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A 3 nm FinFET 125 TOPS/W-29 TFLOPS/W, 90 TOPS/mm2-17 TFLOPS/mm2 SRAM-Based INT8, and FP16 Digital-CIM Compiler With Support for Multi-Weight Update/Cycle

A 3 nm FinFET 125 TOPS/W-29 TFLOPS/W, 90 TOPS/mm2-17 TFLOPS/mm2 SRAM-Based INT8, and FP16 Digital-CIM Compiler With Support for Multi-Weight Update/Cycle 150 150
Author(s): Haruki Mori, Je-Min Hung, Wei-Chang Zhao, Kinshuk Khare, Brian Crafton, Hiroaki Ishii, Cheng-En Lee, Xiaochen Peng, Xiaoyu Sun, Yorinobu Fujino, Chia-Jung Tsen, Vineet Joshi, Chao-Kai Chuang, Takeshi Hashizume, Chia-Fu Lee, Tan-Li Chou, Kerem Akarvardar, Saman Adham, Yih Wang, Hidehiro Fujiwara, Yu-Der Chih, Yen-Huei Chen, Hung-Jen Liao, Tsung-Yung Jonathan Chang

Abstract:

This article presents an static random-access memory (SRAM)-based digital compute-in-memory (CIM) compiler implemented with 3 nm high- $\kappa $ metal gate (HKMG) FinFET technology, supporting flexible INT8 and FP16 formats for weight and activation multiply-accumulate (MAC) operations, offering configuration flexibility, high accuracy, and improved area and power efficiency. The FP16 digital …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3646072
Publisher: IEEE

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Opal: A 16-nm Coarse-Grained Reconfigurable Array SoC for Full Sparse Machine Learning Applications

Opal: A 16-nm Coarse-Grained Reconfigurable Array SoC for Full Sparse Machine Learning Applications 150 150
Author(s): Po-Han Chen, Bo Wun Cheng, Michael Oduoza, Zhouhua Xie, Rupert Lu, Sai Gautham Ravipati, Kalhan Koul, Alex Carsello, Yuchen Mei, Mark Horowitz, Priyanka Raina

Abstract:

Sparsity has recently attracted increased attention in the machine learning (ML) community due to its potential to improve performance and energy efficiency by eliminating ineffectual computations. As ML models evolve rapidly, reconfigurable architectures, such as coarse-grained reconfigurable arrays (CGRAs), are being explored to adapt to and accelerate emerging models. Previous …

Published in: IEEE Solid-State Circuits Letters
Page(s): 293 – 296
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3613245
Publisher: IEEE

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