power amplifiers

Inverse Design of Multilayered Pixelated mm-Wave Power Amplifiers

Inverse Design of Multilayered Pixelated mm-Wave Power Amplifiers 150 150

Abstract:

A topology optimization methodology is presented for the design of multistage, multipath, linear and nonlinear millimeter-wave (mm-Wave) power amplifiers (PAs). Optimization algorithms autonomously generate complete multilayered PA core layouts, including actives and passives, with minimal human intervention in just a few days. Experimental results from fabricated linear and nonlinear W-band …

View on IEEE Xplore

A High-Power Wideband Sub-THz Power Amplifier With Asymmetric Slotline-Based Series–Parallel Combiner in 130-nm SiGe BiCMOS Technology

A High-Power Wideband Sub-THz Power Amplifier With Asymmetric Slotline-Based Series–Parallel Combiner in 130-nm SiGe BiCMOS Technology 150 150

Abstract:

This article presents a high-power, wideband sub-terahertz power amplifier (PA) implemented in a 130-nm SiGe BiCMOS technology. The PA features a novel asymmetric slotline-based series–parallel combiner (ASSPC) for output power combining. The ASSPC provides both low-loss, wideband combining and efficient admittance matching for four differential cascode PA unit cells, …

View on IEEE Xplore

A Compact, Wideband Complex Cascode Power Amplifier With LC Neutralization for VSWR-Resilient Operation in High-Density Phased Arrays

A Compact, Wideband Complex Cascode Power Amplifier With LC Neutralization for VSWR-Resilient Operation in High-Density Phased Arrays 150 150

Abstract:

This article proposes a design methodology for achieving intrinsic performance resilience in power amplifiers (PAs) against antenna impedance variations inherent to modern phased-array systems through the improvement of the PA output matching ( $S!_{22}$ ). This goal, however, presents a challenge for conventional cascode PAs due to their inherently high output impedance …

View on IEEE Xplore

220 GHz, 8.5-dBm Saturated Output Power Wideband Power Amplifier in SiGe BiCMOS

220 GHz, 8.5-dBm Saturated Output Power Wideband Power Amplifier in SiGe BiCMOS 150 150

Abstract:

This letter presents a broadband $G$ -band power amplifier (PA) designed in a 130-nm silicon-germanium (SiGe) bipolar complementary metal-oxide-semiconductor technology. Unlike dual-band matching and staggered tuning techniques to obtain large operation bandwidth (BW), we propose a common broadband amplification stage in this work for its flexibility. In each stage, inductive …

View on IEEE Xplore

A 40.68-MHz Dual-Output Wireless Power Transfer System for Millimeter-Scale Biomedical Implants

A 40.68-MHz Dual-Output Wireless Power Transfer System for Millimeter-Scale Biomedical Implants 150 150

Abstract:

This article presents a single-link, dual-output wireless power transfer (WPT) system operating at 40.68 MHz for miniature, high-power biomedical implants. The elevated carrier frequency enables a millimeter-scale receiver (RX) coil while maintaining link efficiency and output power comparable to low-frequency WPT designs. End-to-end (E2E) efficiency is optimized through global power …

View on IEEE Xplore

A Millimeter-Wave Direct Digital Transmitter Using Multiphase Subharmonic Switching PA

A Millimeter-Wave Direct Digital Transmitter Using Multiphase Subharmonic Switching PA 150 150

Abstract:

This article presents a direct digital transmitter (TX) employing a multiphase subharmonic switching (MP-SHS) power amplifier (PA) to achieve both high peak and power back-off (PBO) efficiency with wide signal bandwidth. A phase-shifted subharmonic (SH) local oscillator (LO) divider is proposed to suppress SH spurs with minimal implementation overhead by …

View on IEEE Xplore

A 0.7-V Multiclass Digital Doherty Power Amplifier for BLE Applications With 41% Peak DE in 22-nm CMOS

A 0.7-V Multiclass Digital Doherty Power Amplifier for BLE Applications With 41% Peak DE in 22-nm CMOS 150 150

Abstract:

This letter presents a multiclass, asymmetric digital Doherty power amplifier (DDPA) for Bluetooth low energy (BLE) applications, that achieves high efficiency at full-scale as well as at 8.6-dB back-off using a single 0.7-V supply voltage. The proposed DDPA is made of two power-combined switched-capacitor power amplifiers (SCPAs) and uses an …

View on IEEE Xplore