. A multisegment transformer facilitates a lower provided input impedance than a conventional transformer, enabling the PA to …

Published in: IEEE Solid-State Circuits Letters
Page(s): 85 – 88
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3665218
Publisher: IEEE

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A High-Power Wideband Sub-THz Power Amplifier With Asymmetric Slotline-Based Series–Parallel Combiner in 130-nm SiGe BiCMOS Technology

A High-Power Wideband Sub-THz Power Amplifier With Asymmetric Slotline-Based Series–Parallel Combiner in 130-nm SiGe BiCMOS Technology 150 150
Author(s): Gunwoo Park, Hyunjoon Kim, Sanggeun Jeon

Abstract:

This article presents a high-power, wideband sub-terahertz power amplifier (PA) implemented in a 130-nm SiGe BiCMOS technology. The PA features a novel asymmetric slotline-based series–parallel combiner (ASSPC) for output power combining. The ASSPC provides both low-loss, wideband combining and efficient admittance matching for four differential cascode PA unit cells, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 16
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3656477
Publisher: IEEE

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A Compact, Wideband Complex Cascode Power Amplifier With LC Neutralization for VSWR-Resilient Operation in High-Density Phased Arrays

A Compact, Wideband Complex Cascode Power Amplifier With LC Neutralization for VSWR-Resilient Operation in High-Density Phased Arrays 150 150
Author(s): Mohamed Eleraky, Tzu-Yuan Huang, Hua Wang

Abstract:

This article proposes a design methodology for achieving intrinsic performance resilience in power amplifiers (PAs) against antenna impedance variations inherent to modern phased-array systems through the improvement of the PA output matching ( $S!_{22}$ ). This goal, however, presents a challenge for conventional cascode PAs due to their inherently high output impedance …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 16
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3654669
Publisher: IEEE

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