Phase shifters

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A 436–472 GHz 4-Element IF Beamforming Phased-Array Receiver in 65-nm CMOS

A 436–472 GHz 4-Element IF Beamforming Phased-Array Receiver in 65-nm CMOS 150 150
Author(s): Hao Guo, Hao-Tao Hu, Zhicheng Lin, Zijun Guo, Xiaoyue Xia, Kaizhe Guo, Kam Man Shum, Pui-In Mak, Chi Hou Chan

Abstract:

This article presents a 436–472GHz four-element intermediate-frequency (IF) beamforming phased-array receiver fabricated in 65-nm CMOS, targeting scalable terahertz (THz) phased-array systems. The proposed receiver adopts a two-step mixing scheme to reduce the area overhead of the IF beamforming implementation, thereby enhancing the array scalability at THz frequencies. Each receive channel …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3710258
Publisher: IEEE

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An Inductive-Load-Modulated Multiband Phase Shifter With <0.38°/0.12-dB RMS Errors

An Inductive-Load-Modulated Multiband Phase Shifter With <0.38°/0.12-dB RMS Errors 150 150
Author(s): Xinyi Wu, Chenxu Zhao, Hui Chen, Xun Bao, Yaolong Hu, Aoyang Zhang, Leibo Liu

Abstract:

This letter presents a compact, multiband reflection-type phase shifter (RTPS) implemented in 65-nm CMOS that overcomes the narrowband limitations of conventional passive loads. The proposed design utilizes an inductive-load modulation. By injecting a secondary signal to actively manipulate the magnetic flux, the equivalent inductance is boosted to enable operation across …

Published in: IEEE Solid-State Circuits Letters
Page(s): 170 – 173
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3694867
Publisher: IEEE

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A W-Band Active Bidirectional Phase Shifter With 2° RMS Phase Error Over 26.4% FBW Using Back-Gate Biasing in 28-nm FD-SOI CMOS

A W-Band Active Bidirectional Phase Shifter With 2° RMS Phase Error Over 26.4% FBW Using Back-Gate Biasing in 28-nm FD-SOI CMOS 150 150
Author(s): Sungwon Kwon, Byung-Wook Min

Abstract:

This article presents a W-band active bidirectional vector-sum phase shifter (Bi-VSPS) using a bidirectional phase-inverting variable-gain amplifier (Bi-PIVGA) with back-gate biasing in 28-nm fully depleted silicon-on-insulator (FD-SOI) CMOS. The Bi-PIVGA employs a neutralization technique that cancels the gate-to-drain capacitances of both active and inactive transistors in each signal direction. By …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3699765
Publisher: IEEE

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A 142–164-GHz Phased-Array AiP Module With High-Power-Density and High-Efficiency Transceiver in 65-nm CMOS for 6G UE

A 142–164-GHz Phased-Array AiP Module With High-Power-Density and High-Efficiency Transceiver in 65-nm CMOS for 6G UE 150 150
Author(s): Yudai Yamazaki, Yohei Morishita, Sunghwan Park, Takaya Uchino, Chenxin Liu, Jun Sakamaki, Akihiro Egami, Ryosuke Hasaba, Ken Takahashi, Tomoki Abe, Tomohiro Murata, Yoichi Nakagawa, Takashi Tomura, Hiroshi Taneda, Kei Murayama, Makoto Tsukahara, Hiroko Ota, Yoko Nakabayashi, Ryuji Kinugawa, Takumi Kojima, Anyi Tian, Kotaro Ito, Chun Wang, Hans Herdian, Yi Zhang, Zheng Li, Wenqian Wang, Hongye Huang, Dingxin Xu, Sena Kato, Michihiro Ide, Shinsuke Hara, Issei Watanabe, Akifumi Kasamatsu, Yuncheng Zhang, Hiroyuki Sakai, Kazuaki Kunihiro, Atsushi Shirane, Koji Takinami, Kenichi Okada

Abstract:

This work presents a D-band high-power-density four-element phased-array transceiver for 6G user equipment (UE). Conventional designs require large multi-stage LO generation circuits for D-band up/down conversion, making it difficult to achieve compact size and low-power consumption. To address this, we propose an integrated LO chain using an injection-locked tripling …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1275 – 1293
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3665184
Publisher: IEEE

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A Wideband Calibration-Free D-Band Passive Phase Shifter With Frequency-Invariant Codes Over 24% Fractional Bandwidth

A Wideband Calibration-Free D-Band Passive Phase Shifter With Frequency-Invariant Codes Over 24% Fractional Bandwidth 150 150
Author(s): Basem Abdelaziz Abdelmagid, Yuqi Liu, Hua Wang

Abstract:

This work presents a compact 110–140 GHz bidirectional D-band passive phase shifter based on combining a 5-stage capacitively-loaded reflective-type PS (RTPS) with a wideband 0°/180° stage. The design achieves a 360° phase range with a resolution of 11.25°. By applying: 1) a wideband RTPS design methodology on the stage level; 2) frequency/switching-staggering techniques among the …

Published in: IEEE Solid-State Circuits Letters
Page(s): 329 – 332
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3622233
Publisher: IEEE

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