power amplifiers

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Design and Analysis of a 13.7–41 GHz Ultra-Wideband Frequency Doubler With Cross-Coupled Push-Push Structure

Design and Analysis of a 13.7–41 GHz Ultra-Wideband Frequency Doubler With Cross-Coupled Push-Push Structure 150 150
Author(s): Kai Li, Keping Wang, Fanyi Meng, Kiat Seng Yeo, Kaixue Ma

Abstract:

This article presents a 13.7–41 GHz ultra-wideband frequency doubler with high efficiency and conversion gain (CG). The proposed cross-coupled push-push structure, in conjunction with the fourth-order transformer-based resonator and the series gate inductor, collaboratively shapes the input signal amplitude such that three distinct peaks emerge at different frequencies, thereby significantly improving …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3667289
Publisher: IEEE

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A K/Ka-Band Transmit/Receive Front-End With Triple-Coupled Transformer Technique in 65-nm Bulk CMOS

A K/Ka-Band Transmit/Receive Front-End With Triple-Coupled Transformer Technique in 65-nm Bulk CMOS 150 150
Author(s): Nayu Li, Ziyao Xiong, Botao Yang, Hang Lu, Yiwei Liu, Xiaokang Qi, Gaopeng Chen, Na Yan, Chunyi Song, Zhiwei Xu

Abstract:

This article presents a K/Ka-band transmit/receive (T/R) front-end for jointed sensing and communication (JSAC) applications. A reconfigurable matching network for both signal reception and transmission is realized using the proposed triple-coupled transformer (TCT) technique, achieving low power loss and a compact footprint. The T/R switch at …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3667736
Publisher: IEEE

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A 2–18 GHz High-Efficiency CMOS Nonuniform Distributed Power Amplifier With a Novel Reconfigurable Inductive Termination

A 2–18 GHz High-Efficiency CMOS Nonuniform Distributed Power Amplifier With a Novel Reconfigurable Inductive Termination 150 150
Author(s): Bo Pang, Fei You, Taotao Pang, Rongxing Qin, Zehua Xiao, Yingjie Liu, Yingyu Liu, Xinyu Wang, Junfu Guo, Songbai He

Abstract:

This article presents a 2–18 GHz high-efficiency CMOS nonuniform distributed power amplifier (NDPA) with a novel reconfigurable inductive termination technique for ultra-broadband efficiency enhancement. First, the inherent drawback of the degrading efficiency with growing frequency in a conventional non-reconfigurable NDPA architecture with multi-octave bandwidth is studied. A simple and effective reconfigurable …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3665920
Publisher: IEEE

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An Optimal Modulation Bits-to-RF Digital Transmitter Using Time-Interleaved Multi-Subharmonic Switching

An Optimal Modulation Bits-to-RF Digital Transmitter Using Time-Interleaved Multi-Subharmonic Switching 150 150
Author(s): Timur Zirtiloglu, Arman Tan, Basak Ozaydin, Ken R. Duffy, Muriel Médard, Rabia Tugce Yazicigil

Abstract:

This article presents a fully integrated bits-to-RF transmitter (Tx) featuring deep power back-off (PBO) enhancements, leveraging a multi-subharmonic switching (multi-SHS) digital power amplifier (DPA) with time-interleaving and a harmonic-rejection digital-to-phase converter (DPC). This work employs a nonuniform optimal modulation (OM) constellation, where symbol probability is inversely related to its amplitude, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3659903
Publisher: IEEE

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Analysis and Design of Power Amplifier Using Parallel-Combined Multisegment Transformer

Analysis and Design of Power Amplifier Using Parallel-Combined Multisegment Transformer 150 150
Author(s): Geuntae Kim, Hyunjin Ahn, Kyutaek Oh, Ilku Nam, Ockgoo Lee

Abstract:

This letter presents a highly efficient power amplifier (PA) using a parallel-combined vertical multisegment transformer for 5G new radio (NR) applications operating in bands n257 and n258, in a 65-nm bulk CMOS process. A multisegment transformer facilitates a lower provided input impedance than a conventional transformer, enabling the PA to …

Published in: IEEE Solid-State Circuits Letters
Page(s): 85 – 88
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3665218
Publisher: IEEE

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Inverse Design of Multilayered Pixelated mm-Wave Power Amplifiers

Inverse Design of Multilayered Pixelated mm-Wave Power Amplifiers 150 150
Author(s): Vinay Chenna, Hossein Hashemi

Abstract:

A topology optimization methodology is presented for the design of multistage, multipath, linear and nonlinear millimeter-wave (mm-Wave) power amplifiers (PAs). Optimization algorithms autonomously generate complete multilayered PA core layouts, including actives and passives, with minimal human intervention in just a few days. Experimental results from fabricated linear and nonlinear W-band …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3656334
Publisher: IEEE

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A High-Power Wideband Sub-THz Power Amplifier With Asymmetric Slotline-Based Series–Parallel Combiner in 130-nm SiGe BiCMOS Technology

A High-Power Wideband Sub-THz Power Amplifier With Asymmetric Slotline-Based Series–Parallel Combiner in 130-nm SiGe BiCMOS Technology 150 150
Author(s): Gunwoo Park, Hyunjoon Kim, Sanggeun Jeon

Abstract:

This article presents a high-power, wideband sub-terahertz power amplifier (PA) implemented in a 130-nm SiGe BiCMOS technology. The PA features a novel asymmetric slotline-based series–parallel combiner (ASSPC) for output power combining. The ASSPC provides both low-loss, wideband combining and efficient admittance matching for four differential cascode PA unit cells, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 16
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3656477
Publisher: IEEE

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A Compact, Wideband Complex Cascode Power Amplifier With LC Neutralization for VSWR-Resilient Operation in High-Density Phased Arrays

A Compact, Wideband Complex Cascode Power Amplifier With LC Neutralization for VSWR-Resilient Operation in High-Density Phased Arrays 150 150
Author(s): Mohamed Eleraky, Tzu-Yuan Huang, Hua Wang

Abstract:

This article proposes a design methodology for achieving intrinsic performance resilience in power amplifiers (PAs) against antenna impedance variations inherent to modern phased-array systems through the improvement of the PA output matching ( $S!_{22}$ ). This goal, however, presents a challenge for conventional cascode PAs due to their inherently high output impedance …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 16
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3654669
Publisher: IEEE

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220 GHz, 8.5-dBm Saturated Output Power Wideband Power Amplifier in SiGe BiCMOS

220 GHz, 8.5-dBm Saturated Output Power Wideband Power Amplifier in SiGe BiCMOS 150 150
Author(s): Xun Chen, Jonas Winkelhake, Muh-Dey Wei, Renato Negra

Abstract:

This letter presents a broadband $G$ -band power amplifier (PA) designed in a 130-nm silicon-germanium (SiGe) bipolar complementary metal-oxide-semiconductor technology. Unlike dual-band matching and staggered tuning techniques to obtain large operation bandwidth (BW), we propose a common broadband amplification stage in this work for its flexibility. In each stage, inductive …

Published in: IEEE Solid-State Circuits Letters
Page(s): 17 – 20
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3646267
Publisher: IEEE

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