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An 18.4-Gb/s/pin Simultaneous Bidirectional Transceiver for Post HBM4 Using Four-Phase Hybrid Timing Alignment and Dual Equalization

An 18.4-Gb/s/pin Simultaneous Bidirectional Transceiver for Post HBM4 Using Four-Phase Hybrid Timing Alignment and Dual Equalization 150 150
Author(s): Minchang Kim, Hankyu Chi, Sooncheol Kwon, Icsu Oh, Seulgi Kim, Heewoong Song, Daeho Yun, Jaehong Jeong, Daejoon Kim, Kichul Hong, Jeonghyun Park, Woo-Seok Choi, Hae-Kang Jung, Hoyoung Son, Inchul Jeong, Hyungsoo Kim, Jonghwan Kim

Abstract:

This letter presents a simultaneous bidirectional (SBD) transceiver for post HBM4. It is difficult to increase the data rate due to poor channel characteristics of the silicon interposer and the limited physical area of the IO in high-bandwidth memory (HBM) interface. SBD signaling is attractive because it doubles the per-pin …

Published in: IEEE Solid-State Circuits Letters
Page(s): 182 – 185
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3696268
Publisher: IEEE

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A 77-fJ/bit 8-Gbps Adaptive-Voltage-Compatible Self-Timed Die-to-Die Link for 2.5-D and 3-D Interconnect in 3 nm

A 77-fJ/bit 8-Gbps Adaptive-Voltage-Compatible Self-Timed Die-to-Die Link for 2.5-D and 3-D Interconnect in 3 nm 150 150
Author(s): Brian Zimmer, Stephen G. Tell, C. Thomas Gray

Abstract:

This work presents a self-timed die-to-die link that serializes four data bits per pin for 2.5-D, or 3-D interconnects using a standard adaptive digital clock and voltage supply. The link achieves 8 Gbps of per-pin bandwidth with a latency of one cycle, energy efficiency of 77 fJ/b, and bandwidth density of 44…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 10
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3658215
Publisher: IEEE

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A 28-Gb/mm2 4XX-Layer 1-Tb 3-b/Cell WF-Bonding 3D-nand Flash With 5.6-Gb/s/Pin IOs

A 28-Gb/mm2 4XX-Layer 1-Tb 3-b/Cell WF-Bonding 3D-nand Flash With 5.6-Gb/s/Pin IOs 150 150
Author(s): Sang-Soo Park, Jae-Doeg Lyu, Myungjun Kim, Jaeyun Lee, Youngsun Song, Chung-Ho Yu, Hirano Makoto, Yongseok Kwon, Jong-Hoon Park, Ho-Joon Kim, Daein Lee, Donghyun Seo, Philkyu Kang, Byungrok Go, Minseok Kim, Seoyoon Jeon, Jaehwan Ryu, Jungmin Seo, Hwan-Seok Ku, Youngmin Jo, Doo-Hyun Kim, Hyunjun Yoon, Wontae Kim, Inmo Kim, Sunghoon Kim, Jiho Cho, Moosung Kim, Jae-Woo Im, Jongmin Park, Youngdon Choi, Il-Han Park, Chiweon Yoon, Hyunsuk Kim, Jaehoon Jang, Seungjae Lee, Ki-Whan Song, Sung-Hoi Hur

Abstract:

The challenge of evolving to create a memory that is shrinking compared to the previous generation while satisfying the high performance and low power required for flash memory has been present in every generation, but the recent rapid change to artificial intelligence (AI) trends is very tough, as the level …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 9
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3613774
Publisher: IEEE

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Beyond Backside Power: Backside Signal Routing as Technology Booster for Standard-Cell Scaling

Beyond Backside Power: Backside Signal Routing as Technology Booster for Standard-Cell Scaling 150 150
Author(s): Anup Ashok Kedilaya, Sirish Oruganti, Nishant Gupta, Xiuhao Zhang, Ilya Karpov, Mark A. Anders, Jaydeep P. Kulkarni

Abstract:

Advances in process technology enabling backside metals (BSMs) and contacts offer new design–technology co-optimization (DTCO) opportunities to further enhance power, performance, and area gains (PPA) in sub-3-nm nodes. This work exploits backside (BS) contact technology within standard cells to extend both signal and clock routing to BSM layers, …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 107 – 115
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3617784
Publisher: IEEE

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