Power dissipation

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Comparative Analysis of Sense Amplifier Circuits for Hybrid CMOS-MTJ CIM Architecture

Comparative Analysis of Sense Amplifier Circuits for Hybrid CMOS-MTJ CIM Architecture 150 150
Author(s): Yashvardhan Singh, Siddharth Penumatsa, Prashanth Barla

Abstract:

Spin-transfer torque magnetic tunnel junction (STT-MTJ) is widely recognized as a promising device for computation-in-memory (CIM) architecture due to its advantages, such as simple nonvolatile structure, CMOS compatibility, and scalability. In spite of the advantages, achieving reliable and efficient sensing of STT-MTJ remains a design challenge. This work presents a …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 95 – 103
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3690460
Publisher: IEEE

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A 256-Element Slepian Beamforming Accelerator With Analog Compute-In-Memory Multiplication and Accumulation

A 256-Element Slepian Beamforming Accelerator With Analog Compute-In-Memory Multiplication and Accumulation 150 150
Author(s): Wei-Chun Wang, Shida Zhang, Coleman DeLude, Laith Shamieh, Nael Mizanur Rahman, Isha Chakraborty, Justin Romberg, Saibal Mukhopadhyay

Abstract:

An analog compute-in-memory (CIM) Slepian beamforming (SBF) accelerator is introduced for large-scale multi-input–multi-output (MIMO). The design performs complex-valued vector–matrix multiplication in the analog domain to project 256 I/Q inputs into a low-dimensional Slepian subspace and uses a digital backend with 4-tap FIR filters to generate one output beam. …

Published in: IEEE Solid-State Circuits Letters
Page(s): 154 – 157
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3690381
Publisher: IEEE

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Benchmarking of Emerging Material-Based TCAMs

Benchmarking of Emerging Material-Based TCAMs 150 150
Author(s): Ashwin Tunga, Junzhe Kang, Zijing Zhao, Ankit Shukla, Wenjuan Zhu, Shaloo Rakheja

Abstract:

This work presents a comprehensive benchmarking of ternary content-addressable memory (TCAM) implementations using timing-accurate SPICE simulations, systematically comparing conventional CMOS designs with emerging device technologies, including magnetic tunnel junctions (MTJs), ferroelectric tunnel junctions (FTJs), ferroelectric field-effect transistors (FeFETs), and 2-D reconfigurable field-effect transistors (2D RFETs). Key performance metrics, including search …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 104 – 112
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3687143
Publisher: IEEE

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