Optical receiver

  • No Comments

A 50-Gb/s Baud-Rate Burst-Mode Receiver Using a Phase Uncertainty Reduction Scheme Achieving 8-ns Phase Locking for 50G-PON in 28-nm CMOS

A 50-Gb/s Baud-Rate Burst-Mode Receiver Using a Phase Uncertainty Reduction Scheme Achieving 8-ns Phase Locking for 50G-PON in 28-nm CMOS 150 150
Author(s): Pingyi Cai, Xiongshi Luo, Ruixian Zhang, Kun Zhang, Wenhan Guan, Jiayao Li, Wenkang Luo, Yangyi Zhang, Quan Pan

Abstract:

This article presents a 50-Gb/s baud-rate burst-mode receiver (BMRX) for 50G-PON. A phase uncertainty reduction (PUR) scheme is proposed to narrow the maximum phase search range from 1 unit interval (UI) to 0.5 UI, thereby reducing the phase locking overhead while preserving low power consumption. To maintain robust burst acquisition across …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3728469
Publisher: IEEE

View on IEEE Xplore

  • No Comments

Dual-Junction Monolithically Integrated Monitoring Photodiode With a Two-Stage 18 GHz 18 pA/√Hz TIA in 22-nm FDSOI

Dual-Junction Monolithically Integrated Monitoring Photodiode With a Two-Stage 18 GHz 18 pA/√Hz TIA in 22-nm FDSOI 150 150
Author(s): Jelle H. T. Bakker, Nimit Jain, Paul Klatser, Mark S. Oude Alink, Bram Nauta

Abstract:

We present a monolithically integrated (MI) dualjunction monitoring photodiode (PD) and transimpedance amplifier (TIA). The photocurrent originates from the deep Nwell (DNW)/P-type substrate (PSUB) $({\lt }5~ \mathrm {GHz})$ and the P-Well $(\mathrm {PW}) / \mathrm {DNW}({\gt }1~ \mathrm {GHz})$ junctions. The presented combination of bulk PD and 22 nm fully-depleted silicon-on-insulator (FDSOI) …

Published in: IEEE Solid-State Circuits Letters
Page(s): 313 – 316
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3615656
Publisher: IEEE

View on IEEE Xplore

Search this website