Phased arrays

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A 298–334-GHz Scalable Injection-Locked Phased-Array Radiator With Second-Subharmonic-Termination-Assisted Waveform Formulation for Power Enhancement

A 298–334-GHz Scalable Injection-Locked Phased-Array Radiator With Second-Subharmonic-Termination-Assisted Waveform Formulation for Power Enhancement 150 150
Author(s): Meng Yang, Liang Wu

Abstract:

This article introduces an injection-locked $4\times 2$ phased-array radiator featuring scalability in both horizontal and vertical dimensions. The system architecture is constructed by sequentially cascading four identical phase-shifting and frequency-quadrupling (PSFQ) elements in a chain-like configuration and then cohering two such chains, thereby achieving global frequency synchronization. Particularly, phase shifting and …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3624563
Publisher: IEEE

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A 240-GHz Sub-THz Direct-Conversion Transmitter With I/Q Phase Calibration in 40-nm CMOS

A 240-GHz Sub-THz Direct-Conversion Transmitter With I/Q Phase Calibration in 40-nm CMOS 150 150
Author(s): Chun-Sheng Lin, Chih-Hsueh Lin, Chun-Hsing Li

Abstract:

A 240-GHz direct-conversion transmitter (TX), consisting of an LO chain and fundamental I/Q mixers, is proposed for sub-THz communication applications. The LO chain integrates phase-shifter-embedded impedance matching networks (IMNs) and frequency tripler with an optimized harmonic IMN, delivering I/Q LO signals at 240 GHz with high output power, 360° phase …

Published in: IEEE Solid-State Circuits Letters
Page(s): 225 – 228
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3592246
Publisher: IEEE

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Two 7–13-GHz GaAs-SiGe Four–Channel Beamforming Chiplets With/Without Metallic Interlayer Shields

Two 7–13-GHz GaAs-SiGe Four–Channel Beamforming Chiplets With/Without Metallic Interlayer Shields 150 150
Author(s): Nengxu Zhu, Yiting Zhang, Genyin Ma, Fanyi Meng

Abstract:

This letter presents two 7–13-GHz GaAs-SiGe four-channel beamforming chiplets to minimize the chip area. The chips integrate GaAs-based power amplifiers (PAs) and low-noise amplifiers (LNAs) with silicon-based phase and amplitude control modules using gold bumps. To mitigate coupling between the metal patterns of the heterogeneous chips and avoid interference with …

Published in: IEEE Solid-State Circuits Letters
Page(s): 161 – 164
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3573757
Publisher: IEEE

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