Polarization

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Insights into the S-Curve Engineering in Ferroelectric-on-Top Negative-Capacitance CFET for Ultra-Low Power Computing

Insights into the S-Curve Engineering in Ferroelectric-on-Top Negative-Capacitance CFET for Ultra-Low Power Computing 150 150
Author(s): Sandeep Semwal, Pin Su

Abstract:

The growing demand for energy-efficient computing has intensified interest in highly scalable device technologies such as complementary field-effect transistors (CFETs). In this work, we investigate S-curve engineering for a unique ferroelectric-on-top (FE-o-T) negative-capacitance (NC) CFET through calibrated numerical simulations to assess its potential for ultra-low-power computing and supply-voltage scaling. Our …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3740342
Publisher: IEEE

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FeFET-Based CMOS Current Starvation Programmable Delay Element

FeFET-Based CMOS Current Starvation Programmable Delay Element 150 150
Author(s): Albi Mema, Simon Thomann, Hussam Amrouch

Abstract:

Programmable delay elements (PDEs) are crucial circuit building blocks that enable precise timing adjustments of signal transitions. They are used in various critical applications, like time-to-digital converters. They are often used to mitigate aging by clock skew tuning postfabrication. However, typical CMOS PDE designs require many transistors while still offering …

Published in: IEEE Solid-State Circuits Letters
Page(s): 166 – 169
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3692304
Publisher: IEEE

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